SEMICONDUCTOR DEVICE INSPECTION DEVICE AND SEMICONDUCTOR DEVICE INSPECTION METHOD
    42.
    发明申请
    SEMICONDUCTOR DEVICE INSPECTION DEVICE AND SEMICONDUCTOR DEVICE INSPECTION METHOD 有权
    半导体器件检测器件和半导体器件检测方法

    公开(公告)号:US20150377959A1

    公开(公告)日:2015-12-31

    申请号:US14764246

    申请日:2014-01-30

    Abstract: A semiconductor device inspection system includes a laser beam source, a tester, an optical sensor, a first spectrum analyzer for measuring first phase information serving as phase information of the detection signal, a reference signal generating unit for generating a reference signal of a predetermined frequency, a second spectrum analyzer for measuring second phase information serving as phase information of a reference signal, and an analysis unit for deriving phase information of the detection signal at the predetermined frequency, wherein the first spectrum analyzer measures the first phase information with respect to the reference frequency, the second spectrum analyzer measures the second phase information with respect to the reference frequency, and the frequency of the base signal of the first spectrum analyzer and the phase thereof are synchronized with the frequency of the base signal of the second spectrum analyzer and the phase thereof.

    Abstract translation: 半导体器件检查系统包括激光束源,测试器,光学传感器,用于测量用作检测信号的相位信息的第一相位信息的第一频谱分析仪,用于产生预定频率的参考信号的参考信号产生单元 用于测量用作参考信号的相位信息的第二相位信息的第二频谱分析器和用于以预定频率导出检测信号的相位信息的分析单元,其中第一频谱分析仪测量关于第一相位信息的第一相位信息, 参考频率,第二频谱分析仪测量相对于参考频率的第二相位信息,并且第一频谱分析仪的基本信号的频率及其相位与第二频谱分析仪的基本信号的频率同步, 其相位。

    ELECTRIC FIELD CONCENTRATION LOCATION OBSERVATION DEVICE AND ELECTRIC FIELD CONCENTRATION LOCATION OBSERVATION METHOD
    43.
    发明申请
    ELECTRIC FIELD CONCENTRATION LOCATION OBSERVATION DEVICE AND ELECTRIC FIELD CONCENTRATION LOCATION OBSERVATION METHOD 有权
    电场浓度位置观测装置和电场浓度位置观测方法

    公开(公告)号:US20150377953A1

    公开(公告)日:2015-12-31

    申请号:US14767723

    申请日:2014-02-13

    Abstract: An observation apparatus includes a laser light source, a scanning optical system irradiating a semiconductor device with laser light output from the laser light source, a bias power supply applying a reverse bias voltage of a predetermined voltage between electrodes of the semiconductor device, a sensor detecting an electrical property occurring in the semiconductor device in response to the laser light, and a control system generating an electrical property image of the semiconductor device based on a detection signal from the sensor. The bias power supply gradually increases a magnitude of the predetermined voltage until the predetermined voltage reaches a voltage at which avalanche amplification occurs in the semiconductor device. When the predetermined voltage is increased, the scanning optical system irradiates with the laser light, the sensor detects the electrical property, and the control system generates the electrical property image.

    Abstract translation: 观察装置包括激光光源,从激光光源输出的激光照射半导体器件的扫描光学系统,在半导体器件的电极之间施加预定电压的反向偏置电压的偏置电源,传感器检测 响应于激光在半导体器件中发生的电特性,以及基于来自传感器的检测信号产生半导体器件的电性能图像的控制系统。 偏置电源逐渐增加预定电压的大小,直到预定电压达到在半导体器件中发生雪崩放大的电压。 当预定电压增加时,扫描光学系统用激光照射,传感器检测电气特性,并且控制系统产生电性能图像。

    INSPECTION APPARATUS AND INSPECTION METHOD
    45.
    发明公开

    公开(公告)号:US20240302292A1

    公开(公告)日:2024-09-12

    申请号:US18664848

    申请日:2024-05-15

    CPC classification number: G01N21/956 G01B11/272 G01N21/64 G01N2021/95638

    Abstract: An inspection apparatus includes a light source unit, cameras, a keyboard, and a controller that determines a wavelength of the excitation light, based on the information on the emission color received by the keyboard, and that controls the light source unit so that the light source unit generates excitation light with the determined wavelength. The controller determines a wavelength longer than an absorption edge wavelength of the substrate of the sample and shorter than a peak wavelength of an emission spectrum of the light-emitting element, the peak wavelength being specified from the information on the emission color, to be the wavelength of the excitation light.

