公开(公告)号：US20080304328A1

公开(公告)日：2008-12-11

申请号：US12071451

申请日：2008-02-21

申请人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park ,  Jai-kwang Shin ,  Suk-pil Kim

发明人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park ,  Jai-kwang Shin ,  Suk-pil Kim

IPC分类号： G11C16/06 ,  H01L29/788

CPC分类号： G11C16/0416 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/0673 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

摘要： Example embodiments include nonvolatile memory devices that have good operation performance and may be made in a highly integrated structure, and methods of operating the same. Example embodiments of the nonvolatile memory devices include a substrate electrode, and a semiconductor channel layer on the substrate electrode, a floating gate electrode on the substrate electrode, wherein a portion of the floating gate electrode faces the semiconductor channel layer, a control gate electrode on the floating gate electrode, and wherein a distance between a portion of the floating gate electrode and the substrate electrode is smaller than a distance between the semiconductor channel layer and the substrate electrode wherein charge tunneling occurs.

摘要翻译： 示例性实施例包括具有良好操作性能并且可以以高度集成的结构制造的非易失性存储器件及其操作方法。 非易失性存储器件的示例性实施例包括衬底电极和衬底电极上的半导体沟道层，衬底电极上的浮置栅电极，其中浮置栅电极的一部分面向半导体沟道层，控制栅极电极 所述浮置栅极电极，并且其中所述浮置栅电极的一部分与所述基板电极之间的距离小于半导体沟道层与发生电荷隧道的基板电极之间的距离。

公开(公告)号：US20080303063A1

公开(公告)日：2008-12-11

申请号：US12005399

申请日：2007-12-27

申请人： Ki-ha Hong ,  Jae-woong Hyun ,  Young-gu Jin ,  Jai-kwang Shin

发明人： Ki-ha Hong ,  Jae-woong Hyun ,  Young-gu Jin ,  Jai-kwang Shin

IPC分类号： H01L29/778 ,  H01L21/336

CPC分类号： H01L27/108 ,  H01L27/10802 ,  H01L29/7841

摘要： Provided are a capacitorless DRAM and methods of manufacturing the same. The capacitorless DRAM may include a substrate including a source, a drain and a channel, a gate on the channel of the substrate, and a hole reserving unit below the channel.

摘要翻译： 提供了一种无电容器DRAM及其制造方法。 无电容器DRAM可以包括基板，包括源极，漏极和沟道，基板通道上的栅极，以及沟道下方的孔保留单元。

公开(公告)号：US08471640B2

公开(公告)日：2013-06-25

申请号：US13064627

申请日：2011-04-05

申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

IPC分类号： H03B17/00

CPC分类号： H03B15/006

摘要： Oscillators and methods of operating the oscillators are provided, the oscillators include an oscillating unit including at least one magnetic layer having a magnetization direction that varies according to at least one selected from the group consisting of an applied current, an applied voltage and an applied magnetic field. The oscillating unit is configured to generate an oscillation signal having a set frequency. The oscillators further include an output stage that provides an output signal by differentially amplifying the oscillation signal.

摘要翻译： 提供振荡器和操作振荡器的方法，振荡器包括振荡单元，该振荡单元包括至少一个具有磁化方向的磁性层，磁化方向根据从施加的电流，施加的电压和施加的磁体中选择的至少一个而变化 领域。 振荡单元被配置为产生具有设定频率的振荡信号。 振荡器还包括通过差分放大振荡信号来提供输出信号的输出级。

公开(公告)号：US08310014B2

公开(公告)日：2012-11-13

申请号：US13317734

申请日：2011-10-27

申请人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

发明人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

IPC分类号： H01L29/78

CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/02269 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78684

摘要： Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substrate disposed in a molecular beam epitaxy chamber at a temperature in a range of about 300° C. to about 500° C. and maintaining the chamber in vacuum of 10−11 Torr or less prior to performing an epitaxy process, and supplying a carbon source to the chamber to form a carbon insulating layer on the substrate. The carbon insulating layer is formed of diamond-like carbon and tetrahedral amorphous carbon.

公开(公告)号：US20120112796A1

公开(公告)日：2012-05-10

申请号：US13064627

申请日：2011-04-05

申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Jai-kwang Shin

IPC分类号： H03K5/01

CPC分类号： H03B15/006

摘要： Oscillators and methods of operating the oscillators are provided, the oscillators include an oscillating unit including at least one magnetic layer having a magnetization direction that varies according to at least one selected from the group consisting of an applied current, an applied voltage and an applied magnetic field. The oscillating unit is configured to generate an oscillation signal having a set frequency. The oscillators further include an output stage that provides an output signal by differentially amplifying the oscillation signal.

摘要翻译： 提供振荡器和操作振荡器的方法，振荡器包括振荡单元，该振荡单元包括至少一个具有磁化方向的磁性层，磁化方向根据从施加的电流，施加的电压和施加的磁体中选择的至少一个而变化 领域。 振荡单元被配置为产生具有设定频率的振荡信号。 振荡器还包括通过差分放大振荡信号来提供输出信号的输出级。

公开(公告)号：US20110068317A1

公开(公告)日：2011-03-24

申请号：US12926444

申请日：2010-11-18

申请人： Hyuk-soon Choi ,  Ji-hyun Hur ,  Yoon-ho Kang ,  Hyo-sug Lee ,  Jai-kwang Shin ,  Jae-joon Oh

发明人： Hyuk-soon Choi ,  Ji-hyun Hur ,  Yoon-ho Kang ,  Hyo-sug Lee ,  Jai-kwang Shin ,  Jae-joon Oh

IPC分类号： H01L45/00

CPC分类号： H01L45/1246 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  Y10T29/49002

摘要： A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.

