Method for coating an integrated circuit substrate
    41.
    发明授权
    Method for coating an integrated circuit substrate 失效
    涂覆集成电路基板的方法

    公开(公告)号:US06379744B1

    公开(公告)日:2002-04-30

    申请号:US08590042

    申请日:1996-02-05

    IPC分类号: B05D512

    CPC分类号: B05D1/005 B05D7/542 G03F7/162

    摘要: An integrated circuit substrate (10) is uniformly coated with a defect free layer of material (18), while minimizing the volume of material (18) dispensed on to the integrated circuit substrate (10). In one embodiment a first predetermined quantity of material (18) is dispensed on to the integrated circuit substrate (10) while the integrated circuit substrate (10) is not spinning. After the first predetermined quantity of material (18) is dispensed the integrated circuit substrate (10) is radially accelerated to a first predetermined spin speed. A second predetermined quantity of the material (18) is then dispensed on to the first predetermined quantity of material (18), while the integrated circuit substrate (10) is spinning. After the second predetermined quantity of material (18) is dispensed the integrated circuit substrate (10) is radially accelerated to a second predetermined spin speed.

    摘要翻译: 集成电路基板(10)被均匀地涂覆有无缺陷材料层(18),同时最小化分配到集成电路基板(10)上的材料(18)的体积。 在一个实施例中,当集成电路基板(10)不旋转时,第一预定量的材料(18)被分配到集成电路基板(10)上。 在分配第一预定量的材料(18)之后,集成电路基板(10)径向加速到第一预定旋转速度。 然后,当集成电路基板(10)旋转时,第二预定量的材料(18)被分配到第一预定量的材料(18)上。 在第二预定量的材料(18)被分配之后,集成电路衬底(10)被径向加速到第二预定旋转速度。

    Methods of transforming a material to form an insulating material between components of an integrated circuit
    42.
    发明授权
    Methods of transforming a material to form an insulating material between components of an integrated circuit 失效
    在集成电路的组件之间转换材料以形成绝缘材料的方法

    公开(公告)号:US06355299B1

    公开(公告)日:2002-03-12

    申请号:US09676420

    申请日:2000-09-29

    IPC分类号: B05D512

    摘要: The invention encompasses methods of forming insulating materials proximate conductive elements. In one aspect, the invention includes a method of forming an insulating material proximate a substrate comprising: a) chemical vapor depositing a first material proximate a substrate; b) forming cavities within the first material; and c) after forming cavities within the first material, transforming at least some of the first material into an insulative second material. In another aspect, the invention includes a method of forming an insulating material proximate a substrate comprising: a) forming porous polysilicon proximate a substrate; and b) transforming at least some of the porous polysilicon into porous silicon dioxide. In yet another aspect, the invention includes a method of forming an insulating material between components of an integrated circuit comprising: a) chemical vapor depositing polysilicon between two components; b) electrochemical anodization of the polysilicon to convert the polysilicon into a porous mass having a first volume, the first volume comprising a polysilicon volume and a cavity volume, the cavity volume comprising greater than or equal to about 75% of said first volume; and c) oxidizing the porous polysilicon mass to transform the polysilicon into porous silicon dioxide having a second volume, the second volume comprising a silicon dioxide volume and a cavity volume, the cavity volume comprising less than or equal to about 50% of said second volume.

    摘要翻译: 本发明包括在导电元件附近形成绝缘材料的方法。 一方面,本发明包括一种在衬底附近形成绝缘材料的方法,包括:a)化学气相沉积靠近衬底的第一材料; b)在第一材料内形成空腔; 以及c)在所述第一材料中形成空腔之后,将所述第一材料中的至少一些转化为绝缘的第二材料。 在另一方面,本发明包括一种在衬底附近形成绝缘材料的方法,包括:a)在衬底附近形成多孔多晶硅; 和b)将多孔多晶硅中的至少一些转化为多孔二氧化硅。 在另一方面,本发明包括在集成电路的部件之间形成绝缘材料的方法,包括:a)在两个部件之间化学气相沉积多晶硅; b)多晶硅的电化学阳极氧化以将多晶硅转化为具有第一体积的多孔质量体,所述第一体积包含多晶硅体积和腔体积,所述空腔体积包含大于或等于所述第一体积的约75%; 以及c)氧化所述多孔多晶硅质量以将所述多晶硅转化为具有第二体积的多孔二氧化硅,所述第二体积包含二氧化硅体积和空腔体积,所述空腔体积包含小于或等于所述第二体积的约50% 。

