公开(公告)号：US07029771B2

公开(公告)日：2006-04-18

申请号：US10671970

申请日：2003-09-26

Applicant: Naoya Hasegawa ,  Eiji Umetsu ,  Masamichi Saito ,  Yosuke Ide

Inventor： Naoya Hasegawa ,  Eiji Umetsu ,  Masamichi Saito ,  Yosuke Ide

IPC: G11B5/127

CPC classification number: B82Y25/00 ,  B32B3/02 ,  B32B15/04 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/123 ,  H01F10/3268 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1157 ,  Y10T428/1193

Abstract: An intermediate region is formed at a central portion of an element in a track width direction, and an antiferromagnetic layer is not provided at the intermediate region. Accordingly, a sense current can be prevented from being shunted to the intermediate region, and as a result, improvement in reproduction output and strength against magnetic electrostatic damage can be realized. In addition, since the thickness of the central portion of the element is decreased, trend toward narrower gap can be realized. Furthermore, since the direction of magnetization of a free magnetic layer is oriented in the track width direction by shape anisotropy, means for orienting the magnetization is not necessary, and hence the structure and manufacturing method of the element can be simplified.

Abstract translation: 在轨道宽度方向上的元件的中央部形成中间区域，在中间区域不设置反铁磁层。 因此，可以防止感测电流被分流到中间区域，结果，可以实现再现输出的提高和抗静电损伤的强度。 此外，由于元件的中心部分的厚度减小，可以实现更窄的间隙的趋势。 此外，由于自由磁性层的磁化方向通过形状各向异性在磁道宽度方向上取向，因此不需要用于定向磁化的装置，因此可以简化元件的结构和制造方法。

公开(公告)号：US07005014B2

公开(公告)日：2006-02-28

申请号：US10271135

申请日：2002-10-15

Applicant: Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

Inventor： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

IPC: H01F1/00

CPC classification number: C23C14/5806 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/025 ,  C23C14/165 ,  C23C14/3492 ,  C23C28/021 ,  C23C28/023 ,  C23C28/028 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/302 ,  H01F41/304 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

公开(公告)号：US20050276997A1

公开(公告)日：2005-12-15

申请号：US10675435

申请日：2003-09-30

Applicant: Naoya Hasegawa ,  Eiji Umetsu ,  Masamichi Saito ,  Yosuke Ide

Inventor： Naoya Hasegawa ,  Eiji Umetsu ,  Masamichi Saito ,  Yosuke Ide

IPC: G11B5/39 ,  G01R33/09 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B32B9/00

CPC classification number: B82Y25/00 ,  G01R33/093 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/1193

Abstract: The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized. Furthermore, a magnetic detecting element with high resistance to electrostatic damage (ESD) can be manufactured. Thus, a magnetic detecting element adaptable for a future higher recording density can be provided.

Abstract translation: 本发明提供了一种磁检测元件，其包括钉扎磁性层和构成交换耦合膜的第一反铁磁层，其结构被优化以适当地钉扎钉扎磁性层的磁化，提高再生产量并适当地符合较窄的 间隙，以及制造磁检测元件的方法。 钉扎磁性层具有合成亚铁磁性结构，第一反铁磁性层具有形成在轨道宽度方向中心的预定空间C，仅在第一反铁磁性层与第一磁性层的两侧部之间产生交换耦合磁场 的固定磁性层。 因此，可以使被钉扎的磁性层的磁化被固定，并且可以实现再现输出和间隙变窄的改善。 此外，可以制造具有高抗静电损伤（ESD）的磁性检测元件。 因此，可以提供适用于将来更高记录密度的磁检测元件。

公开(公告)号：US06879472B2

公开(公告)日：2005-04-12

申请号：US10782654

申请日：2004-02-19

Applicant: Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

Inventor： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

IPC: G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/66 ,  H01F10/12 ,  H01F10/30 ,  H01F10/32 ,  H01L43/10

CPC classification number: H01F10/12 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/31 ,  G11B5/3903 ,  G11B5/66 ,  H01F10/123 ,  H01F10/30 ,  H01F10/3218 ,  H01F10/3268 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/1143

Abstract: An exchange coupling film has an antiferromagnetic layer made of an antiferromagnetic material containing an element X and Mn, where the element X is selected from the group of elements consisting of Pt, Pd, Ir, Rh, Ru, and Os, and combinations thereof. The antiferromagnetic layer has a region in which the ratio of the atomic percent of the element X to Mn increases in a direction towards said ferromagnetic layer. The crystalline structure of at least part of said antiferromagnetic layer has a CuAu0I type face-centered square ordered lattice.

