公开(公告)号：US09583360B2

公开(公告)日：2017-02-28

申请号：US13424952

申请日：2012-03-20

Applicant: Akio Ui ,  Hisataka Hayashi ,  Keisuke Kikutani

Inventor： Akio Ui ,  Hisataka Hayashi ,  Keisuke Kikutani

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32174

Abstract: In one embodiment, a substrate processing apparatus, includes: a chamber; a first electrode disposed in the chamber; a second electrode disposed in the chamber to face the first electrode, and to hold a substrate; an RF power supply to apply an RF voltage with a frequency of 50 MHz or more to the second electrode; and a pulse power supply to repeatedly apply a voltage waveform including a negative voltage pulse and a positive voltage pulse of which delay time from the negative voltage pulse is 50 nano-seconds or less to the second electrode while superposing on the RF voltage.

Abstract translation: 在一个实施例中，基板处理装置包括：腔室; 设置在所述室中的第一电极; 设置在所述腔室中以面对所述第一电极并且保持衬底的第二电极; RF电源，向第二电极施加频率为50MHz以上的RF电压; 以及脉冲电源，用于在叠加在RF电压上的同时，将包括负电压脉冲和负电压脉冲的延迟时间的正电压脉冲的电压波形重复地施加到第二电极50纳秒以下。

公开(公告)号：US08821744B2

公开(公告)日：2014-09-02

申请号：US13051771

申请日：2011-03-18

Applicant: Akio Ui ,  Hisataka Hayashi

Inventor： Akio Ui ,  Hisataka Hayashi

IPC: B44C1/22

CPC classification number: H01L21/31116 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174

Abstract: A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode.

Abstract translation: 使用基板处理装置的基板处理方法包括第一步骤和第二步骤。 第一步是施加来自脉冲电源的负电压脉冲以包括在装置中。 第二步是在负电压脉冲和负电压脉冲之后的脉冲电源的正电压脉冲之间的时间间隔上施加浮动电位。 此外，该装置包括腔室，第一电极，第二电极，RF电源和脉冲电源。 第二电极设置成使得第二电极面对第一电极以保持基板。 RF电源对第二电极施加频率为50MHz以上的RF电压。 脉冲电源将具有RF电压的电压波形重复地施加到第二电极。

公开(公告)号：US08821684B2

公开(公告)日：2014-09-02

申请号：US12363070

申请日：2009-01-30

Applicant: Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

Inventor： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC: C23F1/00 ,  C23C16/50 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32027 ,  H01J37/32045 ,  H01J37/32091

Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

Abstract translation: 衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置 以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。

公开(公告)号：US20120080408A1

公开(公告)日：2012-04-05

申请号：US13051771

申请日：2011-03-18

Applicant: Akio UI ,  Hisataka Hayashi

Inventor： Akio UI ,  Hisataka Hayashi

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174

Abstract: A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode.

Abstract translation: 使用基板处理装置的基板处理方法包括第一步骤和第二步骤。 第一步是施加来自脉冲电源的负电压脉冲以包括在装置中。 第二步是在负电压脉冲与负电压脉冲之后的脉冲电源的负电压脉冲和正电压脉冲之间施加浮动电位。 此外，该装置包括腔室，第一电极，第二电极，RF电源和脉冲电源。 第二电极设置成使得第二电极面对第一电极以保持基板。 RF电源对第二电极施加频率为50MHz以上的RF电压。 脉冲电源将具有RF电压的电压波形重复地施加到第二电极。

公开(公告)号：US5592024A

公开(公告)日：1997-01-07

申请号：US330998

申请日：1994-10-28

Applicant: Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

Inventor： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC: H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H01L29/41 ,  H01L29/43

CPC classification number: H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915

Abstract: A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

Abstract translation: 半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散 形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。

公开(公告)号：US08524609B2

公开(公告)日：2013-09-03

申请号：US13230118

申请日：2011-09-12

Applicant: Satoshi Inada ,  Mitsuhiro Omura ,  Hisataka Hayashi

Inventor： Satoshi Inada ,  Mitsuhiro Omura ,  Hisataka Hayashi

IPC: H01L21/302

CPC classification number: H01L21/32139 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/039 ,  G03F7/095 ,  H01L21/0273

Abstract: An aspect of the present embodiment, there is provided a method of fabricating a semiconductor device including providing a film to be processed above a semiconductor substrate, providing a negative-type resist and a photo-curable resist in order, pressing a main surface of a template onto the photo-curable resist, the main surface of the template having a concavo-convex pattern with a light shield portion provided on at least a part of a convex portion, irradiating the template with light from a back surface of the template, developing the negative-type resist and the photo-curable resist so as to print the concavo-convex pattern of the template on the negative-type resist and the photo-curable resist, and etching the film to be processed by using the concavo-convex pattern printed on the negative-type resist and the photo-curable resist as a mask.

