公开(公告)号：US08519704B2

公开(公告)日：2013-08-27

申请号：US13300076

申请日：2011-11-18

Applicant: Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Shigenobu Miyajima ,  Naoki Sakatsume ,  Kenji Ichinohe ,  Yoshihiro Nishiyama ,  Tatsuya Kogure ,  Hidekazu Kobayashi ,  Masahiro Iizuka

Inventor： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Shigenobu Miyajima ,  Naoki Sakatsume ,  Kenji Ichinohe ,  Yoshihiro Nishiyama ,  Tatsuya Kogure ,  Hidekazu Kobayashi ,  Masahiro Iizuka

IPC: G01R33/09

CPC classification number: G01R15/205 ,  B82Y25/00 ,  G01R33/093

Abstract: A magnetic-balance-system current sensor includes: a magnetoresistive element, a resistance value of the magnetoresistive element being changed by applying an induction magnetic field generated by a measurement target current; magnetic cores disposed near the magnetoresistive element; a feedback coil disposed near the magnetoresistive element and configured to generate a cancelling magnetic field that cancels out the induction magnetic field; and a magnetic-field detecting bridge circuit having two outputs. The measurement target current is measured on the basis of a current flowing through the feedback coil when the induction magnetic field and the induction magnetic field and the cancelling magnetic field cancel each other out. The feedback coil, the magnetic cores, and the magnetic-field detecting bridge circuit are formed on a same substrate. The feedback coil is of a spiral type, and the magnetic cores are provided above and below the feedback coil.

Abstract translation: 磁平衡系统电流传感器包括：磁阻元件，通过施加由测量目标电流产生的感应磁场来改变磁阻元件的电阻值; 设置在磁阻元件附近的磁芯; 设置在磁阻元件附近并被配置为产生抵消感应磁场的消除磁场的反馈线圈; 以及具有两个输出的磁场检测桥接电路。 当感应磁场和感应磁场和消除磁场相互抵消时，基于流过反馈线圈的电流来测量测量目标电流。 反馈线圈，磁芯和磁场检测桥式电路形成在同一基板上。 反馈线圈是螺旋型的，并且磁芯设置在反馈线圈的上方和下方。

公开(公告)号：US08437107B2

公开(公告)日：2013-05-07

申请号：US12754509

申请日：2010-04-05

Applicant: Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Kenji Ichinohe ,  Naoki Sakatsume

Inventor： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Kenji Ichinohe ,  Naoki Sakatsume

IPC: G11B5/39

CPC classification number: G01R33/098

Abstract: A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; and first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view, wherein a distance between the magnetoresistive element and the second shield film is set to 8 to 100 μm.

Abstract translation: 磁耦合型隔离器包括：用于通过输入信号产生外部磁场的磁场发生器; 磁阻元件，用于检测外部磁场并将检测到的磁场转换成电信号，磁阻元件与磁场发生器电绝缘并且位于能够被磁耦合的位置以与磁场重叠 发电机，如俯视图; 以及第一和第二屏蔽膜，如俯视图所示，与磁场发生器和磁阻元件重叠，其中磁阻元件和第二屏蔽膜之间的距离设定为8至100μm。

公开(公告)号：US08410893B2

公开(公告)日：2013-04-02

申请号：US13439782

申请日：2012-04-04

Applicant: Hideaki Kawasaki ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Kenji Ichinohe ,  Yosuke Ide

Inventor： Hideaki Kawasaki ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Kenji Ichinohe ,  Yosuke Ide

IPC: H01L43/00

CPC classification number: H01L43/02 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  Y10T29/4902

Abstract: A first short-circuit layer and a second short-circuit layer are electrically connected to and integrally stacked onto only a first magnetoresistance effect element layer and a first resistance element layer, respectively, so as to achieve short-circuiting, and thereby adjusting electrical resistances of the first magnetoresistance effect element layer and the first resistance element layer.

