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    Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
    41.
    发明授权
    Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications 有权
    用于在旋转传递转矩磁性随机存取存储器应用中的垂直磁结中提供底部被钉扎层的方法和系统

    公开(公告)号：US09472750B2

    公开(公告)日：2016-10-18

    申请号：US14977145

    申请日：2015-12-21

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Dustin William Erickson ,  Jang-Eun Lee

    IPC: H01L21/8234 ,  H01L21/8244 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than its out-of-plane demagnetization energy. Providing the pinned layer includes providing a bulk PMA (B-PMA) layer, providing an interfacial PMA (I-PMA) layer on the B-PMA layer and then providing a sacrificial layer that is a sink for a constituent of the first I-PMA layer. An anneal is then performed. The sacrificial layer and part of the first I-PMA layer are removed after the anneal. Additional I-PMA layer(s) are provided after the removing. A remaining part of the first I-PMA layer and the additional I-PMA layer(s) have a thickness of not more than twenty Angstroms.

    Abstract translation: 描述了用于提供磁结的磁结和方法。 磁结包括由非磁性间隔层隔开的自由和固定层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 钉扎层具有大于其平面外退磁能的垂直磁各向异性（PMA）能量。 提供被钉扎层包括提供大块PMA（B-PMA）层，在B-PMA层上提供界面PMA（I-PMA）层，然后提供牺牲层，其为第一I- PMA层。 然后进行退火。 在退火之后去除牺牲层和第一I-PMA层的一部分。 在除去后提供额外的I-PMA层。 第一I-PMA层和附加的I-PMA层的剩余部分的厚度不超过二十埃。

    METHOD FOR PROVIDING A PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC DEVICES USING A SACRIFICIAL INSERTION LAYER
    42.
    发明申请
    METHOD FOR PROVIDING A PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC DEVICES USING A SACRIFICIAL INSERTION LAYER 有权
    用于提供使用真正插入层的旋转传递扭矩磁体装置中的全息磁性异相磁性连接的方法

    公开(公告)号：US20160005954A1

    公开(公告)日：2016-01-07

    申请号：US14712792

    申请日：2015-05-14

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Dustin William Erickson ,  Xueti Tang ,  Jangeun Lee

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

    CPC classification number: H01L43/12 ,  H01L43/08

    Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the step of providing the free layer includes a first plurality of steps and the step of providing the pinned layer includes a second plurality of steps. The first and second plurality of steps include depositing a portion of a layer, depositing a sacrificial layer, annealing the portion of the magnetic junction under the sacrificial layer, and depositing a remaining portion of the layer. The layer may be the free layer, the pinned layer, or both.

    Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 该方法包括在自由层和钉扎层之间提供自由层，钉扎层和非磁性间隔层。 当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 提供自由层的步骤中的至少一个包括第一多个步骤，并且提供钉扎层的步骤包括第二多个步骤。 第一和第二多个步骤包括沉积层的一部分，沉积牺牲层，将牺牲层下面的磁结的部分退火，以及沉积该层的剩余部分。 该层可以是自由层，钉扎层或两者。

    Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
    43.
    发明授权
    Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions 有权
    具有插入层的磁结和使用磁结的磁存储器

    公开(公告)号：US09130155B2

    公开(公告)日：2015-09-08

    申请号：US14048329

    申请日：2013-10-08

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Roman Chepulskyy ,  Xueti Tang ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    IPC: H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

    Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.

    Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 磁结的一部分包括至少一个磁性子结构。 磁性亚结构包括至少一个Fe层和至少一个非磁性插入层。 所述至少一个Fe层与所述至少一个非磁性插入层共享至少一个界面。 所述至少一个非磁性插入层中的每一个由W，I，Hf，Bi，Zn，Mo，Ag，Cd，Os和In中的至少一种构成。

    METHOD AND SYSTEM FOR PROVIDING A TOP PINNED LAYER PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS
    44.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A TOP PINNED LAYER PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 审中-公开
    用于提供顶针式层的方法和系统可用于旋转传动扭矩磁性随机存取存储器应用中的全息磁性ANISOTROPY磁性连接

    公开(公告)号：US20150129996A1

    公开(公告)日：2015-05-14

    申请号：US14184664

    申请日：2014-02-19

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jang Eun Lee ,  Kiseok Moon

    IPC: H01L43/12 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08

    CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

    Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. A free layer and nonmagnetic spacer layer are provided. The free layer and nonmagnetic spacer layer are annealed at an anneal temperature of at least three hundred fifty degrees Celsius. A pinned layer is provided after the annealing step. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 提供自由层和非磁性间隔层。 自由层和非磁性间隔层在至少三十五摄氏度的退火温度下退火。 在退火步骤之后提供钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

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