公开(公告)号：US06328871B1

公开(公告)日：2001-12-11

申请号：US09375167

申请日：1999-08-16

申请人： Peijun Ding ,  Tony Chiang ,  Tse-Yong Yao ,  Barry Chin

发明人： Peijun Ding ,  Tony Chiang ,  Tse-Yong Yao ,  Barry Chin

IPC分类号： C23C2800

CPC分类号： H01L21/76846 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877

摘要： The invention generally provides a method for preparing a surface for electrochemical deposition comprising forming a high conductance barrier layer on the surface and depositing a seed layer over the high conductance barrier layer. Another aspect of the invention provides a method for filling a structure on a substrate, comprising depositing a high conductance barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, and electrochemically depositing a metal to fill the structure.

摘要翻译： 本发明通常提供了一种用于制备用于电化学沉积的表面的方法，其包括在表面上形成高导电阻挡层并在高导电阻挡层上沉积种子层。 本发明的另一方面提供了一种用于在基板上填充结构的方法，包括在所述结构的一个或多个表面上沉积高电导阻挡层，在所述阻挡层上沉积晶种层，以及电化学沉积金属以填充所述结构 。

公开(公告)号：US08652259B2

公开(公告)日：2014-02-18

申请号：US12355463

申请日：2009-01-16

申请人： Steve Poppe ,  Yan Rozenzon ,  David Z. Chen ,  Xiaole Yan ,  Peijun Ding ,  Zheng Xu

发明人： Steve Poppe ,  Yan Rozenzon ,  David Z. Chen ,  Xiaole Yan ,  Peijun Ding ,  Zheng Xu

IPC分类号： C23C16/00

CPC分类号： C23C16/4587 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/54 ,  C30B25/105 ,  C30B25/12 ,  C30B25/165

摘要： One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.

摘要翻译： 一个实施例提供了用于材料沉积的装置。 该装置包括反应室和一对基座。 每个感受体具有前侧和后侧，并且前侧安装基板。 感应器垂直定位，使得基座的前侧彼此面对，并且基座的垂直边缘彼此接触，从而在基板之间形成基本封闭的窄通道。 该装置还包括多个用于注入反应气体的气体喷嘴。 气体喷嘴被控制成使得室内的气体流动方向可以交替，从而有利于均匀的材料沉积。 该装置包括位于反应室外部的多个加热单元。 加热单元以这样的方式布置，使得它们将热能直接辐射到基座的背面。

公开(公告)号：US20130256129A1

公开(公告)日：2013-10-03

申请号：US13876133

申请日：2010-12-22

申请人： Peng Chen ,  Mengxin Zhao ,  Gang Wei ,  Liang Zhang ,  Bai Yang ,  Guilong Wu ,  Peijun Ding

发明人： Peng Chen ,  Mengxin Zhao ,  Gang Wei ,  Liang Zhang ,  Bai Yang ,  Guilong Wu ,  Peijun Ding

IPC分类号： C23C14/35

摘要： A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.

摘要翻译： 等离子体处理装置包括在室（20）上方的室（20）和目标（25）。 靶（25）的表面与腔室（20）的处理区域接触。 所述腔室（20）包括叠置的绝缘子室（21）和第一导电子室（22）。 第一导电子室（22）设置在绝缘子室（21）的下方。 绝缘子室（21）由绝缘材料制成，第一导电子室（22）由金属材料制成。 在绝缘子室（21）中设置由金属材料制成的法拉第屏蔽部件（10）或电镀有导电涂层并且包括至少一个狭缝的绝缘材料。 电感线圈（13）围绕绝缘子室（21）的外部。 通过使用等离子体处理装置可以解决由于在溅射过程中在线圈表面上形成的颗粒导致的晶片污染的问题。

