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    Thin film transistor and method of manufacturing the same, array substrate and display device
    42.
    发明授权
    Thin film transistor and method of manufacturing the same, array substrate and display device 有权

    公开(公告)号：US09748276B2

    公开(公告)日：2017-08-29

    申请号：US14769438

    申请日：2014-10-21

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Feng Zhang ,  Zhanfeng Cao ,  Qi Yao

    IPC: H01L27/12 ,  H01L29/78 ,  H01L29/22 ,  H01L21/16 ,  H01L21/00 ,  H01L29/24 ,  H01L21/47 ,  H01L29/786

    CPC classification number: H01L27/1225 ,  H01L27/127 ,  H01L29/22 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

    Abstract: The present invention discloses a thin film transistor, comprising a gate electrode (2), a gate insulating layer (3), and active layer (4), and etching barrier layer (7), a source electrode and a drain electrode, wherein the source electrode comprises a first source electrode (5) and a second source electrode (8) electrically connected therewith, the drain electrode comprises a first drain electrode (6) and a second drain electrode (9) electrically connected therewith, the first source electrode and first drain electrode are formed on the active layer, the etching barrier layer at least covers a portion of the active layer between the first source electrode and the first drain electrode, and respectively covers portions of the first source electrode (5) and the first drain electrode (6) adjacent to each other, and the second source electrode and the second drain electrode are formed on the etching barrier layer. The present invention further discloses a method of manufacturing a thin film transistor, an array substrate and a display device both comprising the thin film transistor. The thin film transistor formed according to the present invention has a short channel length, which increases an on-state current of the thin film transistor while improving ohmic contact between the source and drain electrodes and the active layer, thereby increasing the stability of the thin film transistor.

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
    47.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE 有权
    薄膜晶体管及其制造方法，阵列基板和显示装置

    公开(公告)号：US20160247830A1

    公开(公告)日：2016-08-25

    申请号：US14769438

    申请日：2014-10-21

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Feng Zhang ,  Zhanfeng Cao ,  Qi Yao

    IPC: H01L27/12 ,  H01L29/22 ,  H01L29/786

    CPC classification number: H01L27/1225 ,  H01L27/127 ,  H01L29/22 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

    Abstract: The present invention discloses a thin film transistor, comprising a gate electrode (2), a gate insulating layer (3), and active layer (4), and etching barrier layer (7), a source electrode and a drain electrode, wherein the source electrode comprises a first source electrode (5) and a second source electrode (8) electrically connected therewith, the drain electrode comprises a first drain electrode (6) and a second drain electrode (9) electrically connected therewith, the first source electrode and first drain electrode are formed on the active layer, the etching barrier layer at least covers a portion of the active layer between the first source electrode and the first drain electrode, and respectively covers portions of the first source electrode (5) and the first drain electrode (6) adjacent to each other, and the second source electrode and the second drain electrode are formed on the etching barrier layer. The present invention further discloses a method of manufacturing a thin film transistor, an array substrate and a display device both comprising the thin film transistor. The thin film transistor formed according to the present invention has a short channel length, which increases an on-state current of the thin film transistor while improving ohmic contact between the source and drain electrodes and the active layer, thereby increasing the stability of the thin film transistor.

    Abstract translation: 本发明公开了一种薄膜晶体管，包括栅极（2），栅极绝缘层（3）和有源层（4），以及蚀刻阻挡层（7），源电极和漏电极，其中 源电极包括与其电连接的第一源电极（5）和第二源电极（8），所述漏电极包括与其电连接的第一漏电极（6）和第二漏电极（9），所述第一源极和 第一漏电极形成在有源层上，蚀刻阻挡层至少覆盖第一源极和第一漏极之间的有源层的一部分，并且分别覆盖第一源电极（5）和第一漏极 彼此相邻的电极（6），以及第二源电极和第二漏电极形成在蚀刻阻挡层上。 本发明还公开了一种制造薄膜晶体管的方法，阵列基板和包括薄膜晶体管的显示装置。 根据本发明形成的薄膜晶体管具有短的沟道长度，其增加了薄膜晶体管的导通电流，同时改善了源极和漏极和有源层之间的欧姆接触，从而提高了薄膜晶体管的稳定性 薄膜晶体管。