Abstract translation: 第一短路层和第二短路层分别与第一磁阻效应元件层和第一电阻元件层电连接并整体堆叠，以实现短路，从而调整电阻 的第一磁阻效应元件层和第一电阻元件层。

公开(公告)号：US08222769B2

公开(公告)日：2012-07-17

申请号：US12754529

申请日：2010-04-05

Applicant: Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Kenji Ichinohe ,  Naoki Sakatsume

Inventor： Yosuke Ide ,  Masamichi Saito ,  Akira Takahashi ,  Tsuyoshi Nojima ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Kenji Ichinohe ,  Naoki Sakatsume

IPC: H04B3/00 ,  H01F27/30 ,  H01L29/82

CPC classification number: G01R33/098

Abstract: A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view; and a third shield film disposed to surround the magnetoresistive element.

Abstract translation: 磁耦合型隔离器包括：用于通过输入信号产生外部磁场的磁场发生器; 磁阻元件，用于检测外部磁场并将检测到的磁场转换成电信号，磁阻元件与磁场发生器电绝缘并且位于能够被磁耦合的位置以与磁场重叠 发电机，如俯视图; 第一和第二屏蔽膜与磁场发生器和磁阻元件重叠，如俯视图所示; 以及设置成围绕所述磁阻元件的第三屏蔽膜。

公开(公告)号：US07961442B2

公开(公告)日：2011-06-14

申请号：US11947315

申请日：2007-11-29

Applicant: Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

Inventor： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC: G11B5/39

CPC classification number: H01F10/3254 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/31678

Abstract: A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.

Abstract translation: 隧道磁检测元件包括具有包括Ti-O子层和Ta-O子层的层状结构的绝缘阻挡层。 绝缘阻挡层中的Ta浓度相对于构成绝缘阻挡层的Ti和Ta的总和为100at％，设定为大于0at％但不大于约7at％。

公开(公告)号：US07916436B2

公开(公告)日：2011-03-29

申请号：US11890086

申请日：2007-08-03

Applicant: Masahiko Ishizone ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Kazumasa Nishimura

Inventor： Masahiko Ishizone ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Kazumasa Nishimura

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08

Abstract: A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (ΔR/R) at low RA than known tunneling magnetic sensors.

Abstract translation: 隧道磁传感器包括在钉扎磁性层和绝缘阻挡层之间的铂层。 铂层可能改变绝缘阻挡层的势垒高度（势高）和势垒宽度（电位宽度），以降低VCR的绝对值，从而提供比已知的隧道磁传感器更高的操作稳定性。 此外，绝缘阻挡层可以在其底部界面（其中开始形成绝缘阻挡层）时实现增加的平坦度。 因此，隧道磁传感器可以在低RA处提供比已知的隧道磁传感器更高的电阻变化率（＆Dgr; R / R）。

公开(公告)号：US07898776B2

公开(公告)日：2011-03-01

申请号：US11880730

申请日：2007-07-24

Applicant: Ryo Nakabayashi ,  Naoya Hasegawn ,  Masamichi Saito ,  Masahiko Ishizone ,  Yosuke Ide ,  Takuya Seino ,  Kazumasa Nishimura

Inventor： Ryo Nakabayashi ,  Naoya Hasegawn ,  Masamichi Saito ,  Masahiko Ishizone ,  Yosuke Ide ,  Takuya Seino ,  Kazumasa Nishimura

IPC: G11B5/33 ,  G11B5/127

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12

Abstract: A tunneling magnetic sensing element is provided, in which an increase in the magnetostriction of a free magnetic layer is reduced and the rate of change in resistance is high. A laminate T1 constituting the tunneling magnetic sensing element includes a portion in which a pinned magnetic layer, a barrier layer, and a free magnetic layer are disposed in that order from the bottom. An enhancing layer disposed on the barrier layer side of the free magnetic layer includes a first enhancing layer on the barrier layer side and a second enhancing layer on the soft magnetic layer side, and the Fe content of a CoFe alloy constituting the first enhancing layer is specified to be larger than the Fe content of the CoFe alloy of the second enhancing layer.

