公开(公告)号：US11309177B2

公开(公告)日：2022-04-19

申请号：US16182050

申请日：2018-11-06

申请人： STMICROELECTRONICS S.r.l.

发明人： Ruggero Anzalone ,  Nicolo′ Frazzetto

IPC分类号： H01L21/02 ,  H01L29/16 ,  H01L21/683 ,  C23C16/01 ,  C23C16/32

摘要： Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support.

公开(公告)号：US11299821B2

公开(公告)日：2022-04-12

申请号：US16781261

申请日：2020-02-04

申请人： NuFlare Technology, Inc.

发明人： Yoshiaki Daigo ,  Akio Ishiguro ,  Hideki Ito

IPC分类号： H01L21/44 ,  C30B25/12 ,  C23C16/32 ,  C23C16/458 ,  C23C16/46 ,  C23C28/04 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36 ,  C30B29/68 ,  H01L21/02 ,  H01L29/16 ,  H01L29/167 ,  C30B25/16 ,  C23C16/455

摘要： A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holder having a holding wall capable holding an outer periphery of the substrate; a process gas supply part provided above the reaction chamber, the process gas supply part having a first region supplying a first process gas and a second region around the first region supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall provided between the process gas supply part and the substrate holder, an inner peripheral diameter of the sidewall being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater; a second heater; and a rotation driver.

公开(公告)号：US20220084815A1

公开(公告)日：2022-03-17

申请号：US17021035

申请日：2020-09-15

申请人： Applied Materials, Inc.

发明人： Bo Xie ,  Ruitong Xiong ,  Sure Ngo ,  Kang Sub Yim ,  Yijun Liu ,  Li-Qun Xia

IPC分类号： H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/40 ,  C23C16/32

摘要： Embodiments of the semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (κ value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.

公开(公告)号：US20220081765A1

公开(公告)日：2022-03-17

申请号：US17020256

申请日：2020-09-14

申请人： Applied Materials, Inc.

发明人： Bo Xie ,  Ruitong Xiong ,  Kang Sub Yim ,  Yijun Liu ,  Li-Qun Xia ,  Sure Ngo

IPC分类号： C23C16/44 ,  H01L21/02 ,  H01J37/32 ,  B08B7/00 ,  C23C16/40 ,  C23C16/32 ,  C23C16/50

摘要： Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF3 plasma effluents, and greater than or about 1000 sccm of O2 plasma effluents.

公开(公告)号：US20220076988A1

公开(公告)日：2022-03-10

申请号：US17191786

申请日：2021-03-04

申请人： Applied Materials, Inc.

发明人： Hui CHEN ,  Xinning LUAN ,  Kirk Allen FISHER ,  Shawn Joseph BONHAM ,  Aimee S. ERHARDT ,  Zhepeng CONG ,  Shaofeng CHEN ,  Schubert S. CHU ,  James M. AMOS ,  Philip Michael AMOS ,  John NEWMAN

IPC分类号： H01L21/687 ,  C23C16/458 ,  C23C16/32

摘要： A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a front side and a back side opposite the front side, and a coating layer deposited on the susceptor substrate. The front side has a pocket configured to hold a wafer to be processed in a processing chamber, the pocket being textured with a first pattern. The back side is textured with a second pattern.

公开(公告)号：US11253927B2

公开(公告)日：2022-02-22

申请号：US16741395

申请日：2020-01-13

申请人： TUNGALOY CORPORATION

发明人： Kinya Takahashi ,  Naoyuki Fukushima

IPC分类号： B23B27/14 ,  C23C16/30 ,  C23C16/36 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40

摘要： A coated cutting tool comprising a substrate and a coating layer formed on a surface of the substrate, wherein: the coating layer comprises a lower layer, an intermediate layer, and an upper layer in this order from the substrate side; the lower layer comprises one or two or more Ti compound layers containing a Ti compound of Ti and an element of at least one kind selected from the group consisting of C, N, O and B, the intermediate layer comprises an α-Al2O3 layer containing α-Al2O3, and the upper layer comprises a TiCNO layer containing TiCNO; an average thickness of the coating layer is 5.0 μm or more and 30.0 μm or less; in a specific first cross section, a misorientation A satisfies a specific condition; and in a specific second cross section, a misorientation B satisfies a specific condition.

公开(公告)号：US11230762B2

公开(公告)日：2022-01-25

申请号：US16615703

申请日：2019-09-27

申请人： ADMAP INC.

发明人： Masaki Nakamura

IPC分类号： C23C16/32 ,  C23C16/44 ,  H01J37/32

摘要： A method of easily reproducing a film structure with low cost and a reproduction film structure manufactured using the same, the film structure reproduction method includes: a new film layer deposition step of depositing a new SiC layer on a non-active surface opposite to a damaged active surface; and an active surface fabrication step of fabricating the active surface to obtain a focus ring.

公开(公告)号：US20210391185A1

公开(公告)日：2021-12-16

申请号：US17459070

申请日：2021-08-27

申请人： Beijing E-Town Semiconductor Technology, Co., LTD ,  Mattson Technology, Inc.

发明人： Qi Zhang ,  Xinliang Lu ,  Hua Chung

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C23C16/32 ,  C23C16/56

摘要： Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.

公开(公告)号：US20210355603A1

公开(公告)日：2021-11-18

申请号：US16479551

申请日：2019-05-22

申请人： DS TECHNO CO., LTD.

发明人： Hak Jun AHN ,  Young Ju KIM ,  Youn Woong JUNG ,  Kang Suk KIM ,  Jun Baek SONG ,  Won Geun SON

IPC分类号： C30B29/36 ,  C23C16/32 ,  C30B25/02 ,  H01L21/02

摘要： In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases. The SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×1018 atoms/cm3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.

公开(公告)号：US20210355582A1

公开(公告)日：2021-11-18

申请号：US17318238

申请日：2021-05-12

申请人： Samsung Electronics Co., Ltd.

发明人： Hyeonjin SHIN ,  Sangwon KIM ,  Kyung-Eun BYUN ,  Eunkyu LEE ,  Changhyun KIM ,  Changseok LEE

IPC分类号： C23C16/50 ,  C23C16/26 ,  C23C16/32 ,  C01B32/182 ,  C01B21/064 ,  C01B25/00

摘要： Provided are a conductive structure and a method of controlling a work function of metal. The conductive structure includes a conductive material layer including metal and a work function control layer for controlling a work function of the conductive structure by being bonded to the conductive material layer. The work function control layer includes a two-dimensional material with a defect.