公开(公告)号：US20250093660A1

公开(公告)日：2025-03-20

申请号：US18885214

申请日：2024-09-13

Applicant: Applied Materials, Inc.

Inventor： Simon LORENZO ,  David Alexander SELL

IPC: G02B27/01 ,  G02B6/34 ,  G02B6/42

Abstract: Embodiments of the present disclosure relate to devices and methods related to relate to augmented reality waveguide combiners. The device includes a waveguide combiner, the waveguide combiner includes an input coupler operable to receive a light and in-couple the light into the waveguide combiner, an exit pupil expander (EPE) adjacent to a grating of the input coupler, the EPE having a laddered structure, the laddered structure comprising at least one band, the at least one band comprising a plurality of grating structures, at least one grating structure of the plurality of grating structures has a varying depth, a varying duty cycle, or a varying pitch that is different than a depth, a duty cycle, or pitch than an adjacent grating structure of the plurality of grating structures, and an output coupler operable to receive the light from the EPE and transmit the light onto a user field of view (FOV).

公开(公告)号：US20250093300A1

公开(公告)日：2025-03-20

申请号：US18885019

申请日：2024-09-13

Applicant: Applied Materials, Inc.

Inventor： Jia Pelpa ,  Mehran Moalem ,  Manuel A. Hernandez ,  Ryan Pakulski

IPC: G01N29/02 ,  G01N29/036 ,  G01N29/24 ,  H01L21/67

Abstract: A system can include a chamber body of a processing chamber, a substrate support assembly disposed within the chamber body and associated with a processing region, a radical sensor disposed within the processing chamber, and a controller. The radical sensor is to measure a change in resonant frequency of a radical sensor of the radical sensor, and the change in resonant frequency of the radical sensor correlates to a concentration of radical species associated with a target gas. The controller is to determine one or more conditions of the processing chamber based on the change in the resonant frequency of the radical sensor.

公开(公告)号：US12255067B2

公开(公告)日：2025-03-18

申请号：US17751609

申请日：2022-05-23

Applicant: Applied Materials, Inc.

Inventor： John Hautala ,  Charith Nanayakkara

IPC: H01L21/00 ,  H01L21/033

Abstract: Disclosed are approaches for forming semiconductor device layers. One method may include forming a plurality of openings in a semiconductor structure, and forming a film layer atop the semiconductor structure by delivering a material at a non-zero angle relative to a normal extending perpendicular from an upper surface of the semiconductor structure. The film layer may be formed along the upper surface of the semiconductor structure without being formed along a sidewall of each opening of the plurality of openings, wherein an opening though the film layer remains above each opening of the plurality of openings.

公开(公告)号：US12255054B2

公开(公告)日：2025-03-18

申请号：US17127201

申请日：2020-12-18

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Manjunath Veerappa Chobari Patil ,  Nitin Pathak ,  Yi Yang ,  Badri N. Ramamurthi ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/458 ,  C23C16/50

Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

公开(公告)号：US12255051B2

公开(公告)日：2025-03-18

申请号：US17983926

申请日：2022-11-09

Applicant: Applied Materials, Inc.

Inventor： Linying Cui ,  James Rogers ,  Daniel Sang Byun ,  Rajinder Dhindsa ,  Keith Hernandez

IPC: H01J37/32

Abstract: Embodiments of the disclosure provided herein include a method for processing a substrate in a plasma processing system. The method includes receiving a first synchronization waveform signal from a controller, delivering a first burst of first voltage pulses to an electrode assembly after receiving a first portion of the first synchronization waveform signal, wherein at least one first parameter of the first voltage pulses is set to a first value based on a first waveform parameter within the first portion of the first synchronization waveform signal, and delivering a second burst of second voltage pulses to the electrode assembly after receiving a second portion of the first synchronization waveform signal, wherein the at least one first parameter of the first voltage pulses is set to a second value based on a difference in the first waveform parameter within the second portion of the first synchronization waveform signal.

