知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

109 条记录 (耗时 0.178 秒)

    Anti-cancer compositions and methods
    63.
    发明授权
    Anti-cancer compositions and methods 有权
    抗癌成分和方法

    公开(公告)号：US08772274B1

    公开(公告)日：2014-07-08

    申请号：US13659501

    申请日：2012-10-24

    申请人： The Penn State Research Foundation

    发明人： Gavin P. Robertson ,  Subbarao V. Madhunapantula ,  Shantu Amin ,  Dhimant Desai

    IPC分类号： A01N43/00 ,  A61K31/33 ,  A01N31/00 ,  A61K31/095 ,  C07C391/00 ,  C07C395/00 ,  A61K31/155 ,  A61K8/23

    CPC分类号： C07C391/00 ,  A61K8/23 ,  A61K31/095 ,  A61K31/155 ,  A61K31/33

    摘要： Anti-cancer compositions and methods are described including one or more compounds having the structural formula I: R2-R—R1, where R is phenyl, where R1 is (CH2)n—Se—C(═NH)—NH2, where R2 is (CH2)n—Se—C(═NH)—NH2 or R2 is H, and where each n is independently 2, 3, 4, 5, 6, 7, or 8. Methods of treating a subject are provided according to embodiments of the present invention which include administering a therapeutically effective amount of a composition including one or more compounds having the structural formula I to a subject having a condition characterized by Akt dysregulation. Administering a therapeutically effective amount of a composition including one or more compounds having the structural formula I to a subject detectably increases apoptosis and/or decreases proliferation of cancer cells, particularly cancer cells characterized by Akt dysregulation. Compositions of the present invention inhibit Akt enzymes, iNOS, and increase MAP kinase activity such that cancer cells contacted with the compositions are inhibited.

    摘要翻译： 描述了抗癌组合物和方法，其包括一种或多种具有结构式I的化合物：其中R是苯基，其中R1是（CH2）n-Se-C（= NHN）-NH2，其中R2 是（CH2）n-Se-C（= NH）-NH2或R2是H，并且其中每个n独立地是2,3,4,5,6,7或8.治疗受试者的方法根据 本发明的实施方案包括将具有结构式I的治疗有效量的包含一种或多种具有结构式I的化合物的组合物施用于具有由Akt调节异常表征的病症的受试者。 向受试者施用治疗有效量的包含一种或多种具有结构式I的化合物的组合物可检测地增加癌细胞，特别是Akt失调特征的癌细胞的凋亡和/或降低增殖。 本发明的组合物抑制Akt酶，iNOS，并且增加MAP激酶活性，使得与组合物接触的癌细胞被抑制。

    Methods Of Forming A Tellurium Alkoxide And Methods Of Forming A Mixed Halide-Alkoxide Of Tellurium
    64.
    发明申请
    Methods Of Forming A Tellurium Alkoxide And Methods Of Forming A Mixed Halide-Alkoxide Of Tellurium 有权
    形成碲化铋的方法和形成碲的混合卤化物 - 醇的方法

    公开(公告)号：US20120184781A1

    公开(公告)日：2012-07-19

    申请号：US13430959

    申请日：2012-03-27

    申请人： Stefan Uhlenbrock

    发明人： Stefan Uhlenbrock

    IPC分类号： C07C395/00

    CPC分类号： C07C395/00

    摘要： A method of forming a tellurium alkoxide includes providing a tellurium halide and a non-tellurium alkoxide in a liquid organic solvent. The liquid organic solvent has less moles of alcohol, if any, than moles of tellurium halide in the liquid organic solvent. The tellurium halide and the non-tellurium alkoxide within the liquid organic solvent are reacted to form a reaction product halide and a tellurium alkoxide. The liquid organic solvent is removed from the reaction product halide and the tellurium alkoxide to leave a liquid and/or solid mixture comprising the reaction product halide and the tellurium alkoxide. The mixture is heated effective to gasify the tellurium alkoxide from the reaction product halide. Other implementations are disclosed, including methods of forming a mixed halide-alkoxide of tellurium.

    摘要翻译： 形成碲醇盐的方法包括在液体有机溶剂中提供卤化碲和非碲醇盐。 液体有机溶剂在液体有机溶剂中的摩尔数小于卤化铱的摩尔数（如果有的话）。 使液体有机溶剂中的卤化碲和非碲醇盐反应形成反应产物卤化物和碲化铋。 将液体有机溶剂从反应产物卤化物和碲醇盐中除去以留下包含反应产物卤化物和碲化铋的液体和/或固体混合物。 加热混合物有效地从反应产物卤化物中气化碲醇矾盐。 公开了其它实施方案，包括形成碲的混合卤化物 - 醇盐的方法。

    Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device
    66.
    发明授权
    Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device 有权
    前体，薄层制备包括前体，制备薄层的方法和相变存储器件

    公开(公告)号：US07371429B2

    公开(公告)日：2008-05-13

    申请号：US11349135

    申请日：2006-02-08

    申请人： Jung-Hyun Lee ,  Yoon-Ho Khang

    发明人： Jung-Hyun Lee ,  Yoon-Ho Khang

    IPC分类号： C23C16/00 ,  C07C395/00

    CPC分类号： C23C16/305 ,  C07F7/10 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616

    摘要： A Te precursor containing Te, a 15-group compound (for example, N) and/or a 14-group compound (for example, Si), a method of preparing the Te precursor, a Te-containing chalcogenide thin layer including the Te precursor, a method of preparing the thin layer; and a phase-change memory device. The Te precursor may be deposited at lower temperatures for forming a Te-containing chalcogenide thin layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si). For example, the Te precursor may employ plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) at lower deposition temperatures. The GST phase-change layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si) formed by employing the Te precursor may have a decreased reset current, and thus when a memory device including the same is employed, its integration may be possible, and operation with higher capacity and/or higher speed may be possible.

    摘要翻译： 含有Te，15组化合物（例如N）和/或14组化合物（例如Si）的Te前体，制备Te前体的方法，含Te的硫族化物薄层，包括Te 前体，制备薄层的方法; 和相变存储器件。 可以在较低温度下沉积Te前体以形成掺杂有15族化合物（例如N）和/或14-基团化合物（例如Si）的含Te的硫族化物薄层。 例如，Te前体可以在较低的沉积温度下使用等离子体增强化学气相沉积（PECVD）或等离子体增强原子层沉积（PEALD）。 掺杂有通过使用Te前体形成的15族化合物（例如N）和/或14族化合物（例如Si）的GST相变层可能具有降低的复位电流，因此当 使用包括其的存储器件，其集成是可能的，并且具有更高容量和/或更高速度的操作可能是可能的。