    Array substrate, method for manufacturing the same and display device
    48.
    发明授权
    Array substrate, method for manufacturing the same and display device 有权
    阵列基板，制造方法及显示装置

    公开(公告)号：US09368635B2

    公开(公告)日：2016-06-14

    申请号：US13981165

    申请日：2012-11-15

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Tianming Dai ,  Qi Yao ,  Feng Zhang ,  Zhanfeng Cao

    IPC: H01L29/786 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

    CPC classification number: H01L29/78606 ,  H01L21/02304 ,  H01L21/02365 ,  H01L21/76841 ,  H01L21/8234 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/22 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A manufacturing method of an array substrate, comprising the following steps: S1: forming a pattern comprising a semiconductor layer (2), a gate insulating layer (4), a gate electrode (5) and a gate line on a substrate (1); S2: on the substrate (1) subjected to the step S1, forming a metal diffusion layer (3) on the pattern of the semiconductor layer (2) which is not covered by the gate insulating layer (4) and forming a barrier layer (6) in other regions; S3: forming a passivation layer (7) on the substrate (1) subjected to the step S2; and S4: forming a pattern of via holes (11), source and drain electrodes (81, 82), a data line and a pixel electrode (9) on the passivation layer (7), the source and drain electrodes (81, 82) being which being connected to the metal diffusion layer (3) through the via holes (11) respectively. With this method, the process flow is simplified, and the process costs are reduced.

    Abstract translation: 阵列基板的制造方法，包括以下步骤：S1：在基板（1）上形成包括半导体层（2），栅极绝缘层（4），栅电极（5）和栅极线的图案， ; S2：在经过步骤S1的基板（1）上，在未被栅极绝缘层（4）覆盖并形成阻挡层（4）的半导体层（2）的图案上形成金属扩散层（3） 6）其他地区; S3：在经过步骤S2的基板（1）上形成钝化层（7）; 和S4：在钝化层（7）上形成通孔（11），源极和漏极（81,82），数据线和像素电极（9）的图案，源极和漏极（81,82 ）分别通过通孔（11）连接到金属扩散层（3）。 通过这种方法，简化了工艺流程，降低了工艺成本。

    Array substrate and method for fabricating the same, and display device
    49.
    发明授权
    Array substrate and method for fabricating the same, and display device 有权
    阵列基板及其制造方法及显示装置

    公开(公告)号：US09356055B2

    公开(公告)日：2016-05-31

    申请号：US14447928

    申请日：2014-07-31

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Chuanxiang Xu ,  Shi Shu ,  Yonglian Qi ,  Feng Zhang

    IPC: H01L27/12

    CPC classification number: H01L27/1262 ,  G02F1/136227 ,  G02F2001/136222 ,  H01L27/124

    Abstract: The present invention discloses an array substrate and a manufacturing method for the same, and a display device. By adopting the manufacturing method for the array substrate provided by the embodiments of the present invention, via holes with relatively small hole sizes in a color resin layer are realized, so that the aperture ratio of pixels is improved. The manufacturing method for the array substrate includes: forming thin film transistors on a substrate; forming a color resin layer on the substrate on which the thin film transistors are formed; forming a first light-blocking layer with a light-shielding effect on the color resin layer, the photolithographic resolution of the first light-blocking layer being greater than that of the color resin layer; and performing a patterning process on the first light-blocking layer and the color resin layer to form via holes in the color resin layer.

    Abstract translation: 本发明公开了一种阵列基板及其制造方法以及显示装置。 通过采用由本发明实施例提供的阵列基板的制造方法，可以实现在彩色树脂层中具有较小孔尺寸的通孔，从而提高像素的开口率。 阵列基板的制造方法包括：在基板上形成薄膜晶体管; 在其上形成有薄膜晶体管的基板上形成着色树脂层; 在着色树脂层上形成具有遮光效果的第一遮光层，第一遮光层的光刻分辨率大于着色树脂层的光刻分辨率; 并对第一遮光层和着色树脂层进行图案化处理，以在着色树脂层中形成通孔。

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