公开(公告)号：US12251787B2

公开(公告)日：2025-03-18

申请号：US17979850

申请日：2022-11-03

Applicant: Applied Materials, Inc.

Inventor： Steven M. Zuniga ,  Jay Gurusamy

IPC: B24B37/10 ,  B24B37/20 ,  B24B41/02 ,  B24B47/02 ,  B24B53/017

Abstract: The present disclosure is directed towards polishing modules for performing chemical mechanical polishing of a substrate. The substrate may be a semiconductor substrate. The polishing modules described have a plurality of pads, such as polishing pads, disposed within a single polishing station. The pads are configured to remain stationary during processing, such as during polishing or buff operations. Either an x-y gantry assembly or a head actuation assembly is coupled to a system body of a polishing module and is configured to move a carrier head over the pads. Between process operations the polishing pads may be indexed to expose a new polishing pad to the carrier head.

公开(公告)号：US20250087477A1

公开(公告)日：2025-03-13

申请号：US18367136

申请日：2023-09-12

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Kenneth S. Collins ,  Hanhong Chen ,  Philip A. Kraus ,  Michael Rice

IPC: H01L21/02

Abstract: Methods of depositing improved quality silicon nitride (SixNy) films are disclosed. Exemplary methods include exposing a semiconductor substrate in a semiconductor processing chamber to a silicon-containing precursor, to a first plasma produced from a first gas mixture comprising helium (He) and nitrogen (N2), the first gas mixture comprising a ratio of helium:nitrogen in a range of from 20:1 to 1000:1, and exposing the semiconductor substrate to a second plasma produced from a second gas mixture comprising helium (He), nitrogen (N2), and ammonia (NH3).

公开(公告)号：US20250084528A1

公开(公告)日：2025-03-13

申请号：US18244197

申请日：2023-09-08

Applicant: Applied Materials, Inc.

Inventor： Arvinder ManmohanSingh Chadha

IPC: C23C14/54 ,  F28F27/00

Abstract: A method includes: identifying property data associated with a substrate support system; identifying target performance data associated with the substrate support system; and causing, based on the property data and the target performance data, heat transfer management of the substrate support system.

公开(公告)号：US12249525B1

公开(公告)日：2025-03-11

申请号：US18680896

申请日：2024-05-31

Applicant: Applied Materials, Inc.

Inventor： Ian McDonald ,  Prashant Aji ,  Chengqing Wang ,  Shifang Li ,  Xinyuan Chong

IPC: H01L21/67 ,  H01L21/66

Abstract: Systems, methods, and computer-readable mediums for monitoring temperature of a substrate are described. Spectroscopic measurements are performed on a surface of the substrate using a metrology tool integrated with a processing tool. The measurements may be used to determine that the substrate has cooled below a threshold temperature using the spectroscopic measurements.

公开(公告)号：US12249489B2

公开(公告)日：2025-03-11

申请号：US18131997

申请日：2023-04-07

Applicant: Applied Materials, Inc.

Inventor： Yue Chen ,  Jinyu Lu ,  Yongmei Chen ,  Jinxin Fu ,  Zihao Yang ,  Mingwei Zhu ,  Takashi Kuratomi ,  Rami Hourani ,  Ludovic Godet ,  Qun Jing ,  Jingyi Yang ,  David Masayuki Ishikawa

IPC: H01J37/32 ,  H01J7/02

Abstract: A method of processing an optical device is provided, including: positioning an optical device on a substrate support in an interior volume of a process chamber, the optical device including an optical device substrate and a plurality of optical device structures formed over the optical device substrate, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide. The method further includes providing one or more process gases to the interior volume of the process chamber, and generating a plasma of the one or more process gases in the interior volume for a first time period when the optical device is on the substrate support, and stopping the plasma after the first time period. A carbon content of the one or more surface regions of each optical device structure is reduced by at least 50% by the plasma.