    Ferroelectric element and process for producing the same
    43.
    发明授权
    Ferroelectric element and process for producing the same 失效
    铁电元件及其制造方法

    公开(公告)号:US06350486B2

    公开(公告)日:2002-02-26

    申请号:US09432231

    申请日:1999-11-03

    IPC分类号: B05D512

    摘要: A ferroelectric element comprising a ferroelectric material containing at least two metals, the ferroelectric element having been produced by a process including a sol-gel process in the presence of a thickener and/or an association preventive from aqueous solutions of respective salts of the metals. The ferroelectric element is advantageous in that the handling of starting compounds and the production of the ferroelectric element are easy, the storage stability of the starting compound solution is good, the cost is low, the ferroelectric element can be formed as a thin layer, particles on the surface of the thin layer are fine and dense, and, hence, the surface smoothness is good. The ferroelectric element is excellent also in piezoelectric properties and therefore can be advantageously used as a piezoelectric element in a piezoelectric ink jet head.

    摘要翻译: 一种铁电体元件,其包含含有至少两种金属的铁电材料,所述铁电体元件是通过包括溶胶 - 凝胶法在增稠剂存在下和/或与金属的各种盐的水溶液缔合防止的方法制备的。 铁电元件的优点在于,起始化合物的处理和铁电体元素的制备容易,起始化合物溶液的储存稳定性好,成本低,铁电元件可以形成为薄层,颗粒 薄层表面细致密集,表面光洁度好。 铁电体元件在压电性能方面也是优异的,因此可以有利地用作压电喷墨头中的压电元件。

    Method of manufacturing a ferrite magnetic film structure having magnetic anisotropy
    46.
    发明授权
    Method of manufacturing a ferrite magnetic film structure having magnetic anisotropy 失效
    具有磁各向异性的铁氧体磁性膜结构体的制造方法

    公开(公告)号:US06335050B1

    公开(公告)日:2002-01-01

    申请号:US09594551

    申请日:2000-06-15

    申请人: Tetsuo Inoue

    发明人: Tetsuo Inoue

    IPC分类号: B05D512

    摘要: A ferrite magnetic film structure exhibiting a magnetic anisotropy, the ferrite magnetic film structure comprising, a substrate provided on one main surface thereof with a groove-like recessed portion and with a ridge-like projected portion located neighboring to the groove-like recessed portion, and a ferrite magnetic film constituted by a continuous film having a substantially flat upper surface and formed on one main surface of the substrate, wherein the ferrite magnetic film structure meets the following conditions: (a/(a+b))(h/(t−h))≧0.047 1≧(a+b) where “a” is a width of the ridge-like projected portion, b is a width of the groove-like recessed portion, h is a height of step between the groove-like recessed portion and the ridge-like projected portion, t is a thickness of the ferrite magnetic film at the recessed portion, and l is a length of the recessed portion and of the projected portion.

    摘要翻译: 一种表现出磁各向异性的铁氧体磁性膜结构,所述铁氧体磁性膜结构包括:在其一个主表面上设置有凹槽状凹部的基板和与所述凹槽部分相邻的脊状突起部, 铁氧体磁性膜由具有基本上平坦的上表面的连续膜构成,并形成在基板的一个主表面上,其中铁氧体磁膜结构满足以下条件:其中“a”是脊状投影的宽度 部分b是槽状凹部的宽度,h是槽状凹部与脊状突出部之间的台阶高度,t是凹部的铁氧体磁膜的厚度, l是凹部和突出部的长度。

    Process for producing a casing providing a screen against electromagnetic radiation

    公开(公告)号:US06329014B1

    公开(公告)日:2001-12-11

    申请号:US09393907

    申请日:1999-03-10

    IPC分类号: B05D512

    CPC分类号: H05K9/0015

    摘要: A process for producing a casing acting as a screen against electromagnetic radiation, more particularly intended for electronic operational elements, comprising a screening profile arranged in a predetermined portion of at least one part of the casing, said screening profile being made of elastic, conductive material, the elastic, conductive material being applied, by means of pressure from a needle or nozzle, directly onto the portion of the casing part, on which the screening profile is to be arranged, and a casing produced according to said process.