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公开(公告)号：US20240240316A1
公开(公告)日：2024-07-18
申请号：US18622472
申请日：2024-03-29
发明人： Purushottam Kumar , Adrien LaVoie , Jun Qian , Hu Kang , Ishtak Karim , Fung Suong Ou
IPC分类号： C23C16/455 , C23C16/52 , H01L21/02 , H01L21/285
CPC分类号： C23C16/45527 , C23C16/45561 , C23C16/52 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要： Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.
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公开(公告)号：US10094018B2
公开(公告)日：2018-10-09
申请号：US14929073
申请日：2015-10-30
发明人： Purushottam Kumar , Adrien LaVoie , Jun Qian , Hu Kang , Ishtak Karim , Fung Suong Ou
IPC分类号： C23C16/455 , H01L21/285 , H01L21/02 , C23C16/52
摘要： Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.
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公开(公告)号：US20190024233A1
公开(公告)日：2019-01-24
申请号：US16137329
申请日：2018-09-20
发明人： Purushottam Kumar , Adrien LaVoie , Jun Qian , Hu Kang , Ishtak Karim , Fung Suong Ou
IPC分类号： C23C16/455 , H01L21/285 , H01L21/02 , C23C16/52
摘要： Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.
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公开(公告)号：US20180061628A1
公开(公告)日：2018-03-01
申请号：US15253301
申请日：2016-08-31
发明人： Fung Suong Ou , Purushottam Kumar , Adrien LaVoie , Ishtak Karim , Jun Qian
IPC分类号： H01L21/02 , H01L21/3065
CPC分类号： H01L21/0228 , H01L21/02266 , H01L21/02274 , H01L21/3065
摘要： Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.
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公开(公告)号：US20170362705A9
公开(公告)日：2017-12-21
申请号：US14929073
申请日：2015-10-30
发明人： Purushottam Kumar , Adrien LaVoie , Jun Qian , Hu Kang , Ishtak Karim , Fung Suong Ou
IPC分类号： C23C16/455 , H01L21/02 , C23C16/52 , H01L21/285
CPC分类号： C23C16/45527 , C23C16/45561 , C23C16/52 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要： Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.
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公开(公告)号：US20170096735A1
公开(公告)日：2017-04-06
申请号：US14929073
申请日：2015-10-30
发明人： Purushottam Kumar , Adrien LaVoie , Jun Qian , Hu Kang , Ishtak Karim , Fung Suong Ou
IPC分类号： C23C16/455 , H01L21/285 , H01L21/02
CPC分类号： C23C16/45527 , C23C16/45561 , C23C16/52 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要： Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.
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公开(公告)号：US11970772B2
公开(公告)日：2024-04-30
申请号：US17451534
申请日：2021-10-20
发明人： Purushottam Kumar , Adrien LaVoie , Jun Qian , Hu Kang , Ishtak Karim , Fung Suong Ou
IPC分类号： C23C16/455 , C23C16/52 , H01L21/02 , H01L21/285
CPC分类号： C23C16/45527 , C23C16/45561 , C23C16/52 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要： Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.
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公开(公告)号：US20220033967A1
公开(公告)日：2022-02-03
申请号：US17451534
申请日：2021-10-20
发明人： Purushottam Kumar , Adrien LaVoie , Jun Qian , Hu Kang , Ishtak Karim , Fung Suong Ou
IPC分类号： C23C16/455 , C23C16/52 , H01L21/02 , H01L21/285
摘要： Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.
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公开(公告)号：US11180850B2
公开(公告)日：2021-11-23
申请号：US16137329
申请日：2018-09-20
发明人： Purushottam Kumar , Adrien LaVoie , Jun Qian , Hu Kang , Ishtak Karim , Fung Suong Ou
IPC分类号： C23C16/455 , C23C16/52 , H01L21/02 , H01L21/285
摘要： Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.
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公开(公告)号：US10037884B2
公开(公告)日：2018-07-31
申请号：US15253301
申请日：2016-08-31
发明人： Fung Suong Ou , Purushottam Kumar , Adrien LaVoie , Ishtak Karim , Jun Qian
IPC分类号： H01L21/311 , H01L21/02 , H01L21/3065
CPC分类号： H01L21/0228 , H01L21/02115 , H01L21/02266 , H01L21/02274 , H01L21/3065 , H01L21/31122 , H01L21/32
摘要： Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.
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