公开(公告)号：US20200328066A1

公开(公告)日：2020-10-15

申请号：US16829573

申请日：2020-03-25

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Dong Hyung LEE ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Irfan JAMIL ,  Pyeong Youn ROH ,  Jun MA ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/44 ,  C23C16/455

Abstract: A system and method for forming a film includes generating a plasma in a processing volume of a processing chamber to form the film on a substrate. The processing chamber may include a gas distributor configured to generate the plasma in the processing volume. Further, a barrier gas is provided into the processing volume to form a gas curtain around a plasma located in the processing volume. The barrier gas is supplied by a gas supply source through an inlet port disposed along a first side of the processing chamber. Further, an exhaust port is disposed along the first side of the processing chamber and the plasma and the barrier gas is purged via the exhaust port.

公开(公告)号：US20200251311A1

公开(公告)日：2020-08-06

申请号：US16855126

申请日：2020-04-22

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

IPC: H01J37/32 ,  H01L21/67

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US20200216952A1

公开(公告)日：2020-07-09

申请号：US16685340

申请日：2019-11-15

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  David BLAHNIK ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN

IPC: C23C16/44

Abstract: The present disclosure relates to pumping devices, components thereof, and methods associated therewith for substrate processing chambers. In one example, a pumping ring for substrate processing chambers includes a body. The body includes an upper wall, a lower wall, an inner radial wall, and an outer radial wall. The pumping ring also includes an annulus defined by the upper wall, the lower wall, the inner radial wall, and the outer radial wall. The pumping ring also includes a first exhaust port in the body that is fluidly coupled to the annulus, and a second exhaust port in the body that is fluidly coupled to the annulus. The pumping ring also includes a first baffle disposed in the annulus adjacent to the first exhaust port, and a second baffle disposed in the annulus adjacent to the second exhaust port.

公开(公告)号：US20180066364A1

公开(公告)日：2018-03-08

申请号：US15802496

申请日：2017-11-03

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  H01L21/687 ,  G01B11/06 ,  H01L21/67 ,  G01N21/55 ,  G01N21/65 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455 ,  C23C16/509 ,  H01L21/00

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20170309528A1

公开(公告)日：2017-10-26

申请号：US15136611

申请日：2016-04-22

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Karthik JANAKIRAMAN ,  Tuan Anh NGUYEN

IPC: H01L21/66 ,  H01L21/285 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L22/26 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/4583 ,  C23C16/52 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/67253 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68785 ,  H01L22/12

Abstract: The implementations described herein generally relate to the dynamic, real-time control of the process spacing between a substrate support and a gas distribution medium during a deposition process. Multiple dimensional degrees of freedom are utilized to change the angle and spacing of the substrate plane with respect to the gas distributing medium at any time during the deposition process. As such, the substrate and/or substrate support may be leveled, tilted, swiveled, wobbled, and/or moved during the deposition process to achieve improved film uniformity. Furthermore, the independent tuning of each layer may be had due to continuous variations in the leveling of the substrate plane with respect to the showerhead to average effective deposition on the substrate, thus improving overall stack deposition performance.

公开(公告)号：US20170162385A1

公开(公告)日：2017-06-08

申请号：US15435189

申请日：2017-02-16

Applicant: Applied Materials, Inc.

Inventor： Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Ramprakash SANKARAKRISHNAN ,  Robert KIM ,  Dale R. DU BOIS ,  Kirby H. FLOYD ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687 ,  C23C16/458 ,  C23C16/505

CPC classification number: H01L21/02274 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32743 ,  H01J2237/3321 ,  H01L21/67103 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68792

Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.

公开(公告)号：US20160358804A1

公开(公告)日：2016-12-08

申请号：US15166328

申请日：2016-05-27

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Abdul Aziz KHAJA ,  Zheng John YE ,  Amit Kumar BANSAL

IPC: H01L21/683 ,  H01J37/32 ,  C23C16/458 ,  C23C16/30 ,  C23C16/505

CPC classification number: H01J37/32477 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/347 ,  C23C16/36 ,  C23C16/4404 ,  C23C16/4586 ,  C23C16/5096 ,  H01J37/32082 ,  H01L21/6831

Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.

Abstract translation: 本公开总体上涉及具有渐变组成的处理室调味层。 在一个实例中，调味层是硼碳氮化物（BCN）膜。 BCN膜可以在膜的底部具有更大的硼组成。 当BCN膜沉积时，硼浓度可能接近零，而相对碳氮浓度增加。 可以通过最初共同流动硼前体，碳前体和氮前体来沉积BCN膜。 在第一时间段之后，可以减少硼前体的流速。 当硼前体的流速减小时，可以施加RF功率以在调节层的沉积期间产生等离子体。

公开(公告)号：US20160222507A1

公开(公告)日：2016-08-04

申请号：US15016870

申请日：2016-02-05

Applicant: Applied Materials, Inc.

Inventor： Juan Carlos ROCHA-ALVAREZ ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN

IPC: C23C16/44 ,  C23C16/455 ,  F16L53/00 ,  F27D7/02 ,  F27D7/06

CPC classification number: C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  F27D7/02 ,  F27D7/06 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/3321 ,  Y10T137/6416

Abstract: A processing chamber is described having a gas evacuation flow path from the center to the edge of the chamber. Purge gas is introduced at an opening around a support shaft that supports a heater plate. A shaft wall around the opening directs the purge gas along the support shaft to an evacuation plenum. Gas flows from the evacuation plenum through an opening in a second plate near the shaft wall and along the chamber bottom to an opening coupled to a vacuum source. Purge gas is also directed to the slit valve.

Abstract translation: 描述了具有从腔室的中心到边缘的气体排出流动路径的处理室。 吹扫气体被引入支撑加热板的支撑轴周围的开口处。 围绕开口的轴壁将吹扫气体沿支撑轴引导到排气室。 气体从排气室经过位于轴壁附近的第二板的开口并且沿着室底部流到耦合到真空源的开口。 吹扫气体也被引导到狭缝阀。

公开(公告)号：US20160017497A1

公开(公告)日：2016-01-21

申请号：US14869371

申请日：2015-09-29

Applicant: Applied Materials, Inc.

Inventor： NAGARAJAN RAJAGOPALAN ,  Xinhai HAN ,  Michael TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  C23C16/46 ,  C23C16/509 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract translation: 描述了根据PECVD工艺处理衬底的方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。

公开(公告)号：US20150380217A1

公开(公告)日：2015-12-31

申请号：US14766666

申请日：2014-03-06

Applicant: Applied Materials, Inc.

Inventor： Juan Carlos ROCHA-ALVAREZ ,  Dale R. DU BOIS ,  Amit Kumar BANSAL

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/46 ,  C23C16/50

CPC classification number: H01J37/32458 ,  C23C16/45587 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/54 ,  H01J37/32449 ,  H01J37/3288 ,  H01J2237/3321

Abstract: Embodiments described herein provide an apparatus for improving deposition uniformity by improving plasma profile using a tri-cut chamber liner. The apparatus also includes a lid assembly having a split process stack for reducing downtime and a bottom heater support for more efficient heating of chamber walls.

Abstract translation: 本文描述的实施例提供了一种通过使用三切室衬套改进等离子体轮廓来改善沉积均匀性的装置。 该装置还包括具有用于减少停机时间的分离过程堆叠和用于更有效地加热室壁的底部加热器支撑件的盖组件。