- 专利标题： SiC FILM STRUCTURE
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申请号： US16498249申请日： 2019-08-28
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公开(公告)号： US20210005491A1公开(公告)日： 2021-01-07
- 发明人: Satoshi KAWAMOTO
- 申请人： ADMAP INC.
- 申请人地址： JP Tamano-shi, Okayama
- 专利权人： ADMAP INC.
- 当前专利权人： ADMAP INC.
- 当前专利权人地址： JP Tamano-shi, Okayama
- 优先权： JP2019-036720 20190228
- 国际申请： PCT/JP2019/033684 WO 20190828
- 主分类号： H01L21/673
- IPC分类号： H01L21/673 ; C23C16/32 ; C23C16/01
摘要：
A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.
公开/授权文献
- US11508570B2 SiC film structure 公开/授权日：2022-11-22
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