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    Ion implanting apparatus
    51.
    发明授权
    Ion implanting apparatus 有权
    离子注入装置

    公开(公告)号：US07847271B2

    公开(公告)日：2010-12-07

    申请号：US12279653

    申请日：2007-02-15

    Applicant: Seiji Ogata ,  Ryota Fukui ,  Hidekazu Yokoo ,  Tsutomu Nishihashi

    Inventor： Seiji Ogata ,  Ryota Fukui ,  Hidekazu Yokoo ,  Tsutomu Nishihashi

    IPC: H01J37/317 ,  H01J37/256

    CPC classification number: H01J37/3171 ,  H01J2237/05 ,  H01J2237/083 ,  H01J2237/31703

    Abstract: An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.

    Abstract translation: 用于通过从离子源提取氢离子或稀土离子来制造单晶膜的离子注入机，用第一扇形电磁体选择期望的离子，用扫描仪扫描离子，使离子与第二扇形电磁体 ，并将其植入基底; 离子源被配置为位于第一扇区电磁体的入射侧焦点附近。 在这种情况下，当离子源的提取部分的孔径为圆形并且偏转表面中的入射侧焦点和与第一扇形电磁体垂直的入射侧焦点一致时，通过第一扇形电磁体之后的离子束变得完全 平行于两个表面，斑点形状变成圆形。

    SPHERICAL ABERRATION CORRECTION DECELERATING LENS, SPHERICAL ABERRATION CORRECTION LENS SYSTEM, ELECTRON SPECTROMETER, AND PHOTOELECTRON MICROSCOPE
    52.
    发明申请
    SPHERICAL ABERRATION CORRECTION DECELERATING LENS, SPHERICAL ABERRATION CORRECTION LENS SYSTEM, ELECTRON SPECTROMETER, AND PHOTOELECTRON MICROSCOPE 审中-公开
    球形抛光校正减光镜，球面光圈校正镜系统，电子光谱仪和光电显微镜

    公开(公告)号：US20100001202A1

    公开(公告)日：2010-01-07

    申请号：US12374892

    申请日：2007-07-26

    Applicant: Hiroyuki Matsuda ,  Horoshi Daimon

    Inventor： Hiroyuki Matsuda ,  Horoshi Daimon

    IPC: H01J3/18 ,  G01N23/00

    CPC classification number: H01J37/12 ,  H01J37/252 ,  H01J2237/05 ,  H01J2237/153 ,  H01J2237/1532 ,  H01J2237/244 ,  H01J2237/2511 ,  H01J2237/2538

    Abstract: A spherical aberration correction decelerating lens corrects a spherical aberration occurring in an electron beam or an ion beam (hereinafter, referred to as “beam”) emitted from a predetermined object plane position with a certain divergence angle, and said spherical aberration correction decelerating lens comprises at least two electrodes, each of which is constituted of a surface of a solid of revolution whose central axis coincides with an optical axis and each of which receives an intentionally set voltage applied by an external power supply, wherein at least one of the electrodes includes one or more meshes (M) which has a concaved shape opposite to an object plane (P0) and which is constituted of a surface of a solid of revolution so that a central axis of the concaved shape coincides with the optical axis, and a voltage applied to each of the electrodes causes the beam to be decelerated and causes formation of a decelerating convergence field for correcting the spherical aberration occurring in the beam. This makes it possible to provide a spherical aberration correction decelerating lens which converges a beam, emitted from the sample and having high energy and a large divergence angle, onto an image plane.

    Abstract translation: 球面像差校正减速透镜校正从具有一定发散角的预定物平面位置发射的电子束或离子束（以下称为“光束”）中发生的球面像差，并且所述球面像差校正减速透镜包括 至少两个电极，每个电极由其中心轴与光轴重合的旋转实体表面构成，每个电极接收由外部电源施加的有意设定的电压，其中至少一个电极包括 一个或多个网格（M），其具有与物平面（P0）相反的凹形，并且由旋转实体的表面构成，使得凹形的中心轴与光轴重合，并且电压 施加到每个电极使得光束减速，并且形成用于校正球面像差的减速会聚场 在梁中发生。 这使得可以提供一种球面像差校正减速透镜，其将从样品发射并具有高能量和大发散角的光束会聚到图像平面上。

    LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION
    53.
    发明申请
    LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION 有权
    低污染，低能量束流建筑用于高电流离子植入

    公开(公告)号：US20090267001A1

    公开(公告)日：2009-10-29

    申请号：US12108890

    申请日：2008-04-24

    Applicant: Yongzhang Huang

    Inventor： Yongzhang Huang

    IPC: G21K5/10

    CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J37/3007 ,  H01J2237/022 ,  H01J2237/05 ,  H01J2237/202 ,  H01J2237/24528

    Abstract: An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.