Abstract translation: 提供了一种隧道磁传感元件，其中自由磁层的磁致伸缩的增加减小，并且电阻变化率高。 构成隧道磁感应元件的层叠体T1包括从底部依次配置有钉扎磁性层，阻挡层和自由磁性层的部分。 设置在自由磁性层的阻挡层侧的增强层包括阻挡层侧的第一增强层和软磁性层一侧的第二增强层，构成第一增强层的CoFe合金的Fe含量为 规定为大于第二增强层的CoFe合金的Fe含量。

公开(公告)号：US20100270865A1

公开(公告)日：2010-10-28

申请号：US12754509

申请日：2010-04-05

Applicant: Yosuke IDE ,  Masamichi SAITO ,  Akira TAKAHASHI ,  Tsuyoshi NOJIMA ,  Yoshihiro NISHIYAMA ,  Hidekazu KOBAYASHI ,  Kenji ICHINOHE ,  Naoki SAKATSUME

Inventor： Yosuke IDE ,  Masamichi SAITO ,  Akira TAKAHASHI ,  Tsuyoshi NOJIMA ,  Yoshihiro NISHIYAMA ,  Hidekazu KOBAYASHI ,  Kenji ICHINOHE ,  Naoki SAKATSUME

IPC: H01L23/52

CPC classification number: G01R33/098

Abstract: A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; and first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view, wherein a distance between the magnetoresistive element and the second shield film is set to 8 to 100 μm.

Abstract translation: 磁耦合型隔离器包括：用于通过输入信号产生外部磁场的磁场发生器; 磁阻元件，用于检测外部磁场并将检测到的磁场转换成电信号，磁阻元件与磁场发生器电绝缘并且位于能够被磁耦合的位置上以与磁场重叠 发电机，如俯视图; 以及第一和第二屏蔽膜，与顶视平面图中的磁场发生器和磁阻元件重叠，其中磁阻元件和第二屏蔽膜之间的距离设定为8至100μm。

公开(公告)号：US07738218B2

公开(公告)日：2010-06-15

申请号：US11436270

申请日：2006-05-17

Applicant: Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

Inventor： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

IPC: G11B5/127

CPC classification number: G11B5/3906 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3263 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/10

Abstract: A magnetic detection element capable of maintaining the ΔRA at a high level and reducing the magnetostriction by improving a material for a free magnetic layer, as well as a method for manufacturing the same, is provided. The free magnetic layer includes a laminate composed of a CoMnX alloy layer formed from a metal compound represented by a compositional formula CoaMnbXc (where X represents at least one of Ge, Ga, In, Si, Pb, Zn, and Sb and a+b+c=100 atomic percent) and a CoMnZ alloy layer formed from a metal compound represented by a compositional formula CodMneZf (where Z represents at least one of Sn and Al and d+e+f=100 atomic percent). In this manner, the magnetostriction of the free magnetic layer can be reduced.

Abstract translation: 提供了能够通过改善自由磁性层的材料而将高分辨率RA维持并减小磁致伸缩的磁性检测元件及其制造方法。 自由磁性层包括由由组成式CoaMnbXc表示的金属化合物形成的CoMnX合金层（其中X表示Ge，Ga，In，Si，Pb，Zn和Sb中至少一种）和a + b + c = 100原子％）和由组成式CodMneZf（Z表示Sn和Al中的至少一种，d + e + f = 100原子％）表示的金属化合物形成的CoMnZ合金层。 以这种方式，可以减小自由磁性层的磁致伸缩。

公开(公告)号：US20090316308A1

公开(公告)日：2009-12-24

申请号：US12548982

申请日：2009-08-27

Applicant: Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

Inventor： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC: G11B5/127

CPC classification number: G11B5/3903 ,  G11B5/3163 ,  G11B5/398

Abstract: A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

Abstract translation: CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括固定磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层 层。 在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸 。 此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。