公开(公告)号：US20080160184A1

公开(公告)日：2008-07-03

申请号：US12043057

申请日：2008-03-05

Applicant: Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

Inventor： Hideki Sato ,  Kokichi Aiso ,  Yukio Wakui

IPC: B05D5/12 ,  H01F1/00

CPC classification number: G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/09 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052 ,  Y10T29/49067

Abstract: A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

Abstract translation: 磁传感器包括磁阻元件和永磁体膜，它们组合在一起以形成形成在具有正方形形状的石英衬底上的GMR元件，其中永磁体膜成对并连接到磁阻元件的两端，使得X 通过将GMR元件相对于石英基板的四个边进行适当配置来实现轴向磁传感器和Y轴磁传感器。 这里，磁阻元件的被钉扎层的磁化方向相对于磁阻元件的长度方向相对于永久磁铁膜的磁化方向形成45°的规定角度。 因此，即使施加强磁场，也可以可靠地抑制GMR元件的桥连接的偏移变化; 因此可以显着地提高对强磁场的电阻特性。

公开(公告)号：US20070277910A1

公开(公告)日：2007-12-06

申请号：US11606164

申请日：2006-11-30

Applicant: Takao Ochiai ,  Shinjiro Umehara ,  Hiroshi Ashida ,  Masashige Sato ,  Kazuo Kobayashi

Inventor： Takao Ochiai ,  Shinjiro Umehara ,  Hiroshi Ashida ,  Masashige Sato ,  Kazuo Kobayashi

IPC: H01F41/22

CPC classification number: H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/3272 ,  H01F41/304

Abstract: An electrode, an antiferromagnetic film, a ferromagnetic film, a nonmagnetic film, a ferromagnetic film, a tunnel insulating film, a ferromagnetic film, a first Ta film, a Ru film, and a second Ta film are formed in sequence on a substrate. The thickness of the second Ta film is about 0.5 nm. The second Ta film is naturally oxidized after being formed. Then, heat treatment to improve the characteristic of a TMR film is performed. The temperature of this heat treatment is approximately from 200° C. to 300° C. In a conventional manufacturing method, film peeling occurs in this heat treatment, and accompanying this, defects such as occurrence of holes and wrinkles further occur, but in the present method, such an occurrence of defects is prevented since the Ta film is formed at the uppermost surface. Subsequently, the Ta film and so on are patterned.

Abstract translation: 在基板上依次形成电极，反铁磁膜，铁磁膜，非磁性膜，铁磁膜，隧道绝缘膜，铁磁膜，第一Ta膜，Ru膜和第二Ta膜。 第二Ta膜的厚度为约0.5nm。 第二个Ta膜在形成后被自然氧化。 然后，进行热处理以提高TMR膜的特性。 该热处理的温度约为200℃〜300℃。在以往的制造方法中，在该热处理中发生膜剥离，伴随此，进一步发生孔和褶皱等的缺陷， 由于在最上表面形成Ta膜，因此防止了这种缺陷的发生。 随后，对Ta膜等进行图案化。

公开(公告)号：US07264768B2

公开(公告)日：2007-09-04

申请号：US11060794

申请日：2005-02-18

Applicant: Mark E. Tuttle ,  Ronald A. Weimer

Inventor： Mark E. Tuttle ,  Ronald A. Weimer

IPC: F24J3/00

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F1/0009 ,  H01F41/304

Abstract: A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a Néel temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.

