IMAGING DEVICE, OPERATION METHOD THEREOF, AND ELECTRONIC DEVICE

    公开(公告)号:US20230247331A1

    公开(公告)日:2023-08-03

    申请号:US17768972

    申请日:2020-10-27

    摘要: An imaging device with low power consumption is provided. A pixel includes a first circuit and a second circuit. The first circuit can generate imaging data and retain difference data that is a difference between the imaging data and data obtained in an initial frame. The second circuit includes a circuit that compares the difference data and a voltage range set arbitrarily. The second circuit supplies a reading signal based on the comparison result. With the use of the structure, reading from the pixel is not performed when it is determined that the difference data is within the set voltage range and reading from the pixel can be performed when it is determined that the difference data is outside the voltage range.

    Organic optoelectronic device
    45.
    发明授权

    公开(公告)号:US11716864B2

    公开(公告)日:2023-08-01

    申请号:US16920555

    申请日:2020-07-03

    摘要: An organic optoelectronic device comprises a substrate having first and second regions, a first electrode positioned over the first region of the substrate, a shutter electrode positioned over the second region of the substrate, an organic heterojunction layer comprising an organic heterojunction material, positioned over at least a portion of the first electrode, an insulator layer positioned over at least a portion of the shutter electrode, an organic channel layer, comprising an organic channel material, positioned over at least a portion of the heterojunction and insulator layers, and a second electrode positioned over the channel layer in the second region of the substrate, wherein the shutter electrode is configured to generate a repulsive potential barrier in the channel layer, suitable to at least reduce movement of charge in the channel layer. A method of measuring received light in an optoelectronic device is also described.

    Photoelectric conversion element, measuring method of the same, solid-state imaging device, electronic device, and solar cell

    公开(公告)号:US11711931B2

    公开(公告)日:2023-07-25

    申请号:US17445645

    申请日:2021-08-23

    摘要: The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.