公开(公告)号：US20160005959A1

公开(公告)日：2016-01-07

申请号：US14851800

申请日：2015-09-11

Applicant: QUALCOMM Incorporated

Inventor： Xia Li ,  Seung Kang ,  Xiaochun Zhu

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: In a particular embodiment, an apparatus is disclosed that includes a first electrode and a magnetic tunnel junction (MTJ) structure coupled to the first electrode. A second electrode is coupled to the MTJ structure, the second electrode having a first sidewall. A spacer layer is coupled to the first electrode, the first sidewall of the second electrode, and a sidewall of the MTJ structure. A third electrode is coupled to the second electrode, where the first sidewall of the second electrode contacts a bottom surface of the third electrode at a right angle.

Abstract translation: 在一个具体实施例中，公开了一种包括耦合到第一电极的第一电极和磁隧道结（MTJ）结构的装置。 第二电极耦合到MTJ结构，第二电极具有第一侧壁。 间隔层耦合到第一电极，第二电极的第一侧壁和MTJ结构的侧壁。 第三电极耦合到第二电极，其中第二电极的第一侧壁以直角接触第三电极的底表面。

公开(公告)号：US20150263266A1

公开(公告)日：2015-09-17

申请号：US14460731

申请日：2014-08-15

Applicant: QUALCOMM Incorporated

Inventor： Matthias Georg Gottwald ,  Chando Park ,  Xiaochun Zhu ,  Kangho Lee ,  Seung Hyuk Kang

IPC: H01L43/08 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673

Abstract: An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.

Abstract translation: 一种装置包括垂直磁各向异性磁隧道结（pMTJ）装置。 pMTJ设备包括存储层和参考层。 参考层包括被配置为产生亚铁磁效应的部分。 该部分包括第一层，第二层和第三层。 第二层被配置为在pMTJ器件的操作期间反铁磁（AF）耦合第一层和第三层。

公开(公告)号：US20150074433A1

公开(公告)日：2015-03-12

申请号：US14072735

申请日：2013-11-05

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

IPC: G06F21/70 ,  G06F1/26

CPC classification number: G06F21/70 ,  G06F1/26 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  G11C17/02 ,  G11C17/14 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

Abstract translation: 一个特征涉及实现物理上不可克隆的功能的方法，其包括提供金属 - 绝缘体 - 金属（MIM）器件的阵列，其中MIM器件被配置为表示第一电阻状态或第二电阻状态，并且多个 MIM器件最初处于第一电阻状态。 MIM器件具有大于第一电压且小于第二电压的随机击穿电压，其中击穿电压表示使MIM器件从第一电阻状态转变到第二电阻状态的电压。 该方法还包括向MIM器件施加信号线电压以使MIM器件的一部分随机击穿并从第一电阻状态转变到第二电阻状态，信号线电压大于第一电压并小于 第二电压。

公开(公告)号：US20150019147A1

公开(公告)日：2015-01-15

申请号：US13939243

申请日：2013-07-11

Applicant: QUALCOMM Incorporated

Inventor： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang

IPC: G01R31/26

CPC classification number: G01R31/26 ,  G11B5/3166 ,  G11C11/16 ,  G11C29/50 ,  G11C2029/5002 ,  H01L43/12

Abstract: For first and second magnetic tunnel junction (MTJ) elements, a trend in a relationship between an electrical characteristic of the first and second MTJ elements and an area of the first and second MTJ elements may be determined. Damage to a sidewall of the first and second MTJ elements may be estimated from the trend. At least one operating parameter of an MTJ manufacturing apparatus may be modified based on an X or Y intercept a trend line.

Abstract translation: 对于第一和第二磁性隧道结（MTJ）元件，可以确定第一和第二MTJ元件的电特性与第一和第二MTJ元件的面积之间的关系的趋势。 可以从趋势估计对第一和第二MTJ元件的侧壁的损坏。 可以基于X或Y拦截趋势线来修改MTJ制造装置的至少一个操作参数。

公开(公告)号：US08913423B2

公开(公告)日：2014-12-16

申请号：US13772576

申请日：2013-02-21

Applicant: QUALCOMM Incorporated

Inventor： Kangho Lee ,  Seung H. Kang ,  Xiaochun Zhu

IPC: G11C11/00 ,  G11C15/02 ,  H01L43/02 ,  G06F17/50 ,  G11C11/16

CPC classification number: H01L43/08 ,  G06F17/5068 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/12

Abstract: An apparatus includes a memory cell including a magnetic tunnel junction (MTJ) structure coupled between a bit line and a source line. The MTJ structure includes a free layer coupled to the bit line and a pinned layer. A magnetic moment of the free layer is substantially parallel to a magnetic moment of the pinned layer in a first state and substantially antiparallel to the magnetic moment of the pinned layer in a second state. A physical dimension of the pinned layer produces an unbalanced offset magnetic field which corresponds to a first switching current of the MTJ structure that enables switching from the first state to the second state when a first voltage is applied to the bit line and corresponds to a second switching current that enables switching from the second state to the first state when the first voltage is applied to the source line.