Abstract translation: 交换耦合膜具有由含有元素X和Mn的反铁磁材料制成的反铁磁层，其中元素X选自由Pt，Pd，Ir，Rh，Ru和Os组成的元素组，及其组合。 反铁磁层具有其中元素X与Mn的原子百分比的比在朝向所述铁磁层的方向上增加的区域。 所述反铁磁层的至少一部分的晶体结构具有CuAu0I型面心正方形有序晶格。

公开(公告)号：US20050073778A1

公开(公告)日：2005-04-07

申请号：US10953930

申请日：2004-09-29

Applicant: Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide

Inventor： Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide

IPC: G01R33/09 ,  C22C19/07 ,  C22C38/00 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10

CPC classification number: B82Y25/00 ,  B32B15/01 ,  B82Y10/00 ,  C22C5/04 ,  C22C19/03 ,  C22C19/05 ,  C22C19/07 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic sensing element using a Heusler alloy is provided. In the magnetic sensing element, a free magnetic layer composed of a Heusler alloy layer is disposed on a nonmagnetic layer that corresponds to an fcc layer having the face-centered cubic (fcc) structure. Equivalent crystal planes represented as [111] planes in the fcc structure, which are the closest packed planes, are exposed on the surface of the nonmagnetic layer.

Abstract translation: 提供使用Heusler合金的磁传感元件。 在磁感应元件中，由与Heusler合金层组成的自由磁性层设置在对应于具有面心立方（fcc）结构的fcc层的非磁性层上。 在fcc结构中表示为[111]面的等效晶面是最接近的平面，在非磁性层的表面上露出。

公开(公告)号：US06790541B2

公开(公告)日：2004-09-14

申请号：US09834105

申请日：2001-04-11

Applicant: Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

Inventor： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

IPC: G11B533

CPC classification number: H01F10/12 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/31 ,  G11B5/3903 ,  G11B5/66 ,  H01F10/123 ,  H01F10/30 ,  H01F10/3218 ,  H01F10/3268 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/1143

Abstract: An exchange coupling film has an antiferromagnetic layer made of an antiferromagnetic material containing an element X and Mn, where the element X is selected from the group of elements consisting of Pt, Pd, Ir, Rh, Ru, and Os, and combinations thereof. The antiferromagnetic layer has a region in which the ratio of the atomic percent of the element X to Mn increases towards said ferromagnetic layer. The crystalline structure of at least part of said antiferromagnetic layer has a CuAu—I type face-centered square ordered lattice.

Abstract translation: 交换耦合膜具有由含有元素X和Mn的反铁磁材料制成的反铁磁层，其中元素X选自由Pt，Pd，Ir，Rh，Ru和Os组成的元素组，及其组合。 反铁磁层具有其中元素X与Mn的原子百分比之比朝向所述铁磁层增加的区域。 所述反铁磁层的至少一部分的晶体结构具有CuAu-I型面心正方形有序晶格。

公开(公告)号：US06757962B2

公开(公告)日：2004-07-06

申请号：US10013242

申请日：2001-12-10

Applicant: Naoya Hasegawa ,  Eiji Umetsu ,  Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide

Inventor： Naoya Hasegawa ,  Eiji Umetsu ,  Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide

IPC: H04R3100

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  H01F41/308 ,  H01F41/325 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048

Abstract: In a method for manufacturing a magnetic field sensing element including an electrode layer overlying a second antiferrogmagnetic layer and a first free magnetic layer where the electrode layer exposes a portion of the second magnetic layer, a portion of the second antiferromagnetic layer not covered with the electrode layer and a portion of the first free magnetic layer are removed using the electrode layer as a mask after laminating each layer to form a bottom type spin-valve thin film magnetic element, thereby enabling the first free magnetic layer to be endowed with a sufficient exchange coupling magnetic field by substantially eliminating the tapered portion of the remaining second antiferromagnetic layer thereby enabling the magnetization of the second free magnetic layer to be put into a single domain state.

