公开(公告)号：US10606166B2

公开(公告)日：2020-03-31

申请号：US15580331

申请日：2016-06-08

Applicant: HOYA CORPORATION

Inventor： Takumi Kobayashi ,  Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Tsutomu Shoki

IPC: G03F1/40 ,  G03F1/24 ,  G03F1/54

Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.

公开(公告)号：US10295900B2

公开(公告)日：2019-05-21

申请号：US15980783

申请日：2018-05-16

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  G03F1/48 ,  C03C3/06 ,  G02B5/08 ,  G03F7/16 ,  G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  C03C17/34 ,  C03C17/36 ,  C03C23/00 ,  H01L21/308

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.

公开(公告)号：US09535318B2

公开(公告)日：2017-01-03

申请号：US15179030

申请日：2016-06-10

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Osamu Maruyama ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜，保护膜，吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L（ML），则从基板的中心到保护膜的外周端的距离为L（Cap）， 从基板的中心到吸收膜的外周端的距离为L（Abs），并且从基板的中心到抗蚀剂膜的外周端的距离为L（Res），L （Ab）> L（Res）> L（Cap）≥L（ML），并且抗蚀剂膜的外周端位于衬底的外周端的内侧。

公开(公告)号：US20160041462A1

公开(公告)日：2016-02-11

申请号：US14919994

申请日：2015-10-22

Applicant: HOYA CORPORATION

Inventor： Toshihiko ORIHARA ,  Akihiro Kawahara ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/60

CPC classification number: G03F1/24 ,  G03F1/38 ,  G03F1/60

Abstract: Provided is a mask blank glass substrate that has high surface smoothness, that is formed with a fiducial mark capable of improving the detection accuracy of a defect position or the like, and that enables reuse or recycling of a glass substrate included therein. An underlayer is formed on a main surface, on the side where a transfer pattern is to be formed, of a glass substrate for a mask blank. The underlayer serves to reduce surface roughness of the main surface of the glass substrate or to reduce defects of the main surface of the glass substrate. A surface of the underlayer is a precision-polished surface. A fiducial mark which provides a reference for a defect position in defect information is formed on the underlayer.

公开(公告)号：US09195131B2

公开(公告)日：2015-11-24

申请号：US13630622

申请日：2012-09-28

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Akihiro Kawahara ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/38 ,  G03F1/60

CPC classification number: G03F1/24 ,  G03F1/38 ,  G03F1/60

Abstract: Provided is a mask blank glass substrate that has high surface smoothness, that is formed with a fiducial mark capable of improving the detection accuracy of a defect position or the like, and that enables reuse or recycling of a glass substrate included therein. An underlayer is formed on a main surface, on the side where a transfer pattern is to be formed, of a glass substrate for a mask blank. The underlayer serves to reduce surface roughness of the main surface of the glass substrate or to reduce defects of the main surface of the glass substrate. A surface of the underlayer is a precision-polished surface. A fiducial mark which provides a reference for a defect position in defect information is formed on the underlayer.

Abstract translation: 提供了具有高表面平滑度的掩模坯料玻璃基板，其形成有能够提高缺陷位置等的检测精度的基准标记，并且能够重复利用或再循环包含在其中的玻璃基板。 在掩模坯料用玻璃基板的主表面上形成有转印图案的一侧的底层形成。 底层用于降低玻璃基板的主表面的表面粗糙度或减少玻璃基板的主表面的缺陷。 底层的表面是精密抛光的表面。 在缺陷信息中提供缺陷位置的基准的基准标记形成在底层上。

公开(公告)号：US12072619B2

公开(公告)日：2024-08-27

申请号：US17609166

申请日：2020-06-18

Applicant: HOYA CORPORATION

Inventor： Masanori Nakagawa ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/46 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/46 ,  G03F7/2004

Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank (100) comprises a substrate (1), a multilayer reflection film (2) on the substrate, and an absorber film (4) on the multilayer reflection film. The reflective mask blank (100) is characterized in that: the absorber film (4) includes an absorption layer (42) and a reflectance adjustment layer (44); the absorption layer (42) contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer (42) includes a lower surface region (46) including a surface on the substrate side, and an upper surface region (48) including a surface on the side opposite to the substrate; and the concentration (at. %) of the added element in the lower surface region (46) and the concentration (at. %) of the added element in the upper surface region (48) are different.

公开(公告)号：US11815807B2

公开(公告)日：2023-11-14

申请号：US17990163

申请日：2022-11-18

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Tsutomu Shoki

IPC: G03F1/32 ,  G03F1/24

CPC classification number: G03F1/32 ,  G03F1/24

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

公开(公告)号：US11249385B2

公开(公告)日：2022-02-15

申请号：US16477771

申请日：2018-01-16

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/26 ,  G03F7/20

Abstract: Provided are a reflective mask blank and a reflective mask that are capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank has a multilayer reflective film and a phase shift film that causes a shift in the phase of EUV light on a substrate in that order, wherein the phase shift film comprises a single layer film or multilayer film of two or more layers and is made of a material comprising tantalum (Ta) and titanium (Ti).

公开(公告)号：US10429728B2

公开(公告)日：2019-10-01

申请号：US15824227

申请日：2017-11-28

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  G03F1/60 ,  G03F1/50 ,  G03F7/20 ,  H01L21/033

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≥350 (%/nm), and has a maximum height (Rmax)≤1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

公开(公告)号：US10001699B2

公开(公告)日：2018-06-19

申请号：US15275719

申请日：2016-09-26

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  C03C3/06 ,  G03F1/48 ,  G02B5/08 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/20 ,  C03C17/34 ,  C03C17/36 ,  C03C23/00 ,  G03F7/16 ,  H01L21/308

CPC classification number: G03F1/48 ,  B82Y10/00 ,  B82Y40/00 ,  C03C3/06 ,  C03C17/3435 ,  C03C17/3626 ,  C03C17/3636 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3665 ,  C03C23/0075 ,  C03C2201/42 ,  C03C2218/33 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G03F1/22 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/70733 ,  H01L21/3081 ,  H01L21/3085

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.