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公开(公告)号：US20190385850A1
公开(公告)日：2019-12-19
申请号：US16556122
申请日：2019-08-29
发明人： Reza Arghavani , Samantha Tan , Bhadri N. Varadarajan , Adrien LaVoie , Ananda K. Banerji , Jun Qian , Shankar Swaminathan
IPC分类号： H01L21/223 , H01L21/22 , C23C16/52 , C23C16/455 , H01L21/67 , H01L29/66 , H01L21/225 , C23C16/04 , C23C16/50
摘要： Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor. Also disclosed herein are multi-station substrate processing apparatuses for doping the fin-shaped channel regions of partially fabricated 3-D transistors.
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公开(公告)号：US10407773B2
公开(公告)日：2019-09-10
申请号：US15445632
申请日：2017-02-28
发明人： Adrien LaVoie , Hu Kang , Purushottam Kumar , Shankar Swaminathan , Jun Qian , Frank L. Pasquale , Chloe Baldasseroni
IPC分类号： C23C16/50 , C23C16/455 , C23C16/52 , H01L21/02 , C23C16/44
摘要： Disclosed are methods of depositing films of material on semiconductor substrates employing the use of a secondary purge. The methods may include flowing a film precursor into a processing chamber and adsorbing the film precursor onto a substrate in the processing chamber such that the precursor forms an adsorption-limited layer on the substrate. The methods may further include removing at least some unadsorbed film precursor from the volume surrounding the adsorbed precursor by purging the processing chamber with a primary purge gas, and thereafter reacting adsorbed film precursor while a secondary purge gas is flowed into the processing chamber, resulting in the formation of a film layer on the substrate. The secondary purge gas may include a chemical species having an ionization energy and/or a disassociation energy equal to or greater than that of O2. Also disclosed are apparatuses which implement the foregoing processes.
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公开(公告)号：US10202691B2
公开(公告)日：2019-02-12
申请号：US15636128
申请日：2017-06-28
发明人： Ishtak Karim , Adrien LaVoie
IPC分类号： H01L21/00 , C23C16/52 , C23C16/455 , C23C16/458 , C23C16/50 , H01L21/02 , C23C16/44 , C23C16/509 , H01J37/32 , H01L21/66
摘要： Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).
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公开(公告)号：US20180374697A1
公开(公告)日：2018-12-27
申请号：US15799679
申请日：2017-10-31
CPC分类号： H01L21/02274 , C23C16/4404 , C23C16/4412 , C23C16/45536 , C23C16/458 , C23C16/50 , C23C16/505 , C23C16/52 , H01J37/32183 , H01J37/32449 , H01J37/32862 , H01J2237/3321 , H01L21/02164
摘要： Certain embodiments herein relate to methods of increasing a reaction chamber batch size. A portion of a batch of wafers is processed within the chamber. The processing results in at least some off-target deposition of material on interior surfaces of the reaction chamber. A mid-batch chamber processing is conducted to stabilize the off-target deposition materials accumulated on the chamber interior surfaces. Another portion of the batch of wafers is processed within the chamber. In various embodiments, processing of the chamber (e.g., mid-batch) and subsequent portion of the batch of wafers is repeated until processing of all wafers is complete. Batch size refers to the number of wafers that may be processed in the reaction chamber between chamber clean cycles. Chamber interior surfaces are seasoned prior to batch processing. Seasoning of the chamber interior surfaces involves applying a coating of the same material that may be used for deposition on the wafers during processing of the same.
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公开(公告)号：US10145010B2
公开(公告)日：2018-12-04
申请号：US15809767
申请日：2017-11-10
IPC分类号： C23C16/455 , C23C16/52 , C23C16/505 , H01J37/32 , H01J21/02 , H01L21/02
摘要： Apparatuses for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the apparatuses, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.
