公开(公告)号：US09881964B1

公开(公告)日：2018-01-30

申请号：US15427748

申请日：2017-02-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dajiang Yang ,  Gang Chen ,  Vincent Venezia ,  Dyson H. Tai

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L29/08 ,  H01L29/10 ,  H01L21/265

CPC classification number: H01L27/14643 ,  H01L21/26513 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689

Abstract: An image sensor includes a photodiode disposed in a first semiconductor material and a floating diffusion disposed proximate to the photodiode in the first semiconductor material. A source follower transistor is disposed in part in a second semiconductor material and includes: a first doped region, a third doped region, and a second doped region with an opposite polarity as the first doped region and the third doped region, and a gate electrode coupled to the floating diffusion and disposed in the first semiconductor material and aligned with the second doped region in the second semiconductor material of the source follower transistor.

公开(公告)号：US20180027196A1

公开(公告)日：2018-01-25

申请号：US15215139

申请日：2016-07-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Xin Wang ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/355 ,  H04N9/04 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/35563 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.

公开(公告)号：US09799696B1

公开(公告)日：2017-10-24

申请号：US15293149

申请日：2016-10-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Duli Mao ,  Cunyu Yang ,  Gang Chen

IPC: H01L31/02 ,  H01L31/0264 ,  H01L31/0376 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a semiconductor material with a photodiode disposed in the semiconductor material. The image sensor also includes a transfer gate electrically coupled to the photodiode to extract image charge from the photodiode in response to a transfer signal. A floating diffusion is electrically coupled to the transfer gate to receive the image charge from the photodiode. At least one isolation structure is disposed in the photodiode, and the at least one isolation structure extends from a surface of the semiconductor material into the photodiode.

公开(公告)号：US09496304B2

公开(公告)日：2016-11-15

申请号：US14704493

申请日：2015-05-05

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu ,  Rongsheng Yang ,  Gang Chen ,  Howard E. Rhodes ,  Sohei Manabe ,  Dyson H. Tai

IPC: H01L29/66 ,  H01L27/146 ,  H04N5/378

CPC classification number: H01L27/1463 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

Abstract translation: 像素单元包括设置在半导体材料的第一区域中的外延层中以累积图像电荷的光电二极管。 浮置扩散部设置在设置在第一区域的外延层中的阱区域中。 耦合转移晶体管以选择性地将图像电荷从光电二极管转移到浮动扩散。 设置在半导体材料中的深沟槽隔离（DTI）结构。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括设置在DTI结构内部的掺杂半导体材料，其被选择性地耦合到读出脉冲电压，响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散。

公开(公告)号：US20160211295A1

公开(公告)日：2016-07-21

申请号：US14601010

申请日：2015-01-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Yuanwei Zheng ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647

Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.

Abstract translation: 背面照明图像传感器包括具有前侧和后侧的半导体材料。 半导体材料设置在图像传感器电路和滤光器阵列之间。 图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。 图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。 第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。 第二掺杂区域与第一掺杂区域电隔离。 具有第三掺杂区域的第二像素也包括在图像传感器中。 第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。

公开(公告)号：US09360607B1

公开(公告)日：2016-06-07

申请号：US14597821

申请日：2015-01-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Wei Zheng ,  Yin Qian ,  Chen-Wei Lu ,  Jin Li

IPC: H04N5/335 ,  G02B5/20 ,  H04N9/04 ,  G02B5/22 ,  H04N5/353 ,  H04N5/378

CPC classification number: G02B5/201 ,  G02B5/22 ,  G02B5/24 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/3532 ,  H04N5/378 ,  H04N9/045

Abstract: A color filter array for use on a color image sensor includes an oxide grid having sidewalls arranged to define openings in the oxide grid. Each one of the openings is to be disposed over a corresponding pixel cell of the color image sensor. Oxide support structures are disposed in an interior region of each opening in the oxide grid over a corresponding pixel cell of the color image sensor. The openings in the oxide grid are filled with color filter material of a corresponding color filter. A surface tension between each oxide support structure and the surrounding color filter material of the color filter is adapted to provide uniform thickness for the color filters within the corresponding openings in the oxide grid.