    DISTANCE MEASUREMENT DEVICE
    46.
    发明公开

    公开(公告)号:US20230324550A1

    公开(公告)日:2023-10-12

    申请号:US18104326

    申请日:2023-02-01

    CPC classification number: G01S17/32 G01S7/4808 G01S7/4811

    Abstract: A device includes a signal generation unit that generates a first signal having a first repetition frequency and a second signal having a second repetition frequency higher than the first repetition frequency, a light source unit that generates light whose wavelength is modulated with time through internal modulation based on the first signal, a modulation unit that further modulates, with time, the wavelength of the light using a Doppler effect through external modulation based on the second signal, a splitting unit that divides the light output from the modulation unit into measurement light and reference light, an irradiation unit that irradiates a target object with the measurement light, a detection unit that detects interference light between reflected light from the target object and the reference light, and a calculation unit that calculates a distance to the target object on the basis of an output signal from the detection unit.

    LIGHT SOURCE DEVICE AND DISTANCE MEASUREMENT DEVICE

    公开(公告)号:US20230324520A1

    公开(公告)日:2023-10-12

    申请号:US18104340

    申请日:2023-02-01

    CPC classification number: G01S7/4817 G01S17/34

    Abstract: A light source device includes a light source that generates continuous light, a retroreflective material that retroreflects a light beam from the light source, an optical system that guides the light beam from the light source to the retroreflective material and output the light beam retroreflected from the retroreflective material to the outside, and a modulation unit that is disposed in the optical system, changes an optical path length between the light source and the retroreflective material with time, and changes a wavelength of the light beam with time using a Doppler effect.

    SEMICONDUCTOR WAFER
    48.
    发明申请
    SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号:US20200174074A1

    公开(公告)日:2020-06-04

    申请号:US16631528

    申请日:2018-06-13

    Abstract: There is provided a semiconductor wafer suitable for the inspection of an operation state.A wafer is a semiconductor wafer having a plurality of chip forming regions, and includes a memory cell that is formed in each of the chip forming regions and an inspection device that is formed in each of the chip forming regions. The inspection device has a photodiode that receives an input of pump light for checking an operation of the memory cell and outputs an electrical signal corresponding to the pump light and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell.

    ANALYSIS SYSTEM AND ANALYSIS METHOD
    49.
    发明申请

    公开(公告)号:US20190265179A1

    公开(公告)日:2019-08-29

    申请号:US16406478

    申请日:2019-05-08

    Abstract: A heat source position inside a measurement object is identified with high accuracy by improving time resolution.An analysis system according to the present invention is an analysis system that identifies a heat source position inside a measurement object, and includes a condition setting unit that sets a measurement point for one surface of the measurement object, a tester that applies a stimulation signal to the measurement object, a light source that irradiates the measurement point of the measurement object with light, a photo detector that detects light reflected from a predetermined measurement point on the surface of the measurement object according to the irradiation of light and outputs a detection signal, and an analysis unit that derives a distance from the measurement point to the heat source position based on the detection signal and the stimulation signal and identifies the heat source position.

    SEMICONDUCTOR DEVICE INSPECTION DEVICE AND SEMICONDUCTOR DEVICE INSPECTION METHOD

    公开(公告)号:US20170176521A1

    公开(公告)日:2017-06-22

    申请号:US15447525

    申请日:2017-03-02

    Abstract: A semiconductor device inspection system includes a laser light source for generating light to be irradiated a semiconductor device, an optical sensor for detecting the light reflected by the semiconductor device and outputting the detection signal, a tester unit for applying a operating signal to the semiconductor device, an electricity measurement unit to which the detection signal is input, an electricity measurement unit to which the detection signal and the operating signal are selectively input, and a switching unit having a detection signal terminal and a operating signal terminal. The switching unit inputs the detection signal to the electricity measurement unit by connecting a connection section to the detection signal terminal and inputs the operating signal by connecting the connection section to the operating signal terminal.

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