Abstract translation: 用于磁性退火在晶片上形成的磁阻元件的装置包括加热的卡盘和用于将晶片单独地单独地放置在卡盘上的输送机构。 线圈与卡盘相邻，并且在将晶片加热到反铁磁层的Néel温度之后产生磁场。 控制系统调节加热卡盘的温度，磁场的强度以及加热每个卡盘以控制退火过程的时间段。 退火元件被结合在磁存储器件的制造中。

公开(公告)号：US20070115596A1

公开(公告)日：2007-05-24

申请号：US11561339

申请日：2006-11-17

Applicant: Ryo Nakabayashi ,  Yosuke Ide ,  Masamichi Saito ,  Naoya Hasegawa

Inventor： Ryo Nakabayashi ,  Yosuke Ide ,  Masamichi Saito ,  Naoya Hasegawa

IPC: G11B5/33

CPC classification number: G11B5/3906 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/1936 ,  H01F10/3263 ,  H01F41/18 ,  H01F41/304

Abstract: A magnetic detecting element and method of manufacturing the same are provided. The magnetic detecting element including a free magnetic layer and a second pinned magnetic layer is formed of a CoMnGeSi alloy layer represented by a composition formula of Co2xMnx(Ge1-zSiz)y (where x and y are atomic percent, and 3x+y=100 atomic percent). The content y in the composition formula is 23 atomic percent to 26 atomic percent, and a Si ratio Z in GeSi is 0.1 to 0.6. Accordingly, ΔRA identical with a case when a CoMnGe alloy is used can be obtained, and a coupling magnetic field Hin or a coercive force Hc can be reduced.

Abstract translation: 提供一种磁检测元件及其制造方法。 包括自由磁性层和第二被钉扎磁性层的磁性检测元件由Co 2 N x Mn x x（Ge）的组成式表示的CoMnGeSi合金层形成 其中x和y是原子百分比，3x + y = 100原子百分比）。 组成式中的含量y为23原子％〜26原子％，GeSi中的Si比Z为0.1〜0.6。 因此，可以获得与使用CoMnGe合金的情况相同的DeltaRA，并且可以减小耦合磁场Hin或矫顽力Hc。

公开(公告)号：US20060234397A1

公开(公告)日：2006-10-19

申请号：US11451925

申请日：2006-06-12

Applicant: James Deak

Inventor： James Deak

IPC: H01L21/00

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3272 ,  H01F41/304 ,  H01L43/12

Abstract: A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer further includes a spacer layer over the pinned layer, and a ferromagnetic reference layer over the spacer layer, the reference layer having a second thickness. The method further includes annealing the fixed layer using a temporal temperature/magnetic field profile, the profile having a maximum magnetic field magnitude (Hanneal). The profile is selected based on the first thickness of the pinned layer and the second thickness of the reference layer.

公开(公告)号：US20050164414A1

公开(公告)日：2005-07-28

申请号：US10764832

申请日：2004-01-26

Applicant: James Deak

Inventor： James Deak

IPC: G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L21/00 ,  H01L43/12

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3272 ,  H01F41/304 ,  H01L43/12

Abstract: A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer further includes a spacer layer over the pinned layer, and a ferromagnetic reference layer over the spacer layer, the reference layer having a second thickness. The method further includes annealing the fixed layer using a temporal temperature/magnetic field profile, the profile having a maximum magnetic field magnitude (Hanneal). The profile is selected based on the first thickness of the pinned layer and the second thickness of the reference layer.

Abstract translation: 提供了一种制造用于MRAM器件的固定层的方法。 该方法包括提供固定层。 固定层包括衬底上的反铁磁钉扎层和钉扎层上的铁磁性钉扎层，钉扎层具有第一厚度。 固定层还包括被钉扎层上的间隔层，以及间隔层上方的铁磁参考层，参考层具有第二厚度。 该方法还包括使用时间温度/磁场分布对固定层进行退火，该轮廓具有最大磁场强度（H H 3退火）。 基于被钉扎层的第一厚度和参考层的第二厚度来选择轮廓。

公开(公告)号：US20050133118A1

公开(公告)日：2005-06-23

申请号：US11060794

申请日：2005-02-18

Applicant: Mark Tuttle ,  Ronald Weimer

Inventor： Mark Tuttle ,  Ronald Weimer

IPC: H01F41/30 ,  H01F1/00 ,  C21D1/04 ,  G11B5/33

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F1/0009 ,  H01F41/304

Abstract: A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a Néel temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.