Abstract translation: 用于彩色图像传感器的滤色器阵列包括具有设置成在氧化物栅格中限定开口的侧壁的氧化物栅格。 开口中的每一个将被布置在彩色图像传感器的相应像素单元上。 氧化物支撑结构设置在彩色图像传感器的相应像素单元上的氧化物网格中的每个开口的内部区域中。 氧化物网格中的开口用相应滤色器的滤色器材料填充。 每个氧化物载体结构和滤色器的周围滤色器材料之间的表面张力适于为氧化物网格中的相应开口内的滤色器提供均匀的厚度。

公开(公告)号：US09344658B2

公开(公告)日：2016-05-17

申请号：US14448154

申请日：2014-07-31

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Tiejun Dai ,  Rui Wang ,  Dyson H. Tai ,  Sohei Manabe

IPC: H01L27/00 ,  H04N5/378 ,  H04N5/376 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H04N5/376

Abstract: A pixel cell includes a photodiode disposed within a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. A transfer transistor is disposed within the first semiconductor chip and coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage. The bias voltage generation circuit is coupled to the first semiconductor chip to bias the photodiode with the bias voltage. The bias voltage is negative with respect to a ground voltage of the second semiconductor chip. A floating diffusion is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.

Abstract translation: 像素单元包括设置在第一半导体芯片内的光电二极管，用于响应入射在光电二极管上的光累积图像电荷。 传输晶体管设置在第一半导体芯片内并耦合到光电二极管以从光电二极管传输图像电荷。 偏置电压产生电路，设置在第二半导体芯片内，用于产生偏置电压。 偏置电压产生电路耦合到第一半导体芯片以偏置偏压的光电二极管。 偏置电压相对于第二半导体芯片的接地电压为负。 浮置扩散部设置在第二半导体芯片内。 传输晶体管被耦合以将图像电荷从第一半导体芯片上的光电二极管转移到第二半导体芯片上的浮动扩散。

公开(公告)号：US20150108507A1

公开(公告)日：2015-04-23

申请号：US14056132

申请日：2013-10-17

Applicant: OmniVision Technologies, Inc.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Yin Qian ,  Dyson H. Tai

IPC: H01L27/146 ,  H01L31/12

CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/125

Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

Abstract translation: 背面照明图像传感器包括具有背面和前侧面的半导体层。 半导体层包括像素阵列区域，该像素阵列区域包括被配置为通过半导体层的背面接收图像光的多个光电二极管。 半导体层还包括外围电路区域，其包括用于操作与像素阵列区域相邻的多个光电二极管的外围电路元件。 外围电路元件发射光子。 外围电路区域还包括被配置为吸收由外围电路元件发射的光子以防止多个光电二极管接收光子的掺杂半导体区域。

公开(公告)号：US20220116516A1

公开(公告)日：2022-04-14

申请号：US17558199

申请日：2021-12-21

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Yuanmei Zheng ,  Qin Wang ,  Cunyu Yang ,  Guannan Chen ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Alexander Grant

IPC: H04N5/225 ,  G02B7/00 ,  G02B5/20

Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.

公开(公告)号：US10739646B1

公开(公告)日：2020-08-11

申请号：US16399373

申请日：2019-04-30

Applicant: OmniVision Technologies, Inc.

Inventor： Ming Zhang ,  Yin Qian ,  Libo Weng ,  Dyson H. Tai ,  Chia-Ying Liu ,  Chia-Jung Liu

IPC: G02F1/1337 ,  G02F1/1335 ,  G02F1/1362

Abstract: A reflective semiconductor device includes integrated circuitry disposed in a semiconductor layer. A first plurality of mirrors is formed in a mirror layer over the semiconductor layer, and each of the first plurality of mirrors is spaced apart from one another by at least a uniform width. A thin dielectric film layer covers sidewalls of the first plurality of mirrors and the semiconductor layer in the regions between the spaced apart first plurality of mirrors. A second plurality of mirrors are formed in the mirror layer between the thin dielectric film layer covered sidewalls of the first plurality of mirrors and over the thin dielectric film layer covering the semiconductor layer. Each one of the first and second plurality of mirrors has the uniform width, and is coupled to the integrated circuitry disposed in the semiconductor layer.