公开(公告)号：US20120276483A1

公开(公告)日：2012-11-01

申请号：US13430319

申请日：2012-03-26

申请人： Tsutomu OGIHARA ,  Takafumi UEDA ,  Toshiharu YANO

发明人： Tsutomu OGIHARA ,  Takafumi UEDA ,  Toshiharu YANO

IPC分类号： G03F7/20 ,  C03C25/68

CPC分类号： G03F7/0752 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

摘要： The invention provides a patterning process, comprising at least a step of forming a silicon-containing film on a body to be processed by using a composition for the silicon-containing film, a step of forming, on the silicon-containing film, a photoresist film by using a resist composition, a step of exposing to the photoresist film after heat treatment thereof, and a step of forming a negative pattern by dissolving an unexposed area of the photoresist film by using a developer of an organic solvent; wherein a composition giving the silicon-containing film whose pure-water contact angle in the part corresponding to the exposed area of the photoresist film becomes in the range of 35° or more to lower than 70° after exposure is used as the composition. There can be optimum patterning process as a patterning process of a negative resist pattern to be formed by adopting organic solvent-based development.

摘要翻译： 本发明提供一种图案化工艺，其至少包括通过使用含硅膜组合物在待加工物体上形成含硅膜的步骤，在含硅膜上形成光致抗蚀剂的步骤 通过使用抗蚀剂组合物的膜，通过热处理后暴露于光致抗蚀剂膜的步骤，以及通过使用有机溶剂的显影剂溶解光致抗蚀剂膜的未曝光区域而形成负图案的步骤; 其中使用赋予与光致抗蚀剂膜的曝光区域相对应的部分中的纯水接触角在曝光后变为35°以上且低于70°的范围内的含硅膜的组合物作为组合物。 作为通过采用有机溶剂型显影形成的负型抗蚀剂图案的图案化工艺，可以进行最佳的图案化处理。

公开(公告)号：US20120238095A1

公开(公告)日：2012-09-20

申请号：US13416842

申请日：2012-03-09

申请人： Tsutomu OGIHARA ,  Takafumi UEDA ,  Toshiharu YANO

发明人： Tsutomu OGIHARA ,  Takafumi UEDA ,  Toshiharu YANO

IPC分类号： H01L21/312 ,  G03F7/00 ,  B29C59/02 ,  G03F7/20

CPC分类号： G03F7/0757 ,  C08L83/04 ,  C08L83/14 ,  C09D183/04 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/325 ,  C08G77/04

摘要： The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.

摘要翻译： 本发明提供一种用于通过光刻形成负型图案的图案化工艺，其至少包括以下步骤：使用含有特定含硅化合物（A）和有机溶剂（B）的含硅膜形成用组合物以形成 含硅膜; 使用无硅抗蚀剂组合物在含硅膜上形成光致抗蚀剂膜; 热处理光致抗蚀剂膜，然后将光致抗蚀剂膜暴露于高能量束; 并使用包含有机溶剂的显影剂来溶解光致抗蚀剂膜的未曝光区域，由此获得负图案。 可以存在作为通过采用有机溶剂型显影形成的负型抗蚀剂的图案化工艺的最佳方案，以及用于形成所述工艺中使用的含硅膜的组合物。

公开(公告)号：US08029974B2

公开(公告)日：2011-10-04

申请号：US12461726

申请日：2009-08-21

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/26 ,  G03F7/075 ,  G03F7/40

CPC分类号： G03F7/11 ,  C08G77/58 ,  C09D183/04 ,  G03F7/0752

摘要： There is disclosed a thermosetting metal oxide-containing film-forming composition for forming a metal oxide-containing film to be formed in a multilayer resist process used in lithography, the thermosetting metal oxide-containing film-forming composition comprising, at least: (A) a metal oxide-containing compound obtained by hydrolytic condensation of a hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a thermal crosslinking accelerator; (C) a monovalent, divalent, or higher organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher alcohol; and (E) an organic solvent. There can be provided a metal oxide-containing film-forming composition in a multi-layer resist process, in a manner that a film made of the composition allows for formation of an excellent pattern of a photoresist film, the composition is capable of forming a metal oxide-containing film as an etching mask having an excellent dry etching resistance, the composition is excellent in storage stability, and the film made of the composition is removable by a solution used in a removal process; a metal oxide-containing film-formed substrate; and a pattern forming process.