Abstract translation: 一种装置包括存储单元，其包括耦合在位线和源极线之间的磁性隧道结（MTJ）结构。 MTJ结构包括耦合到位线和固定层的自由层。 自由层的磁矩基本上平行于处于第一状态的被钉扎层的磁矩，并且在第二状态下基本上与销钉层的磁矩反平行。 钉扎层的物理尺寸产生不平衡偏移磁场，其对应于MTJ结构的第一开关电流，当第一电压施加到位线并且对应于第二电压时，能够从第一状态切换到第二状态 当第一电压施加到源极线时，切换电流能够从第二状态切换到第一状态。

公开(公告)号：US08912013B2

公开(公告)日：2014-12-16

申请号：US13720074

申请日：2012-12-19

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Seung H. Kang ,  Xia Li

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/82 ,  G11C27/00 ,  G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  G11C7/00 ,  G11C11/06 ,  H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetic tunneling junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, an apparatus is disclosed that includes an MTJ device. The MTJ device includes a free layer and a spin torque enhancing layer. The spin torque enhancing layer includes a nano-oxide layer.

Abstract translation: 公开了一种磁隧道结（MTJ）装置及其制造方法。 在特定实施例中，公开了一种包括MTJ装置的装置。 MTJ装置包括自由层和自旋转矩增强层。 自旋扭矩增强层包括纳米氧化物层。

公开(公告)号：US20140206104A1

公开(公告)日：2014-07-24

申请号：US14219026

申请日：2014-03-19

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Xia Li ,  Wei-Chuan Chen ,  Seung Hyuk Kang

IPC: H01L43/12

CPC classification number: H01L43/12 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/325 ,  H01L27/222 ,  H01L41/12 ,  H01L43/08 ,  H01L43/10

Abstract: Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced in a controlled direction and/or with a controlled magnitude during fabrication. The MTJ is permanently subject to a predetermined directed stress and permanently includes the directed static strain/strain that provides reduced switching current.

Abstract translation: 使用在MTJ上引起定向静态应变/应力以增加垂直磁各向异性的工艺和结构构造来构造部分垂直磁各向异性（PPMA）型磁性随机存取存储器单元。 因此，MTJ的开关电流降低。 在制造过程中，受控方向和/或受控幅度诱发MTJ上的定向静态应变/应力。 MTJ永久地受到预定的定向应力，并且永久地包括提供减小的开关电流的定向静态应变/应变。

公开(公告)号：US20140073064A1

公开(公告)日：2014-03-13

申请号：US14086054

申请日：2013-11-21

Applicant: QUALCOMM Incorporated

Inventor： Seung Hyuk Kang ,  Xia Li ,  Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Wah Nam Hsu

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers are deposited on a bottom electrode aligned with the bottom metal. An etch stop layer may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ.

Abstract translation: 具有直接接触的磁性隧道结（MTJ）被制造成具有较低的电阻，提高的产量和更简单的制造。 较低的电阻提高了MTJ中的读取和写入过程。 MTJ层沉积在与底部金属对准的底部电极上。 蚀刻停止层可以沉积在底部金属附近，以防止围绕底部金属的绝缘体的过蚀刻。 在沉积MTJ层之前将底部电极平坦化以提供基本平坦的表面。 另外，可以在MTJ层之前的底部电极上沉​​积底层以促进MTJ的期望特性。

公开(公告)号：US20140035075A1

公开(公告)日：2014-02-06

申请号：US14048704

申请日：2013-10-08

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Seung Hyuk Kang ,  Xia Li ,  Kangho Lee

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic tunnel junction device includes a Synthetic Anti-Ferromagnetic (SAF) layer, a first free layer, and second free layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers. The first free layer is magneto-statically coupled to the second free layer. A thickness of the spacer layer is at least 4 Angstroms.

Abstract translation: 磁性隧道结装置包括合成反铁磁（SAF）层，第一自由层和第二自由层。 磁性隧道结装置还包括在第一和第二自由层之间的间隔层。 第一自由层被磁静态耦合到第二自由层。 间隔层的厚度至少为4埃。

公开(公告)号：US20130130406A1

公开(公告)日：2013-05-23

申请号：US13720074

申请日：2012-12-19

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun Zhu ,  Seung H. Kang ,  Xia Li

IPC: H01L43/12

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetic tunneling junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, an apparatus is disclosed that includes an MTJ device. The MTJ device includes a free layer and a spin torque enhancing layer. The spin torque enhancing layer includes a nano-oxide layer.

Abstract translation: 公开了一种磁隧道结（MTJ）装置及其制造方法。 在特定实施例中，公开了一种包括MTJ装置的装置。 MTJ装置包括自由层和自旋转矩增强层。 自旋扭矩增强层包括纳米氧化物层。