公开(公告)号：US20200266153A1

公开(公告)日：2020-08-20

申请号：US16866033

申请日：2020-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Seunggeol NAM ,  Yeonchoo CHO ,  Seongjun PARK ,  Hyeonjin SHIN ,  Jaeho LEE

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US20190294047A1

公开(公告)日：2019-09-26

申请号：US16426046

申请日：2019-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun PARK ,  Yeonchoo CHO

IPC: G03F7/11 ,  G03F7/36 ,  G03F7/09 ,  G03F7/16

Abstract: A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.

公开(公告)号：US20190157212A1

公开(公告)日：2019-05-23

申请号：US16257189

申请日：2019-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Seunggeol NAM ,  Yeonchoo CHO ,  Seongjun PARK ,  Hyeonjin SHIN ,  Jaeho LEE

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53209 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5226

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US20180358470A1

公开(公告)日：2018-12-13

申请号：US15892850

申请日：2018-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Haeryong KIM ,  Sanghyun JO ,  Hyeonjin SHIN

IPC: H01L29/788 ,  H01L29/423 ,  H01L29/49 ,  H01L27/11521 ,  G11C11/54 ,  G11C11/56

CPC classification number: H01L29/7887 ,  B82Y10/00 ,  G11C11/54 ,  G11C11/56 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C13/025 ,  G11C16/0441 ,  G11C16/10 ,  G11C16/26 ,  G11C2211/5612 ,  G11C2213/35 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/0673 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/49 ,  H01L29/78684 ,  H01L29/78687

Abstract: Provided are nonvolatile memory devices including 2-dimensional (2D) material and apparatuses including the nonvolatile memory devices. A nonvolatile memory device may include a storage stack including a plurality of charge storage layers between a channel element and a gate electrode facing the channel element. The plurality of charge storage layers may include a 2D material. An interlayer barrier layer may be further provided between the plurality of charge storage layers. The nonvolatile memory device may have a multi-bit or multi-level memory characteristic due to the plurality of charge storage layers.

公开(公告)号：US20180190800A1

公开(公告)日：2018-07-05

申请号：US15904967

申请日：2018-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungeun BYUN ,  Jisoo KYOUNG ,  Seongjun PARK ,  Hyeonjin SHIN ,  Hyunjae SONG ,  Jaeho LEE

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/45

CPC classification number: H01L29/66977 ,  H01L29/456 ,  H01L29/78

Abstract: An electronic device includes a semiconductor layer, a tunneling layer formed of a material including a two-dimensional (2D) material so as to directly contact a certain region of the semiconductor layer, and a metal layer formed on the tunneling layer.

公开(公告)号：US20160315561A1

公开(公告)日：2016-10-27

申请号：US15049726

申请日：2016-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Kyungeun BYUN ,  Minsu SEOL ,  Seongjun PARK

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: A triboelectric generator includes first and second electrodes facing each other, and a first energy generation layer provided on the first electrode and generating electric energy through contact with other material, the first energy generation layer comprising a two-dimensional (2D) material having a crystal structure of a 2D shape.

Abstract translation: 摩擦电发生器包括彼此面对的第一和第二电极，以及设置在第一电极上并通过与其它材料接触而产生电能的第一能量产生层，第一能量产生层包括具有晶体的二维（2D）材料 2D形状的结构。

公开(公告)号：US20240151522A1

公开(公告)日：2024-05-09

申请号：US18412823

申请日：2024-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu LEE ,  Yeonchoo CHO ,  Sangwon KIM ,  Kyung-Eun BYUN ,  Hyunjae SONG ,  Hyeonjin SHIN

IPC: G01B15/02 ,  G01N23/2208 ,  G01N23/2273 ,  H01L21/285 ,  H01L21/66 ,  H01L29/45

CPC classification number: G01B15/02 ,  G01N23/2208 ,  G01N23/2273 ,  H01L21/28512 ,  H01L22/12 ,  H01L29/45 ,  G01N2223/085 ,  G01N2223/61

Abstract: A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

公开(公告)号：US20230335665A1

公开(公告)日：2023-10-19

申请号：US18338631

申请日：2023-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Haeryong KIM ,  Hyeonjin SHIN

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01S5/0687 ,  G01S7/481 ,  H01L31/028 ,  H01L31/032 ,  H01L27/146 ,  H01L31/101 ,  G01S17/931 ,  H10K39/32

CPC classification number: H01L31/1075 ,  H01L31/02027 ,  H01L31/022466 ,  H01L31/03529 ,  H01S5/0687 ,  G01S7/4816 ,  G01S7/4817 ,  H01L31/028 ,  H01L31/032 ,  H01L27/14643 ,  H01L31/035209 ,  H01L27/14647 ,  H01L31/035281 ,  H01L31/1013 ,  G01S17/931 ,  H10K39/32 ,  G05D2201/0213 ,  H01L31/0304

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US20230253320A1

公开(公告)日：2023-08-10

申请号：US18297852

申请日：2023-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwon Kim ,  Kyung-Eun Byun ,  Hyunijae Song ,  Keunwook Shin ,  Eunkyu Lee ,  Changseok Lee ,  Yeonchoo Cho ,  Taejin Choi

IPC: H01L23/528 ,  H10B53/30

CPC classification number: H01L23/5283 ,  H10B53/30

Abstract: An interconnect structure for reducing a contact resistance, an electronic device including the same, and a method of manufacturing the interconnect structure are provided. The interconnect structure includes a semiconductor layer including a first region having a doping concentration greater than a doping concentration of the rest region of the semiconductor layer, a metal layer facing the semiconductor layer, a semi-metal layer between the semiconductor layer and the metal layer, and a conductive metal oxide layer between the semi-metal layer and the semiconductor and covering the first region.

公开(公告)号：US20230024913A1

公开(公告)日：2023-01-26

申请号：US17949418

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Kyung-Eun BYUN ,  Hyoungsub KIM ,  Taejin PARK ,  Hoijoon KIM ,  Hyeonjin SHIN ,  Wonsik AHN ,  Mirine LEEM ,  Yeonchoo CHO

IPC: H01L21/02

Abstract: A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.