摘要翻译： 公开了一种用于形成在用于光刻的多层抗蚀剂工艺中形成的含金属氧化物的膜的含热固性金属氧化物的成膜组合物，所述含热固性金属氧化物的成膜组合物至少包含：（A ）通过水解性硅化合物和可水解金属化合物的水解缩合获得的含金属氧化物的化合物; （B）热交联促进剂; （C）具有1至30个碳原子的一价，二价或更高级的有机酸; （D）三价或更高级醇; 和（E）有机溶剂。 可以在多层抗蚀剂工艺中提供含金属氧化物的成膜组合物，使得由该组合物制成的膜能够形成光致抗蚀剂膜的优异图案，该组合物能够形成 含有金属氧化物的膜作为具有优异的耐干蚀刻性的蚀刻掩模，该组合物具有优异的储存稳定性，并且由组合物制成的膜可通过在去除过程中使用的溶液除去; 含金属氧化物的膜形成基板; 和图案形成处理。

公开(公告)号：US20100147334A1

公开(公告)日：2010-06-17

申请号：US12591115

申请日：2009-11-09

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Shozo Shirai

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Shozo Shirai

IPC分类号： B08B3/00

CPC分类号： G03F7/423 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/425

摘要： There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).

摘要翻译： 公开了一种涂覆型含硅膜剥离工艺，用于剥离以除去通过在基板上涂布用于光刻的含硅膜组合物而获得的涂覆型含硅膜，该涂层型含硅膜至少包括：第一 用含有硫酸根离子和/或氟离子的酸性汽提溶液处理含硅膜的步骤; 以及用含有氮化合物的碱性汽提溶液处理含硅膜的第二步骤。 可以提供一种方法，用于允许除去干法汽提之前没有常规去除的含硅膜通过基于剥离溶液（湿剥离）的汽提方法除去。

公开(公告)号：US07585613B2

公开(公告)日：2009-09-08

申请号：US11653839

申请日：2007-01-17

申请人： Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

发明人： Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： G03F7/11

CPC分类号： G03F7/091 ,  G03F7/0752 ,  G03F7/0757

摘要： There is disclosed an antireflection film composition used for lithography comprising: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin; a first acid generator that is decomposed at a temperature of 200 degrees C. or less; and an organic solvent. There can be provided an antireflection film composition that prevents intermixing in the vicinity of the antireflection film/photoresist film interface, that provides a resist pattern over the antireflection film with almost vertical wall profile, and that provides less damage to an underlying layer of the antireflection film.

摘要翻译： 公开了用于光刻的抗反射膜组合物，其至少包含质均分子量为30,000以下的光吸收性有机硅树脂，其中分子量小于600的组分占全部树脂的5％以下; 在200℃以下的温度下分解的第一酸产生剂; 和有机溶剂。 可以提供防反射膜组合物，其防止在抗反射膜/光致抗蚀剂膜界面附近的混合，其在具有几乎垂直的壁轮廓的抗反射膜上提供抗蚀剂图案，并且对抗反射的下层提供较小的损伤 电影。

公开(公告)号：US07541134B2

公开(公告)日：2009-06-02

申请号：US11150565

申请日：2005-06-10

申请人： Motoaki Iwabuchi ,  Yoshitaka Hamada ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda ,  Dirk Pfeiffer

发明人： Motoaki Iwabuchi ,  Yoshitaka Hamada ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda ,  Dirk Pfeiffer

IPC分类号： G03F7/11 ,  G03F7/039 ,  G03F7/095

CPC分类号： G03F7/091 ,  Y10S438/952

摘要： The present invention provides a material for an antireflective film characterized by high etching selectivity with respect to a resist, that is, which has a fast etching speed when compared to the resist, and in addition, can be removed without damage to a film which is to be processed. The present invention also provides a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film-forming composition, and a pattern formation method that uses this antireflective film as a hard mask, and a pattern formation method that uses this antireflective film as a hard mask for processing the substrate. The present invention also provides an antireflective film-forming composition comprising an organic solvent, a cross linking agent, and a polymer comprising a light absorbing group obtained by hydrolyzing and condensing more than one type of silicon compound, a crosslinking group and a non-crosslinking group.

摘要翻译： 本发明提供了一种抗反射膜的材料，其特征在于相对于抗蚀剂具有高蚀刻选择性，即与抗蚀剂相比具有快的蚀刻速度，并且还可以除去不损坏膜的膜 待处理。 本发明还提供了使用该防反射膜形成组合物在基板上形成抗反射膜层的图案形成方法，以及使用该抗反射膜作为硬掩模的图案形成方法以及使用该抗反射膜的图案形成方法 膜作为加工基材的硬掩模。 本发明还提供一种抗反射膜形成组合物，其包含有机溶剂，交联剂和包含通过水解和缩合多于一种硅化合物，交联基团和非交联的光吸收基团的聚合物 组。

公开(公告)号：US07385021B2

公开(公告)日：2008-06-10

申请号：US11148161

申请日：2005-06-09

申请人： Yoshitaka Hamada ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

发明人： Yoshitaka Hamada ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： C08G77/08

CPC分类号： G03F7/0752 ,  C08K5/0025 ,  C08L83/06 ,  G03F7/091 ,  G03F7/11 ,  C08L2666/28

摘要： A sacrificial film-forming composition is provided comprising (A) an organofunctional silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formula (1) and formula (2) and/or (3): X—Y—SiZ3   (1) RnSiZ4-n   (2) P—SiZ3   (3) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, n is an integer of 0-3, and P is a substituent group which readily decomposes and volatilizes upon thermal decomposition, (B) a crosslinking agent, (C) an acid generator, (D) an extender or porogen, and (E) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.