摘要翻译： 相变存储器件包括开关器件和连接到开关器件的存储节点。 存储节点包括底部堆叠，设置在底部堆叠上的相变层和设置在相变层上的顶部堆叠。 相变层包括用于增加流过相变层的电流的路径并减小相变存储区的体积的单元。 与底部叠层相对设置的单元的表面的面积大于或等于与相变层接触的底部叠层的表面的面积。

公开(公告)号：US20080173859A1

公开(公告)日：2008-07-24

申请号：US12000716

申请日：2007-12-17

申请人： Ji-hyun Hur ,  Yoon-ho Khang ,  Hyo-sug Lee ,  Hyuk-soon Choi ,  Jai-kwang Shin ,  Jae-joon Oh

发明人： Ji-hyun Hur ,  Yoon-ho Khang ,  Hyo-sug Lee ,  Hyuk-soon Choi ,  Jai-kwang Shin ,  Jae-joon Oh

IPC分类号： H01L47/00

CPC分类号： G11C13/0004 ,  G11C11/5678 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/122 ,  H01L45/144 ,  H01L45/1675

摘要： A storage node, phase change memory device having a storage node, a method of fabricating the phase change memory device and a method of operating the phase change memory device are provided. The phase change memory device includes a switching device and a storage node connecting to the switching device. The storage node includes a bottom electrode, a phase change layer formed on the bottom electrode, a material layer formed on the phase change layer and a top electrode formed on the phase change layer around the material layer.

摘要翻译： 提供了具有存储节点的存储节点，相变存储器件，制造相变存储器件的方法和操作相变存储器件的方法。 相变存储器件包括连接到开关器件的开关器件和存储节点。 存储节点包括底电极，形成在底电极上的相变层，形成在相变层上的材料层和形成在材料层周围的相变层上的顶电极。

公开(公告)号：US07119489B2

公开(公告)日：2006-10-10

申请号：US10386940

申请日：2003-03-13

申请人： Jai-kwang Shin ,  Seong-gu Kim ,  Young-kyou Park ,  Hyeon-ill Um

发明人： Jai-kwang Shin ,  Seong-gu Kim ,  Young-kyou Park ,  Hyeon-ill Um

IPC分类号： H01J25/50

CPC分类号： H01J37/3408 ,  C23C14/35 ,  H01J9/236 ,  H01J23/10 ,  H01J37/3455

摘要： An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

公开(公告)号：US09525410B2

公开(公告)日：2016-12-20

申请号：US13588488

申请日：2012-08-17

申请人： Ho-jung Kim ,  Jai-kwang Shin ,  U-in Chung ,  Hyun-sik Choi

发明人： Ho-jung Kim ,  Jai-kwang Shin ,  U-in Chung ,  Hyun-sik Choi

IPC分类号： H03K17/687 ,  H02M1/08 ,  H02M3/337 ,  H01L29/778 ,  H01L29/16 ,  H01L29/20 ,  H01L21/82 ,  H01L21/8252

CPC分类号： H03K17/687 ,  H01L21/8213 ,  H01L21/8252 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7787 ,  H02M1/08 ,  H02M3/337 ,  H03K2217/0036 ,  H03K2217/0063 ,  H03K2217/0072 ,  H03K2217/0081

摘要： A power management chip and a power management device including the power management chip. The power management chip includes at least one power switch and a driver unit for generating a driving signal for driving the at least one power switch, the driver unit including one or more circuit units formed on a same substrate as the at least one power switch.

摘要翻译： 电源管理芯片和包括电源管理芯片的电源管理装置。 电源管理芯片包括至少一个电源开关和驱动器单元，用于产生用于驱动至少一个电源开关的驱动信号，所述驱动器单元包括形成在与所述至少一个电源开关相同的基板上的一个或多个电路单元。

公开(公告)号：US09048210B2

公开(公告)日：2015-06-02

申请号：US13550032

申请日：2012-07-16

申请人： Hyung-su Jeong ,  Jai-kwang Shin ,  Nam-young Lee ,  Ji-hoon Lee ,  Min-kwon Cho ,  Yong-cheol Choi ,  Hyuk-soon Choi

发明人： Hyung-su Jeong ,  Jai-kwang Shin ,  Nam-young Lee ,  Ji-hoon Lee ,  Min-kwon Cho ,  Yong-cheol Choi ,  Hyuk-soon Choi

IPC分类号： H01L29/36 ,  H01L29/66 ,  H01L29/739

CPC分类号： H01L29/36 ,  H01L29/6634 ,  H01L29/7397

摘要： A transistor includes a device portion and a collector layer. The device portion is in a first side of a semiconductor substrate, and includes a gate and an emitter. The collector layer is on a second side of the semiconductor substrate, which is opposite to the first side. The collector layer is an impurity-doped epitaxial layer and has a doping profile with a non-normal distribution.

摘要翻译： 晶体管包括器件部分和集电极层。 器件部分位于半导体衬底的第一侧，并且包括栅极和发射极。 集电极层位于半导体衬底的与第一侧相对的第二侧上。 集电极层是杂质掺杂的外延层，并具有非正态分布的掺杂分布。