公开(公告)号：US08840753B2

公开(公告)日：2014-09-23

申请号：US12578007

申请日：2009-10-13

Applicant: Masanobu Honda ,  Kazuya Nagaseki ,  Koichiro Inazawa ,  Shoichiro Matsuyama ,  Hisataka Hayashi

Inventor： Masanobu Honda ,  Kazuya Nagaseki ,  Koichiro Inazawa ,  Shoichiro Matsuyama ,  Hisataka Hayashi

IPC: H01L21/306 ,  C23C16/50 ,  C23C16/00 ,  H01L21/311 ,  H01L21/768 ,  H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/3266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract translation: 本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板 具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过 电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

公开(公告)号：US08536061B2

公开(公告)日：2013-09-17

申请号：US13045818

申请日：2011-03-11

Applicant: Hisataka Hayashi ,  Yusuke Kasahara ,  Tsubasa Imamura

Inventor： Hisataka Hayashi ,  Yusuke Kasahara ,  Tsubasa Imamura

IPC: H01L21/306

CPC classification number: H01L21/31116 ,  H01L21/32137 ,  H01L27/0688 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

Abstract: According to one embodiment, a semiconductor device manufacturing method includes collectively etching layers of a multilayered film including silicon layers and silicon oxide films alternately stacked on a semiconductor substrate. The etching gas of the etching contains at least two types of group-VII elements and one of a group-III element, a group-IV element, a group-V element, and a group-VI element, the energy of ions entering the semiconductor substrate when performing the etching is not less than 100 eV, and an addition ratio of the group-III element, the group-IV element, the group-V element, the group-VI element, and the group-VII element to the group-VII element is 0.5 (inclusive) to 3.0 (inclusive).

Abstract translation: 根据一个实施例，半导体器件制造方法包括共同地蚀刻包含交替层叠在半导体衬底上的硅层和氧化硅膜的多层膜的层。 蚀刻蚀刻气体含有至少两种类型的VII族元素和III族元素，IV族元素，V族元素和VI族元素中的一种，离子的能量进入 进行蚀刻时的半导体基板为100eV以上，III族元素，IV族元素，V族元素，VI族元素和VII族元素相对于 Ⅶ族元素为0.5（含）〜3.0（含）以上。

公开(公告)号：US08252193B2

公开(公告)日：2012-08-28

申请号：US12052522

申请日：2008-03-20

Applicant: Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

Inventor： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC: G01R31/00 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

Abstract: A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

Abstract translation: 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US07749914B2

公开(公告)日：2010-07-06

申请号：US10960538

申请日：2004-10-08

Applicant: Masanobu Honda ,  Kazuya Nagaseki ,  Hisataka Hayashi

Inventor： Masanobu Honda ,  Kazuya Nagaseki ,  Hisataka Hayashi

IPC: H01L21/302

CPC classification number: H01J37/32688 ,  H01J2237/3347 ,  H01L21/31138 ,  H01L21/31144

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and plasma-etching the organic-material film of the substrate by means of the plasma partway in order to form a groove having a flat bottom. A frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract translation: 本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板 具有有机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过 电场的方法，以及通过等离子体中途等离子体刻蚀基板的有机材料膜以形成具有平坦底部的凹槽。 在蚀刻步骤中，施加到至少一个电极的高频电力的频率为50〜150MHz。

公开(公告)号：US20080237185A1

公开(公告)日：2008-10-02

申请号：US12052522

申请日：2008-03-20

Applicant: Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

Inventor： Akio UI ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

Abstract: A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

Abstract translation: 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US07419613B2

公开(公告)日：2008-09-02

申请号：US10538064

申请日：2003-12-25

Applicant: Masanobu Honda ,  Shoichiro Matsuyama ,  Kazuya Nagaseki ,  Hisataka Hayashi

Inventor： Masanobu Honda ,  Shoichiro Matsuyama ,  Kazuya Nagaseki ,  Hisataka Hayashi

IPC: B44C1/22

CPC classification number: H01L21/31138 ,  H01J37/32522 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32688 ,  H01J2237/3341

Abstract: A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016 cm2 or above.

Abstract translation: 构成平行板电极的支撑电极（2）和对置电极（16）设置在处理容器（1）中。 形成有有机材料膜的基板（W）由支撑电极（2）支撑。 在支撑电极（2）上施加用于产生等离子体的频率为40MHz以上的高频电力，使得在支撑电极（2）和对电极（16）之间形成高频电场 ）。 将处理气体供给到处理容器（1）中，以通过高频电场产生处理气体的等离子体。 用等离子体对基板（W）上的有机材料膜进行蚀刻，将有机材料膜用作掩模。 工艺气体包括电离加速气体，例如Ar，其离子化能为10eV或更低的基态或亚稳态离子化，并且具有最大离子化横截面积为2×10 16 cm 2以上。

