Invention Application
- Patent Title: Single substrate annealing of magnetoresistive structure
- Patent Title (中): 磁阻结构的单基板退火
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Application No.: US11060794Application Date: 2005-02-18
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Publication No.: US20050133118A1Publication Date: 2005-06-23
- Inventor: Mark Tuttle , Ronald Weimer
- Applicant: Mark Tuttle , Ronald Weimer
- Main IPC: H01F41/30
- IPC: H01F41/30 ; H01F1/00 ; C21D1/04 ; G11B5/33

Abstract:
A device for magnetically annealing magnetoresistive elements formed on wafers includes a heated chuck and a delivery mechanism for individually placing the wafers individually on the chuck one at a time. A coil is adjacent to the chuck and generates a magnetic field after the wafer is heated to a Néel temperature of an anti-ferromagnetic layer. A control system regulates the temperature of the heated chuck, the strength of the magnetic field, and a time period during which each chuck is heated to control the annealing process. The annealed elements are incorporated in the fabrication of magnetic memory devices.
Public/Granted literature
- US07264768B2 Single substrate annealing of magnetoresistive structure Public/Granted day:2007-09-04
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