See-through display device and manufacturing method thereof

    公开(公告)号:US11953680B2

    公开(公告)日:2024-04-09

    申请号:US17311477

    申请日:2020-12-29

    CPC classification number: G02B27/0101 G02B2027/0118

    Abstract: This disclosure relates to a see-through display device, including: a collimated light source assembly, configured to form collimated light and control a light emitting direction; a first light extraction layer, configured to extract, in a collimated manner, the light ray transmitted inside the light guide plate through a light extraction outlet; an extinction layer and a second light extraction layer, wherein the extinction layer includes a light guide region and a light absorption region which are arranged alternately, and the second light extraction layer includes multiple light extraction inlets; a reflecting layer, arranged on a side, close to the light guide plate, of the second light extraction layer and configured to reflect the collimated light extracted from the light extraction outlet to the light guide plate; and a liquid crystal dimming layer. This disclosure further relates to a manufacturing method of the see-through display device.

    Micro total analysis system, operating method and manufacturing method thereof

    公开(公告)号:US11703478B2

    公开(公告)日:2023-07-18

    申请号:US16957614

    申请日:2019-07-18

    CPC classification number: G01N29/022 G01N2291/0228

    Abstract: A micro total analysis system, operating method and manufacturing method thereof are provided. The micro total analysis system includes at least one micro total analysis unit each including: microfluidic device including first electrode and dielectric layer connected to each other, where the dielectric layer drives to-be-measured droplet to move based on voltage of the first electrode; and acoustic wave detection device including second electrode connected to the dielectric layer, where the dielectric layer is also used as transducer of the acoustic wave detection device, and configured to generate acoustic wave toward the droplet based on voltage of the second electrode, and generate a detection result corresponding to the droplet based on received acoustic wave. The micro total analysis system, the operating method and the manufacturing method thereof enables the microfluidic device and the acoustic wave detection device to be integrated in the same chip.

    DISPLAY PANEL, DISPLAY APPARATUS, AND METHOD OF FABRICATING THE DISPLAY PANEL

    公开(公告)号:US20220285467A1

    公开(公告)日:2022-09-08

    申请号:US17751456

    申请日:2022-05-23

    Abstract: A method of fabricating a display panel includes forming a first conductive layer on a base substrate, wherein the first conductive layer is formed in an encapsulated area and a peripheral area of the display panel; forming an organic insulating layer on a side of the first conductive layer away from the base substrate, wherein the organic insulating layer is formed to be limited in the encapsulated area; forming a first inorganic insulating layer on a side of the organic insulating layer away from the base substrate; forming a second conductive layer on a side of the organic insulating layer and the first inorganic insulating layer away from the base substrate, wherein the second conductive layer is formed in the encapsulated area and the peripheral area; and forming a second inorganic insulating layer, the second inorganic insulating layer formed between the organic insulating layer and the first conductive layer.

    Array substrate, display apparatus, and method of fabricating array substrate

    公开(公告)号:US11387308B2

    公开(公告)日:2022-07-12

    申请号:US16071681

    申请日:2017-12-11

    Abstract: The present application discloses an array substrate having a plurality of first thin film transistors and a plurality of second thin film transistors. Each of the plurality of first thin film transistors includes a silicon active layer. The array substrate includes a base substrate; a silicon layer having a plurality of silicon active layers respectively for the plurality of first thin film transistors; and a UV absorption layer on a side of the silicon layer distal to the base substrate, and including a plurality of UV absorption blocks. Each of the plurality of UV absorption blocks is on a side of the one of the plurality of silicon active layers distal to the base substrate, and is insulated from the one of the plurality of silicon active layers.

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