公开(公告)号：US08500963B2

公开(公告)日：2013-08-06

申请号：US11778648

申请日：2007-07-17

申请人： Mengqi Ye ,  Keith A. Miller ,  Peijun Ding ,  Goichi Yoshidome ,  Rong Tao

发明人： Mengqi Ye ,  Keith A. Miller ,  Peijun Ding ,  Goichi Yoshidome ,  Rong Tao

IPC分类号： C23C14/35

CPC分类号： C23C14/0623 ,  C23C14/351 ,  C23C14/541

摘要： A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which the material deposits in either an amorphous or crystalline form. GST has a low-temperature amorphous range and a high-temperature crystalline range separated by a transition band of 105-120° C. Bipolar pulsed sputtering with less than 50% positive pulses of less than 10:s pulse width cleans the target while maintain the sputtering plasma. The temperature of chamber shields is maintained at a temperature favoring crystalline deposition or they may be coated with arc-spray aluminum or with crystallographically aligned copper or aluminum.

摘要翻译： 用于形成相变存储器的金属硫族化物的等离子体溅射方法，例如锗锑碲化物（GST）。 将基材保持在选定的温度，在该温度下，材料以无定形或结晶形式沉积。 GST具有低温无定形范围和105-120°C的过渡带隔离的高温结晶范围。具有小于10s脉冲宽度的小于50％正脉冲的双极脉冲溅射清洁目标，同时保持 溅射等离子体。 室屏蔽的温度保持在有利于结晶沉积的温度下，或者它们可以用电弧喷涂铝或用结晶取向的铜或铝涂覆。

公开(公告)号：US07884032B2

公开(公告)日：2011-02-08

申请号：US11260899

申请日：2005-10-28

申请人： Mengqi Ye ,  Peijun Ding ,  Hougong Wang ,  Zhendong Liu

发明人： Mengqi Ye ,  Peijun Ding ,  Hougong Wang ,  Zhendong Liu

IPC分类号： H01L21/469

CPC分类号： H01L21/02046 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28017 ,  H01L21/2855

摘要： A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers can include both an insulative layer of one or more insulative films, and a conductive metal layer of one or more conductive metal layer films. In another aspect, a bias signal of positive and negative voltage pulses may be applied to a target of a deposition chamber to facilitate deposition of the target material in a suitable fashion. In yet another aspect, one or more of the deposition chambers may have associated therewith a pump which combines a turbomolecular pump and a cryogenic pump to generate an ultra high vacuum in that chamber. Other features are described and claimed.

摘要翻译： 一种系统，方法和装置能够在衬底上彼此层叠各种材料层，而不会使衬底暴露于周围空气的压力和污染物直到堆叠完成。 在一个方面，层叠层可以包括一个或多个绝缘膜的绝缘层和一个或多个导电金属层膜的导电金属层。 在另一方面，可以将正电压脉冲和负电压脉冲的偏置信号施加到沉积室的靶，以便以合适的方式沉积目标材料。 在另一方面，一个或多个沉积室可以具有与其结合的泵，其将涡轮分子泵和低温泵组合以在该室中产生超高真空。 描述和要求保护其他特征。

公开(公告)号：US20100300506A1

公开(公告)日：2010-12-02

申请号：US12476991

申请日：2009-06-02

申请人： Jiunn Benjamin Heng ,  Chentao Yu ,  Zheng Xu ,  Jianming Fu ,  Peijun Ding

发明人： Jiunn Benjamin Heng ,  Chentao Yu ,  Zheng Xu ,  Jianming Fu ,  Peijun Ding

IPC分类号： H01L31/042 ,  H01L31/00 ,  H01L31/18

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/0508 ,  H01L31/0725 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

摘要翻译： 本发明的一个实施例提供了一种双面异质结太阳能电池模块。 太阳能电池包括前侧玻璃罩，位于前侧玻璃罩下方的背面玻璃罩以及位于前侧玻璃罩和后侧玻璃罩之间的多个太阳能电池。 每个太阳能电池包括位于前侧玻璃盖下方的半导体多层结构，包括：前侧电极栅格，位于前侧电极下方的第一层重掺杂非晶Si（a-Si），轻掺杂晶体Si c-Si），以及位于轻掺杂的c-Si层下方的重掺杂c-Si层。 太阳能电池还包括位于多层结构下方的第二层重掺杂a-Si层; 以及位于重掺杂a-Si的第二层下方的背面电极。

