公开(公告)号：US06555407B1

公开(公告)日：2003-04-29

申请号：US09693233

申请日：2000-10-20

申请人： Nicolae Pantazi Chitica ,  Fredrik Salomonsson ,  Anita Risberg

发明人： Nicolae Pantazi Chitica ,  Fredrik Salomonsson ,  Anita Risberg

IPC分类号： H01L2100

CPC分类号： C30B33/005 ,  B01J3/006 ,  B01J15/00 ,  C30B29/40 ,  H01L21/02178 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/31666

摘要： A method of carrying out the controlled oxidation of A material, such as Al(Ga)As is oxidized in a controlled manner placing it in a reactor, and causing a carrier gas containing an oxidizing vapour, such as water, at a controlled partial pressure to flow over the oxidizable Material. In this way, the reaction process can be made sensitive to only one variable.

摘要翻译： 实施Al（Ga）As的A材料的受控氧化的方法以受控的方式被氧化，将其放置在反应器中，并且以受控的分压使包含氧化蒸气如水的载气 以流过可氧化材料。 以这种方式，可以使反应过程仅对一个变量敏感。

公开(公告)号：US06540509B2

公开(公告)日：2003-04-01

申请号：US09867564

申请日：2001-05-31

申请人： Takanobu Asano ,  Katsutoshi Ishii ,  Hiroyuki Yamamoto ,  George Hoshi ,  Kazutoshi Miura

发明人： Takanobu Asano ,  Katsutoshi Ishii ,  Hiroyuki Yamamoto ,  George Hoshi ,  Kazutoshi Miura

IPC分类号： F27B500

CPC分类号： C23C16/45561 ,  C23C16/401 ,  C23C16/452 ,  C23C16/4557 ,  C30B33/005 ,  H01L21/67109

摘要： The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.

摘要翻译： 本发明一般涉及用于对待处理物体进行热处理的热处理系统和方法。 特别地，本发明涉及一种热处理系统，其中待处理物体被运送在反应容器中，该反应容器被减压至预定的真空度并将其内部加热到预定的工艺温度，并且 处理气体经由供气通道供给到反应容器中以处理物体。

公开(公告)号：US20020192978A1

公开(公告)日：2002-12-19

申请号：US10212892

申请日：2002-08-05

发明人： F. Daniel Gealy ,  Scott DeBoer ,  Dave Chapek ,  Husam N. Al-Shareef ,  Randhir Thakur

IPC分类号： H01L021/31 ,  H01L021/469

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600null to 750null C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

公开(公告)号：US06461948B1

公开(公告)日：2002-10-08

申请号：US09538558

申请日：2000-03-29

申请人： James E. Rapp ,  Russell B. Rogenski

发明人： James E. Rapp ,  Russell B. Rogenski

IPC分类号： H01L2122

CPC分类号： H01L21/2255 ,  C30B29/06 ,  C30B31/02 ,  C30B33/005 ,  H01L21/2225 ,  H01L21/223

摘要： A method of doping silicon that involves placing a silicon wafer in spaced relationship to a solid phosphorus dopant source at a first temperature for a time sufficient to deposit a phosphorus-containing layer on the surface of the wafer and subsequently oxidizing the doped silicon wafer with wet oxygen or pyrogenic steam at a second temperature lower than the first temperature. The silicon wafer is maintained in spaced relationship to the solid phosphorus dopant source during the oxidizing step. The temperatures are selected such that the solid phosphorus dopant source evolves P2O5 at the first temperature and the second temperature is sufficiently lower than the first temperature to decrease evolution of P2O5 from the solid phosphorus dopant source during the oxidizing step.

摘要翻译： 一种掺杂硅的方法，其涉及将硅晶片在第一温度下与固态磷掺杂剂源间隔开的时间足以将含磷层沉积在晶片的表面上，随后用湿法氧化掺杂的硅晶片 氧气或热原蒸汽在低于第一温度的第二温度下进行。 在氧化步骤期间，硅晶片保持与固体磷掺杂剂源的间隔关系。 选择温度使得固体磷掺杂剂源在第一温度下放出P2O5，第二温度足够低于第一温度，以在氧化步骤期间从固体磷掺杂剂源减少P2O5的释放。

