公开(公告)号：US08427791B2

公开(公告)日：2013-04-23

申请号：US12953233

申请日：2010-11-23

Applicant: Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Sangmun Oh ,  Chando Park ,  Chang-Man Park

Inventor： Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Sangmun Oh ,  Chando Park ,  Chang-Man Park

IPC: G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121

Abstract: According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.

Abstract translation: 根据一个实施例，磁头包括具有晶体结构的阻挡层，阻挡层上方的第一磁性层，第一磁性层上方的磁性插入层和磁性插入层上方的第二磁性层，第二磁性层 层具有纹理的面心立方（fcc）结构。 第一磁性层包括具有晶体结构的高自旋极化磁性材料，并且与第二磁性层的结晶结构相比，结晶的结晶特性与阻挡层的晶体结构更相似，并且磁性插入层包括具有 与阻挡层的晶体结构相比，晶体结构和结晶特性更类似于第二磁性层的晶体结构。 根据更多实施例描述附加的磁头结构和制造磁头的方法。

公开(公告)号：US20130095690A1

公开(公告)日：2013-04-18

申请号：US13492905

申请日：2012-06-10

Applicant: Min Chul Kim ,  John DiFonzo ,  Nathan N. Ng ,  Chris Liqtenberg ,  Bradley Hamel ,  Rian Leichter ,  Sridhar Sundaram ,  Josh Pong ,  Vince Duperron ,  Zheng Gao

Inventor： Min Chul Kim ,  John DiFonzo ,  Nathan N. Ng ,  Chris Liqtenberg ,  Bradley Hamel ,  Rian Leichter ,  Sridhar Sundaram ,  Josh Pong ,  Vince Duperron ,  Zheng Gao

IPC: H01R13/62

CPC classification number: H01R13/2471 ,  H01R13/17 ,  H01R13/2421 ,  H01R13/62

Abstract: Spring-loaded contacts having an improved reliability. One example may provide spring-loaded contacts having a reduced likelihood of entanglement between a spring and a plunger. For example, a piston may be placed between a plunger and a spring. The piston may have a head portion that is wider than the diameter of the spring and located between the spring and the plunger to isolate the spring and the plunger. In these and other examples, an additional object, such as a sphere, may be placed between the plunger and spring. In another example, two additional objects, such as two spheres, may be placed between a plunger and piston.

公开(公告)号：US20130021697A1

公开(公告)日：2013-01-24

申请号：US13354838

申请日：2012-01-20

Applicant: Dimitar V. Dimitrov ,  Zheng Gao ,  Wonjoon Jung ,  Paul Edward Anderson ,  Olle Gunnar Heinonen

Inventor： Dimitar V. Dimitrov ,  Zheng Gao ,  Wonjoon Jung ,  Paul Edward Anderson ,  Olle Gunnar Heinonen

IPC: G11B5/127

CPC classification number: G11B5/398 ,  G01R33/098 ,  G11B5/3912 ,  H01L43/08

Abstract: A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element having a free magnetization orientation direction substantially perpendicular to the reference magnetization orientation direction. A non-magnetic spacer layer separates the reference magnetic element from the free magnetic element. A first side magnetic shield and a second side magnetic shield is disposed between the top magnetic shield from a bottom magnetic shield, and the sensor stack is between the first side magnetic shield and the second side magnetic shield. The first side magnetic shield and the second side magnetic shield electrically insulates the top magnetic shield from a bottom magnetic shield.

Abstract translation: 隧道磁阻读取器包括将顶部磁屏蔽与底部磁屏蔽分开的传感器堆叠。 传感器堆叠包括具有参考磁化取向方向的参考磁性元件和具有基本上垂直于参考磁化定向方向的自由磁化取向方向的自由磁性元件。 非磁性间隔层将参考磁性元件与自由磁性元件分开。 第一侧磁屏蔽和第二侧磁屏蔽设置在顶部磁屏蔽与底部磁屏蔽之间，传感器堆叠位于第一侧磁屏蔽和第二侧磁屏蔽之间。 第一侧磁屏蔽和第二侧磁屏蔽将顶部磁屏蔽与底部磁屏蔽电绝缘。

公开(公告)号：US20130001718A1

公开(公告)日：2013-01-03

申请号：US13611230

申请日：2012-09-12

Applicant: Yuankai Zheng ,  Dimitar V. Dimitrov ,  Wei Tian ,  Dexin Wang ,  Zheng Gao ,  Xiaobin Wang

Inventor： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Wei Tian ,  Dexin Wang ,  Zheng Gao ,  Xiaobin Wang

IPC: H01L29/82

CPC classification number: G11C11/161

Abstract: Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.

Abstract translation: 公开了具有镜面绝缘间隔物的磁隧道结。 磁性隧道结包括自由磁性层，参考磁性层，将自由磁性层与参考磁性层分离的电绝缘和非磁性隧道势垒层，以及电绝缘和电子反射层，其被定位成反射至少一个 部分电子返回自由磁性层。

公开(公告)号：US20120127615A1

公开(公告)日：2012-05-24

申请号：US12954334

申请日：2010-11-24

Applicant: Liubo Hong ,  Honglin Zhu ,  Tsann Lin ,  Zheng Gao

Inventor： Liubo Hong ,  Honglin Zhu ,  Tsann Lin ,  Zheng Gao

IPC: G11B5/33 ,  G01R33/32

CPC classification number: G11B5/3912 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3932

Abstract: The present invention generally relates to a TMR reader and a method for its manufacture. The TMR reader discussed herein adds a shield layer to the sensor structure. The shield layer is deposited over the capping layer so that the shield layer and the capping layer collectively protect the free magnetic layer within the sensor structure from damage during further processing. Additionally, the hard bias layer is shaped such that the entire hard bias layer underlies the hard bias capping layer so that a top lead layer is not present. By eliminating the top lead layer and including a shield layer within the sensor structure, the read gap is reduced while still protecting the free magnetic layer during later processing.