Abstract translation: 在制造磁场感测元件的方法中，包括覆盖第二反铁磁层的电极层和第一自由磁性层，其中电极层暴露第二磁性层的一部分，第二反铁磁层的一部分未被电极覆盖 在层叠各层之后，使用电极层作为掩模去除第一自由磁性层的一部分和第一自由磁性层的一部分，从而形成底部型自旋阀薄膜磁性元件，从而能够赋予第一自由磁性层充分的交换 通过基本上消除剩余的第二反铁磁性层的锥形部分来耦合磁场，从而使得第二自由磁性层的磁化能够进入单一畴状态。

公开(公告)号：US06648985B2

公开(公告)日：2003-11-18

申请号：US09833306

申请日：2001-04-11

Applicant: Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

Inventor： Masamichi Saito ,  Naoya Hasegawa ,  Yosuke Ide ,  Kenichi Tanaka

IPC: H01F100

CPC classification number: C23C14/5806 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/025 ,  C23C14/165 ,  C23C14/3492 ,  C23C28/021 ,  C23C28/023 ,  C23C28/028 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/302 ,  H01F41/304 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

Abstract translation: 叠层结构包括反铁磁层，钉扎磁性层和与反铁磁性层在与固定磁性层相对的一侧上接触的种子层。 种子层主要由具有（111）面优先取向的面心立方晶体构成。 种子层优选是非磁性的。 包括反铁磁性层，自由磁性层和层之间的层具有（111）面优先取向。

公开(公告)号：US08952689B2

公开(公告)日：2015-02-10

申请号：US13607467

申请日：2012-09-07

Applicant: Yosuke Ide ,  Masamichi Saito

Inventor： Yosuke Ide ,  Masamichi Saito

IPC: G01R33/09 ,  B82Y25/00 ,  G01R15/20

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R15/205

Abstract: A magnetism sensor comprises a magnetoresistive element, the resistance of which changes due to the application of an induced magnetic field from the current being measured, and a fixed-resistance element. The fixed-resistance element has a self-pinned ferromagnetic fixed layer comprising a first ferromagnetic film and a second ferromagnetic film coupled antiferromagnetically with an antiparallel coupling film interposed therebetween. The antiparallel coupling film is a ruthenium film that exhibits an antiferromagnetic coupling effect with a first peak thickness. The difference between the degrees of magnetization of the first ferromagnetic film and the second ferromagnetic film is effectively zero.

Abstract translation: 磁传感器包括磁阻元件，其电阻由于施加来自被测量电流的感应磁场而变化，以及固定电阻元件。 固定电阻元件具有自固定的铁磁性固定层，其包括第一铁磁性膜和第二铁磁膜，其与反并联耦合并且其间插入反平行耦合膜。 反平行耦合膜是具有第一峰值厚度的反铁磁耦合效应的钌膜。 第一铁磁膜和第二铁磁膜的磁化强度之间的差异实质上为零。

公开(公告)号：US20130057273A1

公开(公告)日：2013-03-07

申请号：US13586757

申请日：2012-08-15

Applicant: Yosuke IDE

Inventor： Yosuke IDE

IPC: G01R33/09

CPC classification number: G01R33/093

Abstract: A current sensor includes a magnetoresistive element and magnetic shields arranged between a current line and the magnetoresistive element. The magnetic shields include a flat first magnetic shield placed so as to attenuate the strength of an induction magnetic field applied to the magnetoresistive element and a flat second magnetic shield placed apart from the first magnetic shield in a direction in-plane with the main surface of the first magnetic shield so as to attenuate the strength of the induction magnetic field applied to the magnetoresistive element and reduce the influence of residual magnetization in the first magnetic shield.

Abstract translation: 电流传感器包括磁阻元件和布置在电流线与磁阻元件之间的磁屏蔽。 磁屏蔽包括平坦的第一磁屏蔽，其被放置成衰减施加到磁阻元件的感应磁场的强度，以及与第一磁屏蔽分离的平面第二磁屏蔽在与主表面的主表面 第一磁屏蔽，以减弱施加到磁阻元件的感应磁场的强度，并减小第一磁屏蔽中剩余磁化的影响。