公开(公告)号：US20230413681A1

公开(公告)日：2023-12-21

申请号：US17807485

申请日：2022-06-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Samsung Electronics Co., Ltd.

Inventor： Panagiotis Charilaos Filippou ,  Chirag Garg ,  See-Hun Yang ,  Mahesh Samant ,  . Ikhtiar ,  Jaewoo Jeong

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, and a computer system. The MRAM stack includes a first magnetic layer comprising a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure having a crystalline structure configured to template the Heusler compound. The magnetic layer is formed over the templating structure. The MRAM stack also includes a chromium (Cr) layer formed under the templating structure. The Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of the MRAM stack.

公开(公告)号：US20240249759A1

公开(公告)日：2024-07-25

申请号：US18185961

申请日：2023-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaewoo Jeong ,  Dmytro Apalkov ,  . Ikhtiar ,  Roman Chepulskyy

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetic memory device includes a spin-orbit interaction active core having a number of layers stacked along a longitudinal axis and a magnetic junction extending around the longitudinal axis and substantially surrounding at least a portion of the spin-orbit interaction active core. The magnetic junction includes a free layer, a reference layer, and a tunnel barrier layer between the free layer and the reference layer.

公开(公告)号：US20200158796A1

公开(公告)日：2020-05-21

申请号：US16194248

申请日：2018-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： . Ikhtiar ,  Xueti Tang ,  Mohamad Krounbi

IPC: G01R33/09 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic tunnel junction stack includes: a pinned layer; a main oxide barrier layer on the pinned layer; a free layer on the main oxide barrier layer; and a hybrid oxide/metal cap layer on the free layer. The hybrid oxide/metal cap layer includes: a first oxide layer on the free layer; a second oxide layer on the first oxide layer; and a metallic cap layer on the second oxide layer, wherein the free layer is free of boron (B).

公开(公告)号：US20240155950A1

公开(公告)日：2024-05-09

申请号：US18179588

申请日：2023-03-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Samsung Electronics Co., Ltd.

Inventor： Panagiotis Charilaos Filippou ,  Chirag Garg ,  Mahesh Samant ,  . Ikhtiar ,  Jaewoo Jeong

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20 ,  H10N50/85

CPC classification number: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20 ,  H10N50/85

Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and an MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a multi-layer templating structure that includes a crystalline structure configured to template the Heusler compound and enhance a tunnel magnetoresistance (TMR) of the MRAM stack. The first magnetic layer is formed over the multi-layer templating structure. The multi-layer templating structure includes a layer of a first binary alloy including tungsten-aluminum (WAl), and a layer of a second binary alloy having a cesium-chloride (CsCl) structure. The second binary alloy overlays the first binary alloy.