摘要翻译： 提供了牺牲成膜组合物，其包含（A）有机官能有机硅树脂，其为具有式（1）和式（2）和/或（3）的可水解硅烷的共水解缩合物：<β直列式 描述=“在线公式”end =“lead”？> XY-SiZ 3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？ > <？in-line-formula description =“In-line Formulas”end =“lead”？> R SiZ 4-n（2） line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> P-SiZ <3 >（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，Y是单键或二价烃基 ，R为氢或一价烃基，n为0-3的整数，P为在热分解时容易分解挥发的取代基，（B）交联剂，（C）aci （D）增量剂或致孔剂，和（E）有机溶剂。 该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。

公开(公告)号：US20080026322A1

公开(公告)日：2008-01-31

申请号：US11808100

申请日：2007-06-06

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Takeshi Asano ,  Motoaki Iwabuchi

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Takeshi Asano ,  Motoaki Iwabuchi

IPC分类号： G03C1/00

CPC分类号： C08G77/08 ,  C08L83/04 ,  C09D183/04 ,  G03F7/094 ,  G03F7/11 ,  C08L83/00

摘要： A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.

摘要翻译： 由含有（A-1）在酸催化剂存在下进行可水解硅化合物的水解缩合得到的含硅化合物和除去酸催化剂（A-2）的热固性组合物形成含硅膜 ）通过在碱性催化剂的存在下进行可水解硅化合物的水解缩合而除去碱性催化剂得到的含硅化合物，（B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或 锍，碘或铵化合物，（C）有机酸和（D）有机溶剂。 含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。

公开(公告)号：US20070134916A1

公开(公告)日：2007-06-14

申请号：US11636647

申请日：2006-12-11

申请人： Motoaki Iwabuchi ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda

发明人： Motoaki Iwabuchi ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/302

CPC分类号： G03F7/0752 ,  C08K3/22 ,  C09D183/14 ,  G03F7/091 ,  C08L83/04

摘要： There is disclosed an antireflection film composition for forming an intermediate resist film of a multilayer resist film used in lithography comprising: at least a polymer obtained by reacting a chelating agent with a polymer having a repeating unit represented by the following general formula (1); an organic solvent; and an acid generator. There can be provided a novel antireflection film composition that exhibits high etch selection ratio to a photoresist film, that forms a dense inorganic film, whereby an excellent pattern can be formed on the overlying photoresist film, that can be removed with wet stripping, that exhibits high preservation stability and high dry etching resistance when an underlying layer is etched, and that is suitable for forming an intermediate resist film of a multilayer resist film; a patterning process in which an antireflection film is formed over a substrate by using the antireflection film composition; and a substrate having the antireflection film as an intermediate resist film.

摘要翻译： 公开了一种用于形成用于光刻的多层抗蚀剂膜的中间抗蚀剂膜的抗反射膜组合物，其包含：至少一种通过使螯合剂与具有由以下通式（1）表示的重复单元的聚合物反应获得的聚合物; 有机溶剂; 和酸发生剂。 可以提供一种新颖的抗反射膜组合物，其对光致抗蚀剂膜显示出高的蚀刻选择比，形成致密的无机膜，由此可以在可以用湿剥离除去的上覆的光致抗蚀剂膜上形成优异的图案， 当蚀刻下面的层时，具有高的保存稳定性和高的耐干蚀刻性，并且适用于形成多层抗蚀剂膜的中间抗蚀剂膜; 通过使用防反射膜组合物在基板上形成抗反射膜的图案化工艺; 以及具有抗反射膜作为中间抗蚀剂膜的基板。

公开(公告)号：US20070117252A1

公开(公告)日：2007-05-24

申请号：US11595941

申请日：2006-11-13

申请人： Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

发明人： Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： H01L21/00 ,  H01L21/31

CPC分类号： C08G77/48 ,  C09D183/14 ,  G03F7/091

摘要： A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.

摘要翻译： 用于形成使用高达200nm的曝光光的光刻工艺中的抗反射涂层的组合物包括通过具有下式的含硅 - 硅键的硅烷化合物的水解缩合获得的含硅聚合物：R（6 -m）其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组成 允许上覆的光致抗蚀剂膜被图案化以令人满意的轮廓，并且相对于有机材料具有高的蚀刻选择性，使得可以高精度地加工基底。