公开(公告)号：US06509354B1

公开(公告)日：2003-01-21

申请号：US09673633

申请日：2000-10-27

申请人： Keiji Toriyabe ,  Nobuo Takefuji ,  Minoru Itou ,  Tetsuya Hirade ,  Kiyotoshi Nishiyama ,  Mitsuharu Asahida ,  Yasunobu Maeda ,  Nobuhide Wada ,  Toyokazu Fujisawa ,  Hiroyuki Yano ,  Masaaki Komatsu ,  Osamu Tada

发明人： Keiji Toriyabe ,  Nobuo Takefuji ,  Minoru Itou ,  Tetsuya Hirade ,  Kiyotoshi Nishiyama ,  Mitsuharu Asahida ,  Yasunobu Maeda ,  Nobuhide Wada ,  Toyokazu Fujisawa ,  Hiroyuki Yano ,  Masaaki Komatsu ,  Osamu Tada

IPC分类号： A61K31445

CPC分类号： C07D213/12 ,  A01N31/08 ,  A01N31/14 ,  A01N33/10 ,  A01N37/08 ,  A01N37/34 ,  A01N41/10 ,  A01N43/08 ,  A01N43/10 ,  A01N43/40 ,  A01N43/54 ,  A01N43/56 ,  A01N43/653 ,  A01N43/76 ,  A01N43/78 ,  A01N47/18 ,  C07C317/32 ,  C07C317/48 ,  C07C323/18 ,  C07C323/20 ,  C07C323/36 ,  C07C323/63 ,  C07D213/32 ,  C07D213/48 ,  C07D213/57 ,  C07D213/64 ,  C07D239/36 ,  C07D239/38 ,  C07D239/40 ,  C07D249/08 ,  C07D333/24

摘要： 3-Arylphenyl sulfide derivatives represented by general formula (I): (wherein R is a C2-C6 alkyl group, a C2-C6 alkenyl group, a C2-C6 alkynyl group or the like, B0 to B2 and B3 are hydrogen atoms, halogen atoms, cyano groups, C1-C4 haloalkyl groups or the like, n is 0, 1 or 2, and Ar is a phenyl ring, a pyridine ring, a thiophene ring, a pyrazole ring or the like), and insecticides and miticides containing the 3-arylphenyl sulfide derivatives as an active ingredient.

摘要翻译： 由通式（I）表示的3-芳基苯基硫醚衍生物:(其中R为C2-C6烷基，C2-C6烯基，C2-C6炔基等，B0至B2和B3为氢原子， 卤素原子，氰基，C 1〜C 4卤代烷基等，n为0,1或2，Ar为苯环，吡啶环，噻吩环，吡唑环等），杀虫剂和杀螨剂 含有3-芳基苯基硫醚衍生物作为活性成分。

公开(公告)号：US06069081A

公开(公告)日：2000-05-30

申请号：US430972

申请日：1995-04-28

申请人： Kathryn Helen Kelleher ,  Matthias Peschke ,  Hiroyuki Yano

发明人： Kathryn Helen Kelleher ,  Matthias Peschke ,  Hiroyuki Yano

IPC分类号： H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/302

CPC分类号： H01L21/31053

摘要： A method of planarizing a dielectric coating applied over an underlying structure on an integrated circuit wafer employs a two-step chemical mechanical polishing (CMP) process. The underlying structure is characterized as having elevated areas and recessed areas. The wafer can be prepared by applying a first polish stop on the elevated areas, then depositing a layer of dielectric over at least the recessed areas, and finally depositing a second polish stop over the resulting dielectric coating. In some applications a first polish stop is not required. The first step in the two-step CMP is polishing the second polish stop using a slurry that polishes the second polish stop until the second polish stop is substantially removed over the elevated areas. The second step is polishing the dielectric coating that remains using a second slurry that polishes the dielectric at a faster rate than it polishes either the second or first polish stop.

摘要翻译： 平面化在集成电路晶片上的下面的结构上施加的电介质涂层的方法采用两步化学机械抛光（CMP）工艺。 底层结构的特征在于具有升高的区域和凹陷区域。 可以通过在升高的区域上施加第一抛光光阑，然后在至少凹陷区域上沉积电介质层，最后在所得到的电介质涂层上沉积第二抛光光阑来制备晶片。 在某些应用中，不需要第一次抛光停止。 两步CMP中的第一步是使用抛光第二抛光止动件的浆料抛光第二抛光停止，直到在升高的区域上基本上移除第二抛光止动件。 第二步骤是抛光使用第二浆料保留的电介质涂层，该第二浆料以比抛光第二或第一抛光光阑更快的速度抛光电介质。

公开(公告)号：US5948205A

公开(公告)日：1999-09-07

申请号：US897570

申请日：1997-07-21

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US5616594A

公开(公告)日：1997-04-01

申请号：US338446

申请日：1994-01-18

申请人： Atsuhiko Ikeda ,  Masami Ozaki ,  Reijiro Honami ,  Takashi Yumita ,  Hiroyuki Yano ,  Yuki Nakano ,  Yutaka Kurihara ,  Tadayoshi Hirano

