Drift tube electrode arrangement having direct current optics

    公开(公告)号:US12096548B2

    公开(公告)日:2024-09-17

    申请号:US17949862

    申请日:2022-09-21

    CPC classification number: H05H7/22 H05H7/02 H05H2007/025 H05H2007/222

    Abstract: An apparatus may include a drift tube assembly having a plurality of drift tubes to conduct an ion beam along a beam propagation direction. The plurality of drift tubes may define a multi-gap configuration corresponding to a plurality of acceleration gaps, wherein at least one powered drift tube of the drift tube assembly is coupled to receive an RF voltage signal. The apparatus may also include a DC electrode assembly that includes a conductor line, arranged within a resonator coil that is coupled to receive a DC voltage signal into the at least one powered drift tube. The DC electrode assembly may also include a DC electrode arrangement, connected to the conductor line and disposed within the at least one powered drift tube.

    Dual XY variable aperture in an ion implantation system

    公开(公告)号:US11574796B1

    公开(公告)日:2023-02-07

    申请号:US17382041

    申请日:2021-07-21

    Abstract: An aperture diaphragm capable of varying the size of an aperture in two dimensions is disclosed. The aperture diaphragm may be utilized in an ion implantation system, such as between the mass analyzer and the acceleration column. In this way, the aperture diaphragm may be used to control at least one parameter of the ion beam. These parameters may include angular spread in the height direction, angular spread in the width direction, beam current or cross-sectional area. Various embodiments of the aperture diaphragm are shown. In certain embodiments, the size of the aperture in the height and width directions may be independently controlled, while in other embodiments, the ratio between height and width is constant.

    ION IMPLANTATION SYSTEM AND LINEAR ACCELERATOR HAVING NOVEL ACCELERATOR STAGE CONFIGURATION

    公开(公告)号:US20220037116A1

    公开(公告)日:2022-02-03

    申请号:US16984053

    申请日:2020-08-03

    Inventor: Frank Sinclair

    Abstract: An ion implantation system, including an ion source and extraction system, arranged to generate an ion beam at a first energy, and a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive the ion beam as a bunched ion beam accelerate the ion beam to a second energy, greater than the first energy. The linear accelerator may include a plurality of acceleration stages, wherein a given acceleration stage of the plurality of acceleration stages comprises: a drift tube assembly, arranged to conduct the ion beam; a resonator, electrically coupled to the drift tube assembly; and an RF power assembly, coupled to the resonator, and arranged to output an RF signal to the resonator. As such, the given acceleration stage does not include a quadrupole element.

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