公开(公告)号：US08840753B2

公开(公告)日：2014-09-23

申请号：US12578007

申请日：2009-10-13

Applicant: Masanobu Honda ,  Kazuya Nagaseki ,  Koichiro Inazawa ,  Shoichiro Matsuyama ,  Hisataka Hayashi

Inventor： Masanobu Honda ,  Kazuya Nagaseki ,  Koichiro Inazawa ,  Shoichiro Matsuyama ,  Hisataka Hayashi

IPC: H01L21/306 ,  C23C16/50 ,  C23C16/00 ,  H01L21/311 ,  H01L21/768 ,  H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/3266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract translation: 本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板 具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过 电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

公开(公告)号：US20080128388A1

公开(公告)日：2008-06-05

申请号：US11970062

申请日：2008-01-07

Applicant: Vaidyanathan BALASUBRAMANIAM ,  Koichiro INAZAWA ,  Rie INAZAWA ,  Rich WISE ,  Arpan P. MAHOROWALA ,  Siddhartha PANDA

Inventor： Vaidyanathan BALASUBRAMANIAM ,  Koichiro INAZAWA ,  Rie INAZAWA ,  Rich WISE ,  Arpan P. MAHOROWALA ,  Siddhartha PANDA

IPC: B44C1/22

CPC classification number: H01L21/67069 ,  H01L21/31138

Abstract: A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.

Abstract translation: 一种用于在等离子体处理系统中蚀刻衬底上的有机抗反射涂层（ARC）层的方法，包括：引入包含氨（NH 3）和钝化气体的工艺气体; 从工艺气体形成等离子体; 并将衬底暴露于等离子体。 例如，工艺气体可以构成NH 3和烃气体，例如C 2 H 4 H 4，CH _{，C 4 H 6，C 4 H 8，C 4 H C 5，C 5 H 8，C 5 H 10，C 5，C 5， C 6 H 6，C 6 H 10和C 6 H 12 。 另外，工艺化学可以进一步包括添加氦。 本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法，其中所述方法包括：在所述衬底上形成所述薄膜; 在薄膜上形成ARC层; 在ARC层上形成光刻胶图案; 以及使用包含氨（NH 3 3）的工艺气体和钝化气体的蚀刻工艺将光致抗蚀剂图案转移到ARC层。}

公开(公告)号：US07326650B2

公开(公告)日：2008-02-05

申请号：US10399626

申请日：2001-10-01

Applicant: Yoshihide Kihara ,  Shin Okamoto ,  Koichiro Inazawa ,  Tomoki Suemasa

Inventor： Yoshihide Kihara ,  Shin Okamoto ,  Koichiro Inazawa ,  Tomoki Suemasa

IPC: H01L21/302

CPC classification number: H01L21/76835 ,  H01L21/76811 ,  H01L21/76813

Abstract: In an etching method for achieving a dual damascene structure by using at least one layer of a low-k film and at least one layer of a hard mask, a dummy film, which is ultimately not left in the dual damascene structure, is formed in at least one layer over the hard mask in order to prevent shoulder sag. By adopting this method, a dual damascene structure in which the extent of the shoulder sag at the hard mask is minimized can be achieved through etching.

Abstract translation: 在通过使用至少一层低k膜和至少一层硬掩模层来实现双镶嵌结构的蚀刻方法中，最终不留在双镶嵌结构中的虚拟膜形成在 至少一层在硬掩模上，以防止肩下垂。 通过采用这种方法，可以通过蚀刻来实现在硬掩模处的肩部凹陷的程度最小化的双镶嵌结构。

公开(公告)号：US07211197B2

公开(公告)日：2007-05-01

申请号：US10902893

申请日：2004-08-02

Applicant: Masaaki Hagihara ,  Koichiro Inazawa ,  Wakako Naito

Inventor： Masaaki Hagihara ,  Koichiro Inazawa ,  Wakako Naito

IPC: B44C1/22

CPC classification number: H01L21/31138 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76802

Abstract: A processing gas constituted of CH2F2, O2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber 102 is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode. 108 on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNx layer 206 formed on a Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and C and F are not injected into it.