发明人： Atsuhiko Ikeda ,  Masami Ozaki ,  Reijiro Honami ,  Takashi Yumita ,  Hiroyuki Yano ,  Yuki Nakano ,  Yutaka Kurihara ,  Tadayoshi Hirano

IPC分类号： A01N43/653 ,  A01P7/02 ,  A01P7/04 ,  C07D249/08 ,  C07D401/12 ,  C07D401/10

CPC分类号： C07D249/08 ,  A01N43/653 ,  C07D401/12

摘要： The invention provides a triazole derivative represented by a general formula ##STR1## (wherein R.sup.1 is an alkyl group, X is a hydrogen atom, a halogen atom or an alkyl group, n is an integer of 1-5, Y is a halogen atom, a nitro group or an alkyl group, and m is an integer of 2-5) as well as insecticide and acaricide containing the same as an active ingredient.The triazole derivatives according to the invention exhibit an excellent effectiveness against harmful pests, particularly aphids and mites.

摘要翻译： PCT No.PCT / JP94 / 00629 Sec。 371日期：1994年11月18日 102（e）1994年11月18日PCT PCT 1994年4月15日PCT公布。 公开号WO94 / 24110 日期：1994年10月27日本发明提供由通式[IMAGE] [I]表示的三唑衍生物（其中，R 1为烷基，X为氢原子，卤素原子或烷基，n为1的整数 -5，Y为卤素原子，硝基或烷基，m为2-5的整数）以及含有与活性成分相同的杀虫剂和杀螨剂。 根据本发明的三唑衍生物对有害害虫，特别是蚜虫和螨虫表现出极好的效果。

公开(公告)号：US5607718A

公开(公告)日：1997-03-04

申请号：US300127

申请日：1994-09-02

申请人： Yasutaka Sasaki ,  Mie Matsuo ,  Rempei Nakata ,  Junichi Wada ,  Nobuo Hayasaka ,  Hiroyuki Yano ,  Haruo Okano

发明人： Yasutaka Sasaki ,  Mie Matsuo ,  Rempei Nakata ,  Junichi Wada ,  Nobuo Hayasaka ,  Hiroyuki Yano ,  Haruo Okano

IPC分类号： B24B37/015 ,  B24B49/14 ,  B24B57/02 ,  H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  B05D5/12 ,  C03C15/00 ,  H01L21/465

CPC分类号： B24B37/015 ,  B24B57/02 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/3213 ,  H01L21/7684

摘要： This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.

摘要翻译： 本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成待研磨的膜，以便至少填充凹部，并且通过在凹部中选择性地将被抛光的膜留在后面 通过使用含有研磨粒子和溶剂的研磨剂，pH为7.5以上来研磨该膜。 本发明还提供了一种抛光装置，其包括：用于存储抛光剂的抛光剂储存容器，用于抛光待抛光对象物的转盘，用于将抛光剂从抛光剂储存容器供应到转台上的抛光剂供给管， 抛光对象保持夹具，用于保持待抛光对象物，使被处理物体的表面与转盘相对;抛光剂供给管温度调节单元，连接到抛光剂供应管，用于调节抛光温度 代理商

公开(公告)号：US5398459A

公开(公告)日：1995-03-21

申请号：US156641

申请日：1993-11-24

申请人： Katsuya Okumura ,  Tohru Watanabe ,  Riichirou Aoki ,  Hiroyuki Yano ,  Masako Kodera ,  Atsushi Shigeta ,  You Ishii ,  Norio Kimura ,  Masayoshi Hirose ,  Yukio Ikeda

发明人： Katsuya Okumura ,  Tohru Watanabe ,  Riichirou Aoki ,  Hiroyuki Yano ,  Masako Kodera ,  Atsushi Shigeta ,  You Ishii ,  Norio Kimura ,  Masayoshi Hirose ,  Yukio Ikeda

IPC分类号： B24B37/10 ,  B24B37/30 ,  B24B1/00

CPC分类号： B24B37/102 ,  B24B37/30

摘要： A workpiece such as a semiconductor wafer is positioned between a turntable and a top ring and polished by an abrasive cloth on the turntable while the top ring is being pressed against the turntable. The top ring has a retaining ring for preventing the workpiece from deviating from the lower surface of the top ring, and the retaining ring has an inside diameter larger than an outside diameter of the workpiece. The rotation of the turntable imparts a pressing force in a direction parallel to the upper surface of the turntable to the workpiece so that an outer periphery of the workpiece contacts an inner periphery of the retaining ring, and the rotation of the retaining ring imparts a rotational force to the workpiece so that the workpiece performs a planetary motion relative to the top ring in the retaining ring.