公开(公告)号：US20070095650A1

公开(公告)日：2007-05-03

申请号：US11262193

申请日：2005-10-28

申请人： Mengqi Ye ,  Zhendong Liu ,  Peijun Ding

发明人： Mengqi Ye ,  Zhendong Liu ,  Peijun Ding

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/35 ,  C23C14/225 ,  C23C14/505 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3455

摘要： Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

摘要翻译： 在一个实施例中，在物理气相沉积（PVD）室中的溅射可以利用相对于衬底的横向偏移和倾斜的目标。 另一方面，可以减小目标功率以增强膜保护。 在另一方面，磁控管磁体可以相对较强并且平衡良好以增强膜保护。 在另一方面，可以提供快门以在启动条件下保护基板。 描述和要求保护其他实施例。

公开(公告)号：US20060030151A1

公开(公告)日：2006-02-09

申请号：US10915139

申请日：2004-08-09

申请人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael Miller ,  Jianming Fu ,  Jick Yu ,  Zheng Xu ,  Fusen Chen

发明人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael Miller ,  Jianming Fu ,  Jick Yu ,  Zheng Xu ,  Fusen Chen

IPC分类号： H01L21/4763

CPC分类号： H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

摘要翻译： 一种用于铜或铝种子层的集成溅射方法和反应器，其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。 在种子沉积之后，使用相同的溅射反应器以能量足够低的能量的能量轻离子（特别是氦）溅射蚀刻衬底，以使其能够将金属化选择性地蚀刻到较重的下层阻挡层，例如钽或铝上的铜 超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体，同时关闭目标电源。 在铜电化学镀以填充孔之前，最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。 本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。

公开(公告)号：US20050133365A1

公开(公告)日：2005-06-23

申请号：US10942273

申请日：2004-09-16

申请人： Ilyoung Hong ,  Donny Young ,  Michael Rosenstein ,  Robert Lowrance ,  Daniel Lubben ,  Michael Miller ,  Peijun Ding ,  Sreekrishnan Sankaranarayan ,  Goichi Yoshidome

发明人： Ilyoung Hong ,  Donny Young ,  Michael Rosenstein ,  Robert Lowrance ,  Daniel Lubben ,  Michael Miller ,  Peijun Ding ,  Sreekrishnan Sankaranarayan ,  Goichi Yoshidome

IPC分类号： C23C14/32 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3455

摘要： A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

摘要翻译： 用于等离子体溅射反应器中的磁控管的升降机构和相应的使用。 围绕目标轴旋转的磁控管被可控地从目标的背面提升，以补偿溅射侵蚀，从而在溅射表面保持恒定的磁场和合成的等离子体密度，这对于使用小的磁控管的稳定操作特别重要， 例如，一个执行关于目标轴的圆形或行星运动。 升降机构可以包括轴向固定到磁控管支撑轴的导螺杆和与其接合的导螺母，以在导螺母转动时升高磁控管。 或者，支撑轴轴向固定到垂直移动的滑块。 可以根据基于施加到目标的累积功率的配方或通过监视目标的电气特性来控制升力量。

公开(公告)号：US06580057B2

公开(公告)日：2003-06-17

申请号：US10016350

申请日：2001-12-10

申请人： Richard Hong ,  James H. Tsung ,  Gunnar Vatvedt ,  Peijun Ding ,  Arvind Sundarrajan

发明人： Richard Hong ,  James H. Tsung ,  Gunnar Vatvedt ,  Peijun Ding ,  Arvind Sundarrajan

IPC分类号： H05B368

CPC分类号： H01L21/67103

摘要： The present invention generally provides a substrate processing system having a thermally conductive and electrically insulative member coupled to a heated member that provides for heat dissipation from the heated member. In a preferred embodiment, the present invention provides for heat dissipation through thermal conductance of an electrically insulated coil in an IMP reaction chamber.