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56.发明申请公开(公告)号：US20180308695A1
公开(公告)日：2018-10-25
申请号：US15955099
申请日：2018-04-17
发明人： Adrien LaVoie , Pulkit Agarwal , Purushottam Kumar
IPC分类号： H01L21/033 , H01L21/311 , H01L21/02 , H01J37/32
CPC分类号： H01L21/0338 , H01J37/32449 , H01J2237/332 , H01J2237/334 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/0228 , H01L21/0273 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Methods and apparatuses for patterning carbon-containing material over a layer to be etched are provided herein. Methods involve trimming carbon-containing material by atomic layer etching including exposing the carbon-containing material to an oxygen-containing gas without a plasma to modify a surface of the carbon-containing material and exposing the carbon-containing material to an inert gas and igniting a plasma to remove the modified surface of the carbon-containing material. Methods may be used for multiple patterning techniques such as double and quad patterning. Methods also include depositing a conformal film over a carbon-containing material patterned using atomic layer etching without breaking vacuum. The oxygen-containing gas may be one containing any one or more of oxygen, ozone, water vapor, nitrous oxide, carbon monoxide, formic acid vapor and/or carbon dioxide. The apparatus may include alternative energetic sources including 27 and/or 13 MHz capacitively coupled plasmas; and/or inductively coupled plasmas e.g., remote plasmas.
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公开(公告)号：US10037884B2
公开(公告)日：2018-07-31
申请号：US15253301
申请日：2016-08-31
发明人： Fung Suong Ou , Purushottam Kumar , Adrien LaVoie , Ishtak Karim , Jun Qian
IPC分类号： H01L21/311 , H01L21/02 , H01L21/3065
CPC分类号： H01L21/0228 , H01L21/02115 , H01L21/02266 , H01L21/02274 , H01L21/3065 , H01L21/31122 , H01L21/32
摘要： Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.
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公开(公告)号：US20180163302A1
公开(公告)日：2018-06-14
申请号：US15809767
申请日：2017-11-10
IPC分类号： C23C16/455 , C23C16/505 , C23C16/52 , H01J37/32 , H01L21/02
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45536 , C23C16/45538 , C23C16/505 , C23C16/52 , H01J37/32082 , H01J37/32155 , H01J37/32183 , H01J37/3244 , H01J37/32889 , H01J37/32899 , H01J37/32935 , H01J2237/3321 , H01L21/0262
摘要： Apparatuses for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the apparatuses, a RF power parameter may be adjusted during or prior to the deposition operation. Certain other implementations of the semiconductor deposition operations may include multiple different deposition processes with corresponding different recipes. The recipes may include different RF power parameters for each respective recipe. The respective recipes may adjust the RF power parameter prior to each deposition process. RF power frequency tuning may be utilized during each deposition process.
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公开(公告)号：US09997357B2
公开(公告)日：2018-06-12
申请号：US14194549
申请日：2014-02-28
发明人： Reza Arghavani , Samantha Tan , Bhadri N. Varadarajan , Adrien LaVoie , Ananda Banerji , Jun Qian , Shankar Swaminathan
IPC分类号： H01L21/223 , H01L21/22 , C23C16/52 , C23C16/455 , H01L21/67 , H01L21/225 , C23C16/04 , H01L29/66 , C23C16/50
CPC分类号： H01L21/223 , C23C16/045 , C23C16/45529 , C23C16/45544 , C23C16/50 , C23C16/52 , H01L21/2225 , H01L21/2252 , H01L21/67155 , H01L21/67207 , H01L29/66803
摘要： Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor. Also disclosed herein are multi-station substrate processing apparatuses for doping the fin-shaped channel regions of partially fabricated 3-D transistors.
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公开(公告)号：US20170323786A1
公开(公告)日：2017-11-09
申请号：US15654186
申请日：2017-07-19
发明人： Hu Kang , Shankar Swaminathan , Jun Qian , Wanki Kim , Dennis Hausmann , Bart J. van Schravendijk , Adrien LaVoie
IPC分类号： H01L21/02 , C23C16/34 , H01L21/762 , H01L21/67 , C23C16/04 , C23C16/56 , C23C16/455 , C23C16/40 , H01L21/768 , H01L21/285
CPC分类号： H01L21/02274 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02219 , H01L21/0228 , H01L21/28562 , H01L21/67201 , H01L21/76224 , H01L21/76229 , H01L21/76826 , H01L21/76837
摘要： Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.
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