Abstract translation: 用于磁性退火在晶片上形成的磁阻元件的装置包括加热的卡盘和用于将晶片单独地单独地放置在卡盘上的输送机构。 线圈与卡盘相邻，并且在将晶片加热到反铁磁层的Néel温度之后产生磁场。 控制系统调节加热卡盘的温度，磁场的强度以及加热每个卡盘以控制退火过程的时间段。 退火元件被结合在磁存储器件的制造中。

公开(公告)号：US06549384B2

公开(公告)日：2003-04-15

申请号：US09861413

申请日：2001-05-18

Applicant: Masamichi Saito ,  Naoya Hasegawa

Inventor： Masamichi Saito ,  Naoya Hasegawa

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3951 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49055 ,  Y10T29/49067

Abstract: A dual spin-valve magnetoresistive thin film elements includes a first dual pinned magnetic layer and a second dual pinned magnetic layer. A first pinned magnetic layer of the first dual pinned magnetic layer contacts a first antiferromagnetic layer and a second pinned magnetic layer of the first dual pinned magnetic layer contacts a first nonmagnetic electrically conductive layer. The first pinned magnetic layer of the second dual pinned magnetic layer contacts a second antiferromagnetic layer and the second pinned magnetic of the second dual pinned magnetic layer contacts a second nonmagnetic electrically conductive layer. A synthesized magnetic moment of the first pinned magnetic layer and the second pinned magnetic layer in the first dual pinned magnetic layer, and a synthesized magnetic moment the first pinned magnetic layer and the second pinned magnetic layer in the second dual pinned magnetic layer face in opposite directions.

Abstract translation: 双自旋阀磁阻薄膜元件包括第一双重固定磁性层和第二双重固定磁性层。 第一双重钉扎磁性层的第一固定磁性层接触第一反铁磁层，并且第一双重钉扎磁性层的第二钉扎磁性层接触第一非磁性导电层。 第二双钉扎磁性层的第一钉扎磁性层接触第二反铁磁性层，第二双重钉扎磁性层的第二固定磁体接触第二非磁性导电层。 在第一双重固定磁性层中的第一被钉扎磁性层和第二固定磁性层的合成磁矩和第二双重固定磁性层中的第一固定磁性层和第二固定磁性层的合成磁矩面对相反 方向。

公开(公告)号：US20020167769A1

公开(公告)日：2002-11-14

申请号：US09358123

申请日：1999-07-20

Inventor： MASAMICHI SAITO ,  NAOYA HASEGAWA

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3951 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49055 ,  Y10T29/49067

Abstract: An antiferromagnetic layer is formed of a PtMn alloy which has high blocking temperature and further generates a great exchange coupling magnetic field with a first pinned magnetic layer. Further, by appropriately adjusting the film thickness ratio of the first pinned magnetic layer and a second pinned magnetic layer, the film thickness of a nonmagnetic electrically conductive layer and the antiferromagnetic layer, and so forth, an exchange coupling magnetic field of at least 500 (Oe) or greater, preferably 1,000 (Oe) or greater, can be obtained.

Abstract translation: 反铁磁层由具有高阻挡温度的PtMn合金形成，并进一步与第一固定磁性层产生大的交换耦合磁场。 此外，通过适当调整第一被钉扎磁性层和第二钉扎磁性层的膜厚比，非磁性导电层和反铁磁性层的膜厚等，至少为500的交换耦合磁场（ Oe）以上，优选为1,000（Oe）以上。

公开(公告)号：US20010045245A1

公开(公告)日：2001-11-29

申请号：US09865718

申请日：2001-05-29

Applicant: TDK CORPORATION

Inventor： Koji Shimazawa ,  Manabu Ohta ,  Tetsuro Sasaki

IPC: H01F041/22

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  H01F41/304 ,  Y10T29/49034

Abstract: A manufacturing method of a thin-film magnetic head with a spin valve effect MR read sensor includes a temperature-annealing step of firmly fixing the direction of the pinned magnetization in the spin valve effect MR sensor. The temperature-annealing step is executed by a plurality of times.