公开(公告)号：US20020063119A1

公开(公告)日：2002-05-30

申请号：US09989080

申请日：2001-11-21

申请人： TOKYO ELECTRON LIMITED

发明人： Takashi Tanaka ,  Shinji Nagashima ,  Hiroyuki Sakai

IPC分类号： C23C016/00

CPC分类号： H01L21/67253 ,  C30B33/005

摘要： A heat treatment apparatus for applying a predetermined heat treatment to a substrate includes: for example, a dielectric low oxygen controlled cure unit (DLC unit) for forming an interlayer insulating film on a semiconductor wafer W; a hot plate for supporting the wafer W a predetermined distance apart from the surface thereof; a chamber for housing the wafer W; a gas collecting port formed in that portion of the hot plate which corresponds to the lower side of the wafer W when the wafer W is disposed on the hot plate; and an oxygen sensor for measuring the oxygen concentration in the gas collected from the gas collecting port. Since the oxygen concentration can be measured during the heat treatment to the wafer W, the characteristics of the interlayer insulating film formed can be maintained constant.

摘要翻译： 用于对基板进行预定热处理的热处理装置包括：例如在半导体晶片W上形成层间绝缘膜的电介质低氧控制固化单元（DLC单元）; 用于将晶片W从其表面隔开预定距离的热板; 用于容纳晶片W的室; 形成在所述热板的与所述晶片W的配置在所述热板上的下侧相对应的部分的气体收集口; 以及用于测量从气体收集口收集的气体中的氧浓度的氧传感器。 由于可以在对晶片W的热处理期间测量氧浓度，所以可以将形成的层间绝缘膜的特性保持恒定。

公开(公告)号：US06329269B1

公开(公告)日：2001-12-11

申请号：US08622842

申请日：1996-03-27

申请人： Hiroki Hamada ,  Kiichi Hirano ,  Akifumi Sasaki

发明人： Hiroki Hamada ,  Kiichi Hirano ,  Akifumi Sasaki

IPC分类号： H01L2100

CPC分类号： H01L21/02667 ,  C30B1/023 ,  C30B29/06 ,  C30B33/005 ,  H01L21/02532 ,  H01L21/2022

摘要： A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing the oxide film which is formed on the surface of the semiconductor film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底上形成非晶半导体膜，在含有水蒸气和氧气的气氛中氧化非晶半导体膜的表面，并除去形成在该表面上的氧化物膜 半导体膜。

公开(公告)号：US06271151B1

公开(公告)日：2001-08-07

申请号：US08885140

申请日：1997-06-30

申请人： Donald L. Wollesen

发明人： Donald L. Wollesen

IPC分类号： H01L2131

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/28211 ,  Y10T117/1008

摘要： A method and apparatus for controlling the growth of an oxide, such as a gate oxide, in a semiconductor device manufacturing process takes into consideration the ambient atmospheric pressure in order to reduce the variance in gate oxide thicknesses between wafer lots. The pressure in the oxide diffusion tube is maintained at a constant pressure near the ambient atmospheric pressure during the oxide diffusion process. Alternatively, the furnace time is changed from lot to lot as a function of changes in the ambient atmospheric pressure in order to maintain the gate oxide thickness at a constant value between wafer lots.

摘要翻译： 在半导体器件制造工艺中，用于控制氧化物（例如栅极氧化物）的生长的方法和装置考虑了环境大气压力，以便减小晶片批次之间的栅极氧化物厚度的变化。 在氧化物扩散过程中，氧化物扩散管中的压力保持在接近环境大气压的恒定压力。 或者，作为周围大气压力的变化的函数，炉时间从批次变化到批次，以便将晶​​片批次之间的栅极氧化物厚度保持在恒定值。

公开(公告)号：US5902519A

公开(公告)日：1999-05-11

申请号：US819794

申请日：1997-03-18

申请人： Harold M. Stoll

发明人： Harold M. Stoll

IPC分类号： C30B33/00 ,  G03H1/02 ,  G11B7/0065 ,  G11B7/26 ,  G02B1/02

CPC分类号： G11B7/26 ,  C30B29/30 ,  C30B33/005 ,  G11B7/0065 ,  G03H2001/026 ,  G03H2001/0268

摘要： A process for oxidizing iron ions contained within iron-doped lithium niobate. The process comprises the steps of protonating the iron-doped lithium niobate crystal and then placing the same into a pressure chamber where between 10-100 atmospheres of dry, ultra-pure pressurized oxygen are applied. While under pressure, the crystal is heated to approximately 950.degree. C. at a rate not to exceed 50.degree. C. per minute, and preferably at a rate not less than 25.degree. C. per minute. The crystals are then continuously heated at approximately 950.degree. C. for approximately 50 hours and then cooled to 30.degree. C. at a rate not to exceed 50.degree. C. per minute, and preferably at a rate not less than approximately 25.degree. C. per minute. The resulting lithium niobate crystal will thereafter contain iron ions wherein the divalent iron ion ration to the trivalent iron ion ratio is approximately 1:100.