    Abstract translation: 一种离子注入系统，包括沿光束路径产生离子束的离子源，离子源下游的质量分析器组件，其对离子束执行质量分析和角度校正;分辨孔径电极，包括至少一个电极 所述质量分析器部件并且沿着所述光束路径具有根据所选择的质量分辨率和光束包络的尺寸和形状;在所述分辨孔径电极下游的偏转元件改变离开偏转元件的离子束的路径;减速电极 在偏转元件的下游，使离子束减速，在终端站内的支撑平台，用于保持和定位植入有带电离子的工件，并且其中终端站逆时针安装大约八度，使得偏转的离子束垂直 到工件。

    Shielding assembly for semiconductor manufacturing apparatus and method of using the same
    54.
    发明申请
    Shielding assembly for semiconductor manufacturing apparatus and method of using the same 有权
    半导体制造装置的屏蔽组件及其使用方法

    公开(公告)号：US20080203330A1

    公开(公告)日：2008-08-28

    申请号：US12150207

    申请日：2008-04-24

    Applicant: Cornel Danciu ,  Thomas Abels ,  Brian Good

    Inventor： Cornel Danciu ,  Thomas Abels ,  Brian Good

    IPC: G21F3/00

    CPC classification number: H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

    Abstract: A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

    Abstract translation: 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

    Method and device for distance measurement
    55.
    发明申请
    Method and device for distance measurement 失效
    距离测量方法和装置

    公开(公告)号：US20070164215A1

    公开(公告)日：2007-07-19

    申请号：US11642249

    申请日：2006-12-20

    Applicant: Gero Walter ,  Rainer Harle

    Inventor： Gero Walter ,  Rainer Harle

    IPC: G01N23/00

    CPC classification number: H01J37/26 ,  H01J37/21 ,  H01J2237/047 ,  H01J2237/05 ,  H01J2237/216 ,  H01J2237/24507 ,  H01J2237/2485 ,  H01J2237/28 ,  H01J2237/2802

    Abstract: A method and a device for determining the distance from the sample to be examined to at least one reference point which function independently of the type of sample. A signal is modulated to a first potential of a sample and a primary particle beam is directed at the sample, resulting in a secondary particle beam being formed by an interaction, the particles of this beam having the modulated signal. The particles of the secondary particle beam and the signal modulated to the potential of the particles of the secondary particle beam are detected. By comparing the detected modulated signal to a reference signal, the distance is determined from the relationship between the reference signal and the detected modulated signal. The device has the corresponding components for implementing the method.

    Abstract translation: 一种用于确定从被检测样品到至少一个独立于样品类型起作用的参考点的距离的方法和装置。 信号被调制到样品的第一电位，并且一次粒子束被引导到样品，导致通过相互作用形成二次粒子束，该束的粒子具有调制信号。 检测二次粒子束的粒子和调制到二次粒子束的粒子的电位的信号。 通过将检测到的调制信号与参考信号进行比较，根据参考信号与检测到的调制信号之间的关系确定距离。 该设备具有用于实现该方法的相应组件。

    Scanning electron microscope
    56.
    发明授权
    Scanning electron microscope 有权
    扫描电子显微镜

    公开(公告)号：US06646262B1

    公开(公告)日：2003-11-11

    申请号：US10069571

    申请日：2002-07-15

    Applicant: Hideo Todokoro ,  Makoto Ezumi ,  Yoichi Ose ,  Naomasa Suzuki

    Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yoichi Ose ,  Naomasa Suzuki

    IPC: H01J3720

    CPC classification number: H01J37/26 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/05 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/26

    Abstract: A scanning electron microscope with an energy filter which can positively utilize secondary electrons and/or reflected electrons which collide against a mesh electrode and are lost. The scanning electron microscope which has a porous electrode for producing an electric field for energy-filtering electrons produced by applying a primary electron beam to a sample and a 1st electron detector which detects electrons passing through the porous electrode is characterized by further having a porous structure provided near the sample, a deflector which deflects electrons from the axis of the primary electron beam, and a 2nd electron detector which detects the electrons deflected by the deflector.

    Abstract translation: 具有能量过滤器的扫描电子显微镜，其能够正确地利用与网状电极碰撞而损失的二次电子和/或反射电子。 具有用于产生用于对样品施加一次电子束产生的电子能量的电场的多孔电极的扫描电子显微镜和检测通过多孔电极的电子的第一电子检测器的特征在于还具有多孔结构 设置在样品附近，偏转器从一次电子束的轴线偏转电子;以及第二电子检测器，其检测偏转器偏转的电子。

    Ion source gas injection beam shaping
    57.
    发明授权
    Ion source gas injection beam shaping 有权

    公开(公告)号：US11769648B2

    公开(公告)日：2023-09-26

    申请号：US17513245

    申请日：2021-10-28

    Applicant: Applied Materials, Inc.

    Inventor： Adam M. McLaughlin

    IPC: H01J37/08 ,  H01J37/317

    CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/05

    Abstract: An ion source for extracting a ribbon ion beam with improved height uniformity is disclosed. Gas nozzles are disposed in the chamber proximate the extraction aperture. The gas that is introduced near the extraction aperture serves to shape the ribbon ion beam as it is being extracted. For example, the height of the ribbon ion beam may be reduced by injecting gas above and below the ion beam so as to compress the extracted ion beam in the height direction. In some embodiments, the feedgas is introduced near the extraction aperture. In other embodiments, a shield gas, such as an inert gas, is introduced near the extraction aperture.

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