Abstract translation: 本发明一般涉及TMR读取器及其制造方法。 本文中讨论的TMR读取器将一个屏蔽层添加到传感器结构。 屏蔽层沉积在覆盖层上，使得屏蔽层和覆盖层共同保护传感器结构内的自由磁性层免受进一步处理期间的损坏。 此外，硬偏压层被成形为使得整个硬偏压层位于硬偏压覆盖层的下面，使得顶部引线层不存在。 通过消除顶部引线层并且在传感器结构内包括屏蔽层，读取间隙减小，同时在稍后处理期间仍然保护自由磁性层。

公开(公告)号：US08111505B2

公开(公告)日：2012-02-07

申请号：US12580922

申请日：2009-10-16

Applicant: John Raff ,  Bartley K. Andre ,  Laura DeForest ,  John C. DiFonzo ,  Zheng Gao ,  Michelle Goldberg ,  Bradley J. Hamel ,  Timothy S. Hibbard ,  Ron Hopkinson ,  William F. Leggett ,  Chris Ligtenberg ,  Gavin J. Reid ,  Charles A. Schwalbach

Inventor： John Raff ,  Bartley K. Andre ,  Laura DeForest ,  John C. DiFonzo ,  Zheng Gao ,  Michelle Goldberg ,  Bradley J. Hamel ,  Timothy S. Hibbard ,  Ron Hopkinson ,  William F. Leggett ,  Chris Ligtenberg ,  Gavin J. Reid ,  Charles A. Schwalbach

IPC: G06F1/16

CPC classification number: G06F1/1633 ,  G06F1/1616 ,  G06F1/1637 ,  G06F1/1656 ,  G06F1/1658 ,  H05K5/0243 ,  Y10T29/49826

Abstract: A multipart computer housing is described. The multipart computer housing includes at least a structural support layer and a body. The body includes at least an outer layer formed of lightweight flexible material and an inner layer attached to the outer layer. The inner layer is connected to the support layer forming a load path between the inner layer and the structural support layer. A load applied to the multipart computer housing is transferred by way of the load path to the support layer without substantially affecting the outer layer.

Abstract translation: 描述了多部分计算机外壳。 多部分计算机外壳至少包括结构支撑层和主体。 该主体至少包括由轻质柔性材料形成的外层和连接到外层的内层。 内层连接到支撑层，形成内层和结构支撑层之间的载荷路径。 施加到多部分计算机外壳的负载通过负载路径传递到支撑层而基本上不影响外层。

公开(公告)号：US20120021535A1

公开(公告)日：2012-01-26

申请号：US13248360

申请日：2011-09-29

Applicant: Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

Inventor： Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

IPC: H01L21/02

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/303 ,  H01L43/12

Abstract: A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

公开(公告)号：US20110164335A1

公开(公告)日：2011-07-07

申请号：US13048521

申请日：2011-03-15

Applicant: Song S. Xue ,  Zheng Gao ,  Shaoping Li ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Konstantin Nikolaev ,  Patrick J. Ryan

Inventor： Song S. Xue ,  Zheng Gao ,  Shaoping Li ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Konstantin Nikolaev ,  Patrick J. Ryan

IPC: G11B5/127

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

Abstract: A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.

Abstract translation: 磁传感器包括具有第一磁化方向的参考层和具有基本上垂直于第一磁化方向并且基本上垂直于自由层组件的每个层的平面的有效磁化方向的自由层组件。 间隔层位于参考层和自由层之间，信号增强层与隔离层相对的一侧交换耦合到自由层组件。

公开(公告)号：US07936598B2

公开(公告)日：2011-05-03

申请号：US12431162

申请日：2009-04-28

Applicant: Yuankai Zheng ,  Zheng Gao ,  Wonjoon Jung ,  Xuebing Feng ,  Xiaohua Lou ,  Haiwen Xi

Inventor： Yuankai Zheng ,  Zheng Gao ,  Wonjoon Jung ,  Xuebing Feng ,  Xiaohua Lou ,  Haiwen Xi

IPC: G11C11/15

CPC classification number: H01L43/02 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/08

Abstract: A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.

Abstract translation: 一种具有铁磁自由层和铁磁性固定参考层的磁存储单元，每个具有面外磁各向异性和面外磁化取向，并可通过自旋转矩切换。 电池包括靠近自由层的铁磁辅助层，辅助层具有小于约500Oe的低磁各向异性。 辅助层可具有面内或面外各向异性。

公开(公告)号：US07929259B2

公开(公告)日：2011-04-19

申请号：US12816967

申请日：2010-06-16

Applicant: Zheng Gao ,  Brian W. Karr ,  Song Xue ,  Eric L. Granstrom ,  Khuong T. Tran ,  Yi X. Li

Inventor： Zheng Gao ,  Brian W. Karr ,  Song Xue ,  Eric L. Granstrom ,  Khuong T. Tran ,  Yi X. Li

IPC: G11B5/39

CPC classification number: G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1114 ,  Y10T428/1121

Abstract: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 Ω·μm2.

Abstract translation: 磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分，第二磁性部分和阻挡层的传感器堆叠。 第一磁性部分和第二磁性部分中的至少一个包括多层结构，其具有与阻挡层相邻的具有正的磁致伸缩的第一磁性层，第二磁性层以及第一磁性层和第二磁性层之间的中间层 层。 当磁传感器的电阻面积（RA）积为约1.0＆OHgr·μm2时，磁传感器具有至少约80％的MR比。