公开(公告)号：US20070184655A1

公开(公告)日：2007-08-09

申请号：US11671813

申请日：2007-02-06

Applicant: Arthur Learn ,  Steven Sherman ,  Robert Geffken ,  John Hautala

Inventor： Arthur Learn ,  Steven Sherman ,  Robert Geffken ,  John Hautala

IPC: H01L21/44

CPC classification number: H01L21/32136 ,  C23C14/0605 ,  C23C14/0635 ,  C23C14/0652 ,  C23C14/221 ,  C23C16/26 ,  C23C16/325 ,  C23C16/345 ,  C23C16/513 ,  H01J2237/0812 ,  H01L21/02074 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/321 ,  H01L21/67207 ,  H01L21/76801 ,  H01L21/76822 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods and apparatus for forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided. Various cluster tool configurations including gas-cluster ion-beam processing modules for copper capping, cleaning, etching, and film formation steps are disclosed.

Abstract translation: 在用于集成电路的互连结构中的铜互连布线层的表面上的覆盖层或层，以及通过应用气体簇离子束处理形成用于集成电路的改进的集成互连结构的方法和装置。 减少铜扩散和改善电迁移寿命，避免使用选择性金属封盖技术及其伴随产量问题。 公开了包括用于铜封盖，清洗，蚀刻和成膜步骤的气体簇离子束处理模块的各种簇工具配置。

公开(公告)号：US20060108912A1

公开(公告)日：2006-05-25

申请号：US11326266

申请日：2005-12-30

Applicant: Bob Mackey ,  Duane Haven ,  Arthur Learn ,  John Porter ,  Theodore Fahlen ,  Shiyou Pei ,  William Cummings

Inventor： Bob Mackey ,  Duane Haven ,  Arthur Learn ,  John Porter ,  Theodore Fahlen ,  Shiyou Pei ,  William Cummings

IPC: H01J1/62

CPC classification number: H01J29/94 ,  H01J1/304 ,  H01J29/06 ,  H01J29/085 ,  H01J2201/02 ,  H01J2329/00 ,  H01J2329/863 ,  H01J2329/8645 ,  H01J2329/8665

Abstract: A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing wells disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing wells disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing wells.

Abstract translation: 在一个实施例中公开了场致发射显示装置的受保护的面板结构。 具体地说，在一个实施例中，本发明叙述了场致发射显示装置的面板，其中场致发射显示装置的面板适于在其一侧上设置含荧光体的孔。 本实施例还包括设置在所述面板的一侧上的阻挡层，其适于具有设置在其上的荧光体含有孔。 本实施例的阻挡层适于防止面板的劣化。 具体地说，本实施例的阻挡层适于防止由于电子被引向含荧光体孔的电子轰击导致面板的劣化。

公开(公告)号：US20070184656A1

公开(公告)日：2007-08-09

申请号：US11671860

申请日：2007-02-06

Applicant: Steven Sherman ,  Arthur Learn ,  Robert Geffken ,  John Hautala

Inventor： Steven Sherman ,  Arthur Learn ,  Robert Geffken ,  John Hautala

IPC: H01L21/44

CPC classification number: H01L21/32136 ,  C23C14/0605 ,  C23C14/0635 ,  C23C14/0652 ,  C23C14/221 ,  C23C16/26 ,  C23C16/325 ,  C23C16/345 ,  C23C16/513 ,  H01J2237/0812 ,  H01L21/02074 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/321 ,  H01L21/67207 ,  H01L21/76801 ,  H01L21/76822 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886

Abstract: A wafer processing cluster tool and method of operation provides one or more gas cluster ion beam processing chambers in possible combination with a deposition chamber and/or a cleaning chamber for performing sequential processing steps including, GCIB processing in a reduced pressure atmosphere.

Abstract translation: 晶片处理集群工具和操作方法提供与沉积室和/或清洁室可能组合的一个或多个气体簇离子束处理室，用于执行包括在减压气氛中的GCIB处理的顺序处理步骤。

公开(公告)号：US20060105570A1

公开(公告)日：2006-05-18

申请号：US11269382

申请日：2005-11-08

Applicant: John Hautala ,  Steven Sherman ,  Arthur Learn ,  Robert Geffken

Inventor： John Hautala ,  Steven Sherman ,  Arthur Learn ,  Robert Geffken

IPC: H01L21/44

CPC classification number: H01L21/76867 ,  C23C14/0605 ,  C23C14/0635 ,  C23C14/0652 ,  C23C14/221 ,  C23C16/26 ,  C23C16/325 ,  C23C16/345 ,  C23C16/513 ,  H01J2237/0812 ,  H01L21/02074 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/321 ,  H01L21/32136 ,  H01L21/76822 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76883 ,  H01L21/76886 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.

Abstract translation: 在用于集成电路的互连结构中用于铜互连布线层的表面上的覆盖层或层，以及通过应用气体簇离子束处理形成用于集成电路的改进的集成互连结构的方法。 减少铜扩散和改善电迁移寿命，避免使用选择性金属封盖技术及其伴随产量问题。