摘要翻译： 诸如半导体晶片的工件位于转盘和顶环之间，并且当顶环被压靠在转盘上时，其通过研磨布在转盘上抛光。 顶环具有用于防止工件偏离顶环的下表面的保持环，并且保持环的内径大于工件的外径。 转台的转动使平台于转台上表面的方向向工件施加压力，使得工件的外周与保持环的内周接触，并且保持环的旋转赋予转动 使工件相对于保持环中的顶环执行行星运动。

公开(公告)号：US5318959A

公开(公告)日：1994-06-07

申请号：US956984

申请日：1992-10-06

申请人： Masami Ozaki ,  Atsuhiko Ikeda ,  Reijiro Honami ,  Takashi Yumita ,  Naokazu Minoguchi ,  Hiroyuki Yano ,  Norihiko Izawa ,  Tadayoshi Hirano

发明人： Masami Ozaki ,  Atsuhiko Ikeda ,  Reijiro Honami ,  Takashi Yumita ,  Naokazu Minoguchi ,  Hiroyuki Yano ,  Norihiko Izawa ,  Tadayoshi Hirano

IPC分类号： A01N43/653 ,  A01N55/00 ,  A01P7/02 ,  C07D249/08 ,  C07D401/02 ,  C07D401/10 ,  C07D401/12 ,  C07F7/08

CPC分类号： C07D249/08 ,  A01N43/653 ,  A01N55/00 ,  C07D401/10 ,  C07D401/12 ,  C07F7/0812

摘要： A novel triazole derivative for use in an insecticide or an acaricide has a general formula [I]: ##STR1## (wherein R.sup.1 is an alkyl group, X is a hydrogen atom, a halogen atom, an alkyl group or the like, n is an integer of 1-5, Y is an alkenyl group, an alkynyl group, an alkoxyalkyl group or the like) and controls various injurious insects and mites, particularly mites and aphids without damaging crops.

摘要翻译： 用于杀虫剂或杀螨剂的新型三唑衍生物具有通式[I]：其中R 1为烷基，X为氢原子，卤原子，烷基等 n为1〜5的整数，Y为烯基，炔基，烷氧基烷基等），并且可以控制各种害虫，螨，特别是螨虫和蚜虫，而不损害作物。

公开(公告)号：US5302240A

公开(公告)日：1994-04-12

申请号：US20193

申请日：1993-02-19

申请人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano ,  Kazuhiro Tomioka ,  Yasuhiro Ito ,  Haruki Mori

发明人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano ,  Kazuhiro Tomioka ,  Yasuhiro Ito ,  Haruki Mori

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/3213 ,  H01L2/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/31122 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

摘要： A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.

摘要翻译： 一种干蚀刻方法，包括以下步骤：在要蚀刻的基底上形成碳膜，在所述碳薄膜上形成抗蚀剂图案，使用所述抗蚀剂图案作为掩模，用等离子体选择性地蚀刻所述碳膜， 含有氟原子的气体和以氟与氧的原子比混合为198:1〜1:2的含有氧原子的气体，以形成碳膜图案，并使用所述碳膜选择性地蚀刻所述蚀刻用基板 图案作为掩模或所述抗蚀剂图案和所述碳膜图案作为掩模。

公开(公告)号：US5240554A

公开(公告)日：1993-08-31

申请号：US824095

申请日：1992-01-22

申请人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano

发明人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano

IPC分类号： H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/3213

CPC分类号： H01L21/31138 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/32136 ,  H01L21/32139 ,  Y10S438/945

摘要： A method of manufacturing a semiconductor device includes the steps of forming a carbon film on a target film formed on a substrate, forming an organic film pattern on the carbon film, etching the carbon film using the organic film pattern as a mask to form a carbon film pattern, and heating the substrate, supplying an etching gas having halogen atoms to a reaction area where the substrate is stored, applying an electric field to the reaction area to generate a discharge, and anisotropically etching the silicon oxide film using the carbon film pattern as a mask and a plasma formed by the discharge.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在形成在基片上的靶膜上形成碳膜，在碳膜上形成有机膜图案，使用有机膜图案作为掩模蚀刻碳膜，形成碳 并对基板进行加热，将具有卤素原子的蚀刻气体供给到存储基板的反应区域，向反应区域施加电场以产生放电，并使用碳膜图案进行各向异性蚀刻氧化硅膜 作为掩模和通过放电形成的等离子体。

公开(公告)号：US10329224B2

公开(公告)日：2019-06-25

申请号：US14383479

申请日：2012-03-13

申请人： Kazuhiro Takagaki ,  Hiroyuki Yano

发明人： Kazuhiro Takagaki ,  Hiroyuki Yano

IPC分类号： C07C7/11 ,  C07C5/48 ,  C07C7/00 ,  C07C7/10 ,  B01J23/887

摘要： An object of the present invention is to provide a method for production of a high purity conjugated diolefin. The method for production of a conjugated diolefin of the present invention comprises steps of supplying a source gas containing a C4 or higher monoolefin and an oxygen-containing gas into a reactor, bringing a catalyst into contact with the gas mixture, compressing a gas containing a conjugated diolefin produced by an oxidative dehydrogenation reaction to obtain a liquefied gas and rinsing the liquefied gas with water.