摘要翻译： 在铁掺杂的铌酸锂中氧化铁离子的方法。 该方法包括以下步骤：将掺杂铌酸锂的晶体质子化，然后将其置于施加10-100大气压的干，超纯压力氧气的压力室中。 在压力下，以不超过50℃/分钟的速度将晶体加热至约950℃，优选以不低于25℃/分钟的速度加热。 然后将晶体在约950℃下连续加热约50小时，然后以不超过50℃/分钟的速率冷却至30℃，优选以不低于约25℃的速率冷却。 每分钟。 所得到的铌酸锂晶体之后将含有铁离子，其中二价铁离子与三价铁离子的比例约为1:100。

公开(公告)号：US5902135A

公开(公告)日：1999-05-11

申请号：US730878

申请日：1996-10-18

申请人： Hans-Joachim Schulze

发明人： Hans-Joachim Schulze

IPC分类号： C30B31/06 ,  C30B33/00 ,  H01L21/22 ,  H01L21/322 ,  H01L21/324 ,  H01L21/31

CPC分类号： C30B29/06 ,  C30B33/005 ,  H01L21/3221

摘要： A method of removing vacancies in the crystal lattice of silicon wafers is provided. In particular, silicon wafers obtained from drawn rods have significantly higher defect densities in the central region as compared to the outer peripheries of the wafers. Before the diffusion of doping materials, the wafers are oxidized at a temperature that is generally lower than the diffusion temperature. As a result, the vacancies in the crystal lattice are filled with silicon which prevents the accumulation of heavy metals into the vacancies during the doping process. The performance and lifespan of the carrier in the central region of the wafers is thereby significantly increased.

摘要翻译： 提供了去除硅晶片的晶格中的空位的方法。 特别地，与拉伸棒获得的硅片相比，晶片的外周边的中心区域的缺陷密度明显更高。 在掺杂材料扩散之前，晶片在通常低于扩散温度的温度下被氧化。 结果，晶格中的空位填充有硅，这防止了在掺杂过程中重金属向空位的积累。 因此，晶片的中心区域中的载体的性能和寿命显着增加。

公开(公告)号：US5752819A

公开(公告)日：1998-05-19

申请号：US703240

申请日：1996-08-26

申请人： Richard Rene Hansotte, Jr. ,  Dieter Klaus Neff ,  Dennis Arthur Rock ,  Jeffrey Alan Walker ,  Roland Michael Wanser

发明人： Richard Rene Hansotte, Jr. ,  Dieter Klaus Neff ,  Dennis Arthur Rock ,  Jeffrey Alan Walker ,  Roland Michael Wanser

IPC分类号： C30B31/16 ,  C30B33/00 ,  F27D17/00 ,  F27D3/12

CPC分类号： F27D17/001 ,  C30B31/16 ,  C30B33/00 ,  C30B33/005

摘要： An exhaust system for use with a high temperature furnace used to perform oxidation and/or annealing operations of the type used in semiconductor fabrication. The exhaust system is designed to permit the furnace to be used with a controlled environment chamber surrounding the entry to the process chamber of the furnace. The exhaust system allows a relatively high velocity flow of exhaust gas from the process chamber through the exhaust system to occur when a positive pressure (e.g., annealing) operations are performed. Such high velocity flow prevents (a) backstreaming and (b) the accumulation of non-uniform concentrations of exhaust gases in the exhaust system, thereby permitting the accurate monitoring of the concentration of a selected gas in the exhaust system. Based on such monitoring, the opening of the door to the process chamber of the furnace may be prevented when the concentration of the selected gas exceeds a predetermined level. Preferably, all portions of the exhaust system potentially exposed to process chamber gases are made from quartz.