Abstract translation: 由等离子体处理装置100的处理室102引入由CH 2 2 2 O 2 O 2，O 2和Ar构成的处理气体。 处理气体的成分的流量比设定为CH 2/2 / 2/2 / Ar = 20sccm / 10sccm / 100 sccm。 处理室102内的压力设定在50mTorr。 将其频率设定为13.56MHz的500W高频功率施加到下电极。 108，其上放置有晶片W. 处理气体升至等离子体，因此蚀刻在Cu层204上形成的SiN x层206。 暴露的Cu层204几乎不被氧化，并且C和F不被注入其中。

公开(公告)号：US07125806B2

公开(公告)日：2006-10-24

申请号：US10490107

申请日：2002-09-06

Applicant: Akitoshi Harada ,  Koichiro Inazawa

Inventor： Akitoshi Harada ,  Koichiro Inazawa

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/31116 ,  H01L21/76813

Abstract: An etching method comprises a step of forming a via hole structure based on a photoresist film layer (210) for forming a wiring pattern, a silicon oxide film layer (201) which is a hard mask layer formed under the photoresist film, and an organic Low-k film layer (203) formed under the hard mask layer, wherein in the step, the organic film layer and the organic Low-k film layer are etched by using a mixture gas of N2 gas, H2 gas, and a CF gas.

Abstract translation: 蚀刻方法包括形成基于用于形成布线图案的光致抗蚀剂膜层（210）的通孔结构的步骤，作为在光致抗蚀剂膜下形成的硬掩模层的氧化硅膜层（201）和有机 在硬掩模层下形成的低k膜层（203），其中在该步骤中，通过使用N 2气体的混合气体蚀刻有机膜层和有机Low-k膜层 ，H 2气体和CF气体。

公开(公告)号：US20060118517A1

公开(公告)日：2006-06-08

申请号：US10522569

申请日：2003-08-05

Applicant: Shuhei Ogawa ,  Koichiro Inazawa

Inventor： Shuhei Ogawa ,  Koichiro Inazawa

IPC: G01L21/30 ,  C23F1/00

CPC classification number: H01L21/31138 ,  H01L21/31144

Abstract: The present invention is a method of etching a lower layer film (64) of an organic material formed on a surface layer (61) of a substrate, using an upper layer film (63) of an Si-containing organic material as a mask. A mixed gas containing an NH3 gas and an O2 gas is supplied into the processing vessel as an etching gas, so as to perform etching by a plasma of the etching gas. When the etching gas is supplied into the processing vessel, a CD shift value of etching can be controlled by adjusting a flow ratio of O2 gas to the NH3 gas. Specifically, a satisfactory CD shift value can be obtained when the flow ratio is from 0.5 to 20%, and preferably, 5 to 10%.

Abstract translation: 本发明是使用含Si有机材料的上层膜（63）作为掩模，蚀刻在基板的表面层（61）上形成的有机材料的下层膜（64）的方法。 将含有NH 3气体和O 2气体的混合气体作为蚀刻气体供给到处理容器中，以通过蚀刻气体的等离子体进行蚀刻 。 当蚀刻气体被供应到处理容器中时，可以通过调节O 2气体与NH 3气体的流量比来控制蚀刻的CD偏移值。 具体地说，当流量比为0.5〜20％，优选为5〜10％时，可以得到令人满意的CD偏移值。

公开(公告)号：US07030028B2

公开(公告)日：2006-04-18

申请号：US10312292

申请日：2001-06-26

Applicant: Takuya Mori ,  Koichiro Inazawa ,  Noriyuki Kobayashi ,  Masahito Sugiura ,  Yoshihiro Hayashi ,  Keizo Kinoshita

Inventor： Takuya Mori ,  Koichiro Inazawa ,  Noriyuki Kobayashi ,  Masahito Sugiura ,  Yoshihiro Hayashi ,  Keizo Kinoshita

IPC: H01L21/302

CPC classification number: H01L21/76811 ,  H01L21/31138 ,  H01L21/76804 ,  H01L21/76813 ,  H01L21/76834 ,  H01L21/76835

Abstract: A dual damascene structure with a lesser degree of shoulder loss is achieved. In a method for forming a dual damascene structure having a shoulder in an organic low k film layer by dry-etching the organic low k film layer 208 and a mask layer 210 formed over the organic low k film 208 using at least two different mixed gases, a first step in which the mask layer is etched using a first process gas and then the organic low k film layer is etched into a predetermined depth by continuously using the first process gas and a second step following the first step, in which the organic low k film layer is etched using a second process gas are executed. Since a protective wall is formed at a side wall of a via during the first step, the extent of the shoulder loss occurring in the junction region where a trench and a via form a junction can be reduced.

Abstract translation: 实现肩部损失程度较小的双镶嵌结构。 在通过使用至少两种不同的混合气体干法蚀刻有机低k膜层208和形成在有机低k膜208上的掩模层210来形成具有有机低k膜层中的肩部的双镶嵌结构的方法中， 使用第一处理气体蚀刻掩模层然后通过连续使用第一处理气体将有机低k膜层蚀刻到预定深度的第一步骤和第一步骤之后的第二步骤，其中有机 使用第二工艺气体蚀刻低k膜层。 由于在第一步骤中在通孔的侧壁处形成保护壁，所以可以减少在沟槽和通孔形成结的接合区域中发生的肩部损耗的程度。

公开(公告)号：US20050000939A1

公开(公告)日：2005-01-06

申请号：US10902893

申请日：2004-08-02

Applicant: Masaaki Hagihara ,  Koichiro Inazawa ,  Wakako Naito

Inventor： Masaaki Hagihara ,  Koichiro Inazawa ,  Wakako Naito

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H05H1/46 ,  C23F1/00

CPC classification number: H01L21/31138 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76802

Abstract: A processing gas constituted of CH2F2, O2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber 102 is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode. 108 on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNx layer 206 formed on a Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and C and F are not injected into it.