Abstract translation: 本实施例的一个方面提供一种制造半导体器件的方法，该半导体器件包括在半导体衬底上提供待加工的膜，依次提供负型抗蚀剂和可光固化抗蚀剂， 模板到可光固化抗蚀剂上，模板的主表面具有凹凸图案，具有设置在凸部的至少一部分上的遮光部分，用来自模板背面的光照射模板，显影 负型抗蚀剂和光固化型抗蚀剂，以便在负型抗蚀剂和可光固化抗蚀剂上印刷模板的凹凸图案，并通过使用凹凸图案来蚀刻待处理的薄膜 印刷在负型抗蚀剂和可光固化抗蚀剂上作为掩模。

公开(公告)号：US07625494B2

公开(公告)日：2009-12-01

申请号：US10860152

申请日：2004-06-04

Applicant: Masanobu Honda ,  Kazuya Nagaseki ,  Koichiro Inazawa ,  Shoichiro Matsuyama ,  Hisataka Hayashi

Inventor： Masanobu Honda ,  Kazuya Nagaseki ,  Koichiro Inazawa ,  Shoichiro Matsuyama ,  Hisataka Hayashi

IPC: H01L21/00 ,  B23K10/00 ,  H05H1/18

CPC classification number: H01J37/32082 ,  H01J37/3266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract translation: 本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板 具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过 电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

公开(公告)号：US20050085077A1

公开(公告)日：2005-04-21

申请号：US10956365

申请日：2004-10-04

Applicant: Kazuto Ogawa ,  Koichiro Inazawa ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Rie Inazawa

Inventor： Kazuto Ogawa ,  Koichiro Inazawa ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Rie Inazawa

IPC: H01L21/3065 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461

CPC classification number: H01L21/31138 ,  H01L21/31116 ,  H01L21/31144

Abstract: An etching method etches an organic film by using an inorganic film as a mask at a high etch rate, in a satisfactory etch profile in a satisfactory in-plane uniformity without causing the inorganic film to peel off. An organic film formed on a workpiece is etched by using an inorganic film as a mask with a plasma produced by discharging an etching gas in a processing vessel (1). The etching method uses a mixed gas containing NH3 gas and O2 gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio of 40% or above. The etching method uses NH3 gas as an etching gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio below 40%.

Abstract translation: 蚀刻方法通过以高蚀刻速率以无机膜为掩模蚀刻有机膜，以令人满意的平面均匀性的令人满意的蚀刻轮廓，而不会使无机膜剥离。 通过使用无机膜作为掩模，通过在处理容器（1）中排出蚀刻气体而产生的等离子体来蚀刻形成在工件上的有机膜。 蚀刻方法使用含有NH 3气体和O 2气体的混合气体来蚀刻有机膜，以有机膜以开口率为 40％以上。 当有机膜以开口率低于40％的图案被蚀刻时，蚀刻方法使用NH 3气体作为用于蚀刻有机膜的蚀刻气体。

公开(公告)号：US5595627A

公开(公告)日：1997-01-21

申请号：US597563

申请日：1996-02-02

Applicant: Koichiro Inazawa ,  Shin Okamoto ,  Hisataka Hayashi ,  Takaya Matsushita

Inventor： Koichiro Inazawa ,  Shin Okamoto ,  Hisataka Hayashi ,  Takaya Matsushita

IPC: H05H1/46 ,  C23F4/00 ,  C30B33/12 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00 ,  C09K13/00

CPC classification number: H01L21/31116

Abstract: A plasma etching apparatus has a lower electrode for supporting a semiconductor wafer in a processing room, an upper electrode opposite to the lower electrode, and an RF power supply for applying an RF power across the upper and lower electrodes. An SiN layer as an underlayer having a shoulder portion, and an SiO.sub.2 layer covering the SiN layer are disposed on the wafer. A contact hole is formed in the SiO.sub.2 layer by etching so as to expose the shoulder portion of the SiN layer. A processing gas contains C.sub.4 F.sub.8 and CO. To set the etching selection ratio of SiO.sub.2 /SiN, the discharge duration of each part of the processing gas is used as a parameter. The progress of dissociation of C.sub.4 F.sub.8 is controlled by selecting the discharge duration. The discharge duration is determined by the residence time of each part of the processing gas and the application time of an RF power.

Abstract translation: 等离子体蚀刻装置具有用于在处理室中支撑半导体晶片的下电极，与下电极相对的上电极，以及用于在上电极和下电极上施加RF电力的RF电源。 作为具有肩部的底层的SiN层和覆盖SiN层的SiO 2层设置在晶片上。 通过蚀刻在SiO 2层中形成接触孔，以露出SiN层的肩部。 处理气体含有C4F8和CO。为了设定SiO 2 / SiN的蚀刻选择比，使用处理气体的各部分的排出持续时间作为参数。 通过选择放电持续时间控制C4F8的离解进程。 放电持续时间由处理气体的每个部分的停留时间和RF功率的施加时间决定。

公开(公告)号：US08545670B2

公开(公告)日：2013-10-01

申请号：US12209617

申请日：2008-09-12

Applicant: Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

Inventor： Akihiro Kojima ,  Hisataka Hayashi ,  Akio Ui

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165

Abstract: A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.

Abstract translation: 使用等离子体处理衬底的等离子体处理装置包括：被配置为安装衬底的第一电极，以预定空间设置为面对第一电极的第二电极，容纳第一电极和第二电极的腔室， 调整内部气氛的第一电源装置，被配置为向第一电极施加用于控制在基板上产生的自偏压的第一RF电压的第一电源装置，施加基本上恒定的宽度和基本恒定的值的第一电力源装置 在间隔的第一频率的RF电压的峰峰值电压中，以及第二电源装置，被配置为将第二频率的第二RF电压施加到第一和第二电极之间的等离子体之一 第一电极和第二电极。