公开(公告)号：US07294574B2

公开(公告)日：2007-11-13

申请号：US10915139

申请日：2004-08-09

申请人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael A. Miller ,  Jianming Fu ,  Jick M. Yu ,  Zheng Xu ,  Fusen Chen

发明人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael A. Miller ,  Jianming Fu ,  Jick M. Yu ,  Zheng Xu ,  Fusen Chen

IPC分类号： H01L21/44

CPC分类号： H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

摘要翻译： 一种用于铜或铝种子层的集成溅射方法和反应器，其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。 在种子沉积之后，使用相同的溅射反应器以能量足够低的能量的能量轻离子（特别是氦）溅射蚀刻衬底，以使其能够将金属化选择性地蚀刻到较重的下层阻挡层，例如钽或铝上的铜 超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体，同时关闭目标电源。 在铜电化学镀以填充孔之前，最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。 本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。

公开(公告)号：US20050133361A1

公开(公告)日：2005-06-23

申请号：US10942358

申请日：2004-09-16

申请人： Peijun Ding ,  Daniel Lubben ,  Ilyoung Hong ,  Michael Miller ,  Hsien-Lung Yang ,  Suraj Rengarajan ,  Arvind Sundarrajan ,  Goichi Yoshidome

发明人： Peijun Ding ,  Daniel Lubben ,  Ilyoung Hong ,  Michael Miller ,  Hsien-Lung Yang ,  Suraj Rengarajan ,  Arvind Sundarrajan ,  Goichi Yoshidome

IPC分类号： C23C14/32 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3455

摘要： A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

摘要翻译： 用于等离子体溅射反应器中的磁控管的升降机构和相应的使用。 围绕目标轴旋转的磁控管被可控地从目标的背面提升，以补偿溅射侵蚀，从而在溅射表面保持恒定的磁场和合成的等离子体密度，这对于使用小的磁控管的稳定操作特别重要， 例如，一个执行关于目标轴的圆形或行星运动。 升降机构可以包括轴向固定到磁控管支撑轴的导螺杆和与其接合的导螺母，以在导螺母转动时升高磁控管。 或者，支撑轴轴向固定到垂直移动的滑块。 可以根据基于施加到目标的累积功率的配方或通过监视目标的电气特性来控制升力量。

公开(公告)号：US20060030151A1

公开(公告)日：2006-02-09

申请号：US10915139

申请日：2004-08-09

申请人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael Miller ,  Jianming Fu ,  Jick Yu ,  Zheng Xu ,  Fusen Chen

发明人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael Miller ,  Jianming Fu ,  Jick Yu ,  Zheng Xu ,  Fusen Chen

IPC分类号： H01L21/4763

CPC分类号： H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

摘要翻译： 一种用于铜或铝种子层的集成溅射方法和反应器，其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。 在种子沉积之后，使用相同的溅射反应器以能量足够低的能量的能量轻离子（特别是氦）溅射蚀刻衬底，以使其能够将金属化选择性地蚀刻到较重的下层阻挡层，例如钽或铝上的铜 超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体，同时关闭目标电源。 在铜电化学镀以填充孔之前，最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。 本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。