公开(公告)号：US07285498B2

公开(公告)日：2007-10-23

申请号：US10956365

申请日：2004-10-04

Applicant: Kazuto Ogawa ,  Rie Inazawa, legal representative ,  Hisataka Hayashi ,  Tokuhisa Ohiwa

Inventor： Koichiro Inazawa, deceased

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/31138 ,  H01L21/31116 ,  H01L21/31144

Abstract: An etching method etches an organic film by using an inorganic film as a mask at a high etch rate, in a satisfactory etch profile in a satisfactory in-plane uniformity without causing the inorganic film to peel off. An organic film formed on a workpiece is etched by using an inorganic film as a mask with a plasma produced by discharging an etching gas in a processing vessel (1). The etching method uses a mixed gas containing NH3 gas and O2 gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio of 40% or above. The etching method uses NH3 gas as an etching gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio below 40%.

Abstract translation: 蚀刻方法通过以高蚀刻速率以无机膜为掩模蚀刻有机膜，以令人满意的平面均匀性的令人满意的蚀刻轮廓，而不会使无机膜剥离。 通过使用无机膜作为掩模，通过在处理容器（1）中排出蚀刻气体而产生的等离子体来蚀刻形成在工件上的有机膜。 蚀刻方法使用含有NH 3气体和O 2气体的混合气体来蚀刻有机膜，当有机膜以具有开口率的图案被蚀刻时 40％以上。 当有机膜以开口率低于40％的图案被蚀刻时，蚀刻方法使用NH 3气体作为用于蚀刻有机膜的蚀刻气体。

公开(公告)号：US20060191867A1

公开(公告)日：2006-08-31

申请号：US11348239

申请日：2006-02-07

Applicant: Hisataka Hayashi

Inventor： Hisataka Hayashi

IPC: C23F1/00 ,  H01L21/302 ,  B44C1/22

CPC classification number: H01L21/76835 ,  H01L21/31138 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/76826

Abstract: A method of forming an organic film disposes a substrate on which the organic film is formed in a chamber capable of reducing a pressure therein, introduces a gas including a deuterium compound or a trideuterium compound in the chamber, to generate a plasma by ionizing the gas; and etches and patterning the organic film by the plasma.

Abstract translation: 形成有机膜的方法在其中能够降低其压力的室内形成有有机膜的基板，在室中引入包含氘化合物或三氘化合物的气体，通过使气体离子化而产生等离子体 ; 并通过等离子体蚀刻和图案化有机膜。

公开(公告)号：US20050039854A1

公开(公告)日：2005-02-24

申请号：US10959585

申请日：2004-10-07

Applicant: Shoichiro Matsuyama ,  Masanobu Honda ,  Kazuya Nagaseki ,  Hisataka Hayashi

Inventor： Shoichiro Matsuyama ,  Masanobu Honda ,  Kazuya Nagaseki ,  Hisataka Hayashi

IPC: H01L21/3065 ,  C23F1/00

CPC classification number: H01J37/32082 ,  H01J37/3266 ,  H01L21/3065

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having a silicon film and an inorganic-material film adjacent to the silicon film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the silicon film of the substrate by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract translation: 本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板 具有与硅膜相邻的硅膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过 电场的方法，通过等离子体选择性地等离子体蚀刻衬底的硅膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

公开(公告)号：US06780278B2

公开(公告)日：2004-08-24

申请号：US09892481

申请日：2001-06-28

Applicant: Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

Inventor： Hisataka Hayashi ,  Kazuhiro Tomioka ,  Itsuko Sakai ,  Tokuhisa Ohiwa ,  Akihiro Kojima

IPC: H01L2100

CPC classification number: H01J37/32082 ,  H01J37/32532

Abstract: A plasma processing apparatus comprises a grounded housing, a thin RF plate electrode, an opposite electrode facing the RF plate electrode, and a RF power source for applying a radio frequency to either the RF plate electrode or the opposite electrode to produce plasma between the two electrodes. If the radio frequency applied to the electrode is f (MHz), the parasitic capacity C (pF) between the grounded portion of the housing and a conductive portion through which the radio frequency propagates is less than 1210*f−0.9. The thickness of the RF plate electrode is 1 mm to 6 mm, and it is supported by a heat sink. The heat sink has a coolant passage in the proximity to the RF plate electrode. The heat sink also has a groove or a cavity in addition to the coolant passage, thereby reducing the value of the dielectric constant of the heat sink as a whole.

Abstract translation: 等离子体处理装置包括接地壳体，薄RF板电极，面对RF板电极的相对电极和用于将射频施加到RF板电极或相对电极的RF电源，以在两者之间产生等离子体 电极。 如果施加到电极的射频为f（MHz），则壳体的接地部分与射频传播的导电部分之间的寄生电容C（pF）小于1210×f <-0.9>。 RF板电极的厚度为1mm〜6mm，由散热片支撑。 散热器在RF板电极附近具有冷却剂通道。 除了冷却剂通道之外，散热器还具有凹槽或空腔，从而整体上降低了散热器的介电常数值。