公开(公告)号：US11597655B2

公开(公告)日：2023-03-07

申请号：US16611505

申请日：2019-04-24

申请人： ADMAP INC.

发明人： Zhida Wang

IPC分类号： C01B32/956 ,  H01L21/683

摘要： A technology for securing favorable appearance of a SiC member, the SiC member includes: a first SiC layer having a first upper surface having a concavo-convex shape and a first lower surface; and a second SiC layer having a second upper surface and a second lower surface, the second lower surface being in contact with the first upper surface and having a concavo-convex shape corresponding to that of the first upper surface. The second SiC layer has a recess concaved from the second upper surface toward the second lower surface side and a flat bottom surface, and the bottom surface of the recess is placed upward of the second lower surface.

公开(公告)号：US11453620B2

公开(公告)日：2022-09-27

申请号：US16494195

申请日：2019-03-28

申请人： ADMAP INC.

发明人： Shimpei Chida

IPC分类号： B32B9/00 ,  C04B41/50 ,  H01L21/02 ,  H01J37/32

摘要： A SiC coat having an outer surface including a back face, a front face opposite to the back face, a first side face extending in a direction from the back face toward the front face, and a first R-surface between the back face and the first side face, the SiC coat including: an overcoat configured to include a first upper layer side-face portion that forms the first side face and the first R-surface of the outer surface; and an undercoat configured to include a backface portion that forms the back face of the outer surface and a first lower layer side-face portion covered by the first upper layer side-face portion of the overcoat, wherein the first upper layer side-face portion and the backface portion form a first interface, and the first interface appears on the first R-surface of the outer surface.

公开(公告)号：US20200231448A1

公开(公告)日：2020-07-23

申请号：US16611505

申请日：2019-04-24

申请人： ADMAP INC.

发明人： Zhida WANG

IPC分类号： C01B32/956 ,  H01L21/683

摘要： A technology for securing favorable appearance of a SiC member, the SiC member includes: a first SiC layer having a first upper surface having a concavo-convex shape and a first lower surface; and a second SiC layer having a second upper surface and a second lower surface, the second lower surface being in contact with the first upper surface and having a concavo-convex shape corresponding to that of the first upper surface. The second SiC layer has a recess concaved from the second upper surface toward the second lower surface side and a flat bottom surface, and the bottom surface of the recess is placed upward of the second lower surface.

公开(公告)号：US20210025054A1

公开(公告)日：2021-01-28

申请号：US16615703

申请日：2019-09-27

申请人： ADMAP INC.

发明人： Masaki NAKAMURA

IPC分类号： C23C16/44 ,  H01J37/32 ,  C23C16/32

摘要： A method of easily reproducing a film structure with low cost and a reproduction film structure manufactured using the same, the film structure reproduction method includes: a new film layer deposition step of depositing a new SiC layer on a non-active surface opposite to a damaged active surface; and an active surface fabrication step of fabricating the active surface to obtain a focus ring.

公开(公告)号：US20210005491A1

公开(公告)日：2021-01-07

申请号：US16498249

申请日：2019-08-28

申请人： ADMAP INC.

发明人： Satoshi KAWAMOTO

IPC分类号： H01L21/673 ,  C23C16/32 ,  C23C16/01

摘要： A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

公开(公告)号：US11508570B2

公开(公告)日：2022-11-22

申请号：US16498249

申请日：2019-08-28

申请人： ADMAP INC.

发明人： Satoshi Kawamoto

IPC分类号： B32B9/00 ,  H01L21/02 ,  H01L21/50 ,  C23C16/01 ,  C23C16/32 ,  H01L21/673

摘要： A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

公开(公告)号：US11049747B2

公开(公告)日：2021-06-29

申请号：US16498209

申请日：2019-08-28

申请人： ADMAP INC.

发明人： Satoshi Kawamoto

IPC分类号： H01L21/67 ,  H01L21/673 ,  B28B1/30 ,  C23C16/32

摘要： A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.

公开(公告)号：US20200279732A1

公开(公告)日：2020-09-03

申请号：US16664013

申请日：2019-10-25

申请人： ADMAP INC.

发明人： Satoshi KAWAMOTO

IPC分类号： H01L21/02 ,  H01L21/50

摘要： A SiC film structure capable of providing a sealing structure. A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; and a lid configured to cover the opening.

公开(公告)号：US11380445B2

公开(公告)日：2022-07-05

申请号：US16660589

申请日：2019-10-22

申请人： ADMAP Inc.

发明人： Fumitomo Kawahara

IPC分类号： G21C3/07 ,  B32B1/08 ,  F16L9/04 ,  B32B5/02 ,  C04B35/565 ,  B32B3/30 ,  B32B5/12 ,  B32B18/00 ,  C04B41/87

摘要： A first SiC layer formed into a tubular shape and made of a SiC material, a first groove which spirals in one direction along the outer periphery of the first SiC layer, a first SiC fiber layer made of a plurality of SiC fibers wound along the first groove, a second SiC fiber layer made of a plurality of SiC fibers wound outside of the first SiC fiber layer in a direction different from the one direction, and a second SiC layer which is made of a SiC material and which covers the first SiC layer, the first SiC fiber layer, and the second SiC fiber layer are provided. The first SiC fiber layer and the second SiC fiber layer are separated from each other at intersections of the first SiC fiber layer and the second SiC fiber layer.

公开(公告)号：US11230762B2

公开(公告)日：2022-01-25

申请号：US16615703

申请日：2019-09-27

申请人： ADMAP INC.

发明人： Masaki Nakamura

IPC分类号： C23C16/32 ,  C23C16/44 ,  H01J37/32

摘要： A method of easily reproducing a film structure with low cost and a reproduction film structure manufactured using the same, the film structure reproduction method includes: a new film layer deposition step of depositing a new SiC layer on a non-active surface opposite to a damaged active surface; and an active surface fabrication step of fabricating the active surface to obtain a focus ring.