Abstract translation: 将由CH2F2，O2和Ar构成的处理气体引入等离子体处理装置100的处理室102.处理气体的成分的流量比设定为CH2F2 / O2 / Ar = 20sccm / 10sccm / 100 sccm。 处理室102内的压力设定在50mTorr。 将其频率设定为13.56MHz的500W高频功率施加到下电极。 108，其上放置有晶片W. 处理气体升至等离子体，因此蚀刻形成在Cu层204上的SiNx层206。 暴露的Cu层204几乎不被氧化，并且C和F不被注入其中。

公开(公告)号：US5717294A

公开(公告)日：1998-02-10

申请号：US395503

申请日：1995-02-27

Applicant: Itsuko Sakai ,  Makoto Sekine ,  Keiji Horioka ,  Yukimasa Yoshida ,  Koichiro Inazawa ,  Masahiro Ogasawara ,  Yoshio Ishikawa ,  Kazuo Eguchi

Inventor： Itsuko Sakai ,  Makoto Sekine ,  Keiji Horioka ,  Yukimasa Yoshida ,  Koichiro Inazawa ,  Masahiro Ogasawara ,  Yoshio Ishikawa ,  Kazuo Eguchi

IPC: H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K10/00 ,  H05H1/16

CPC classification number: H01J37/32623 ,  H01J37/3266

Abstract: A vacuum chamber contains a first electrode for supporting a wafer, and a second electrode opposing the first electrode. A supply system and an exhaustion system are connected to the vacuum chamber. The system supplies a reactive gas into the chamber, and the system exhaust the used gas from the chamber. A radio-frequency power supply is connected to the first electrode, for supplying power between the electrodes to generate an electric field E. An annular magnet assembly is provided around the chamber, for generating a magnetic field B which has a central plane intersecting with the electric field E. The magnet assembly has a plurality of magnet elements which have different magnetization axes in the central plane of the magnetic field. Electrons drift due to a force resulting from an outer product (E.times.B) of the electric field E and the magnetic field B. The central plane of the magnetic field B is shifted upwards from the target surface of the wafer, such that the magnetic force lines of the magnetic field intersect with the target surface of the substrate.

Abstract translation: 真空室包含用于支撑晶片的第一电极和与第一电极相对的第二电极。 供应系统和耗尽系统连接到真空室。 该系统将反应性气体供应到室中，并且系统从室中排出废气。 射频电源连接到第一电极，用于在电极之间提供电力以产生电场E.环形磁体组件设置在室周围，用于产生磁场B，磁场B具有与中心平面相交的中心平面 电场E.磁体组件具有在磁场的中心平面中具有不同磁化轴的多个磁体元件。 电子由于电场E的外部产物（ExB）和磁场B产生的力而漂移。磁场B的中心平面从晶片的目标表面向上移动，使得磁力线 的磁场与基板的目标表面相交。

公开(公告)号：US5705081A

公开(公告)日：1998-01-06

申请号：US531713

申请日：1995-09-21

Applicant: Koichiro Inazawa ,  Shin Okamoto ,  Yoshifumi Tahara

Inventor： Koichiro Inazawa ,  Shin Okamoto ,  Yoshifumi Tahara

IPC: H05H1/46 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/3065

Abstract: An etching apparatus comprises a pair of electrodes provided to face each other in a processing vessel, a permanent magnet for forming a magnetic field substantially parallel to a surface of a to-be-processed object which is placed between the paired electrodes, a gas introduction section for introducing etching gas into the processing vessel, a high-frequency generator for applying high-frequency voltage to the paired electrodes for generating plasma, and a high-frequency control section for preventing plasma from being unevenly distributed by starting and stopping the application of high-frequency voltage by the high-frequency generator at fixed intervals.

Abstract translation: 蚀刻装置包括在处理容器内设置成彼此相对的一对电极，用于形成基本上平行于被配置在一对电极之间的待处理物体的表面的磁场的永磁体，气体导入 将用于将蚀刻气体引入处理容器的部分，将高频电压施加到用于产生等离子体的成对电极的高频发生器，以及用于通过启动和停止应用来防止等离子体不均匀分布的高频控制部分 高频电压由高频发生器固定间隔。