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公开(公告)号：US20130108957A1
公开(公告)日：2013-05-02
申请号：US13604270
申请日：2012-09-05
申请人： Motoaki Iwabuchi , Tsutomu Ogihara
发明人： Motoaki Iwabuchi , Tsutomu Ogihara
CPC分类号： G03F7/004 , B01D37/025 , G03F7/075 , G03F7/16
摘要： The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
摘要翻译： 本发明提供了一种用于光刻的抗蚀剂组合物的制备方法，至少包括：通过过滤器过滤用于光刻的抗蚀剂组合物的过滤步骤，其中在过滤步骤中，将胶态溶胶从 上游，将胶体粒子吸附到过滤器上，然后将光刻用抗蚀剂组合物通过过滤器，从而除去抗蚀剂组合物中的微细颗粒，以进行光刻。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。
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2.发明授权公开(公告)号：US07910283B2
公开(公告)日：2011-03-22
申请号：US11595941
申请日：2006-11-13
CPC分类号： C08G77/48 , C09D183/14 , G03F7/091
摘要： A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.
摘要翻译： 用于形成抗光反射涂层的组合物，其用于使用高达200nm的曝光的光刻工艺，包括通过具有下式的含硅 - 硅键的硅烷化合物水解缩合获得的含硅聚合物：R（6-m） Si2Xm，其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高的蚀刻选择性，使得 可以高精度地处理基板。
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3.发明授权公开(公告)号：US07678529B2
公开(公告)日：2010-03-16
申请号：US11594176
申请日：2006-11-08
CPC分类号： G03F7/0752 , G03F7/0757 , G03F7/094 , G03F7/11 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/12 , Y10S430/122
摘要： A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si—Si bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.
摘要翻译： 多层抗蚀剂工艺包括在可图案化衬底上依次形成底涂层，中间膜和光致抗蚀剂膜，并且在多个阶段中进行蚀刻。 含硅的成膜组合物可用于形成用作蚀刻掩模的中间膜，其包含通过至少一种含Si-Si键的硅烷化合物的水解缩合而得到的含硅聚合物，其具有下式：R（6-m ）Si 2 X m其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高蚀刻选择性。
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4.发明授权Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device 有权多孔膜形成组合物，组合物的制备方法，多孔膜和半导体器件公开(公告)号：US07402621B2
公开(公告)日：2008-07-22
申请号：US11041780
申请日：2005-01-24
申请人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
发明人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
IPC分类号： C08G77/06
CPC分类号： H01L21/02126 , C08G77/06 , C08G77/08 , C09D183/02 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.
摘要翻译： 本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液，并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。 更具体地说，提供了制备多孔膜形成组合物的方法，其包括制备聚硅氧烷，二氧化硅或沸石颗粒（组分A）的步骤，赋予组分A交联性，并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。 此外，提供了形成多孔膜的方法，其包括通过制备组分A制备多孔膜形成组合物，赋予组分A交联性并加入交联性抑制剂以暂时终止交联性; 将多孔膜形成组合物施加到基材上以形成膜，干燥膜，使颗粒交联，同时通过加热干燥膜除去交联性抑制剂。
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公开(公告)号：US20070172759A1
公开(公告)日：2007-07-26
申请号：US11653839
申请日：2007-01-17
IPC分类号： G03F7/26
CPC分类号： G03F7/091 , G03F7/0752 , G03F7/0757
摘要： There is disclosed an antireflection film composition used for lithography comprising: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin; a first acid generator that is decomposed at a temperature of 200 degrees C. or less; and an organic solvent. There can be provided an antireflection film composition that prevents intermixing in the vicinity of the antireflection film/photoresist film interface, that provides a resist pattern over the antireflection film with almost vertical wall profile, and that provides less damage to an underlying layer of the antireflection film.
摘要翻译： 公开了用于光刻的抗反射膜组合物，其至少包含质均分子量为30,000以下的光吸收性有机硅树脂，其中分子量小于600的组分占全部树脂的5％以下; 在200℃以下的温度下分解的第一酸产生剂; 和有机溶剂。 可以提供防反射膜组合物，其防止在抗反射膜/光致抗蚀剂膜界面附近的混合，其在具有几乎垂直的壁轮廓的抗反射膜上提供抗蚀剂图案，并且对抗反射的下层提供较小的损伤 电影。
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公开(公告)号：US06680107B2
公开(公告)日：2004-01-20
申请号：US10045160
申请日：2002-01-15
IPC分类号： B32B326
CPC分类号： C08J5/18 , C08J2383/04 , C08L43/04 , C08L83/04 , C09D183/04 , Y10T428/249953 , Y10T428/31663 , C08L2666/14 , C08L2666/04
摘要： A composition comprising (A) a silanol group-bearing silicone resin comprising 30-100 mol % of T units: R1—SiZ3 and among the entire T units, 30-80 mol % of T-2 units containing only one silanol group: R1—Si(OH)Z′2 wherein R1 is a monovalent hydrocarbon group, Z is OH, hydrolyzable group or siloxane residue, at least one Z being a siloxane residue, and Z′ is a siloxane residue, and having a number average molecular weight of at least 100, and (B) a polymer resulting from an acrylate and/or methacrylate monomer is applied to a substrate and heated above the decomposition temperature of polymer (B) to form a porous film. The porous film is flat and uniform despite porosity, and has a low permittivity and high mechanical strength. It is best suited as an interlayer insulating layer when used in semiconductor device fabrication.
摘要翻译： 一种组合物，其包含（A）含有硅烷醇基的硅氧烷树脂，其包含30-100摩尔％的T单元：R 1 -SiZ 3，在整个T单元中，30-80摩尔％的仅含有一个硅烷醇的T-2单元 基团：R 1 -Si（OH）Z'2其中R 1是一价烃基，Z是OH，可水解基团或硅氧烷残基，至少一个Z是硅氧烷残基，Z'是硅氧烷 残基，数均分子量为100以上，（B）将由丙烯酸酯和/或甲基丙烯酸酯单体得到的聚合物加到基材上并加热到高于聚合物（B）的分解温度以形成多孔膜 。 多孔膜尽管孔隙度是平坦的和均匀的，并且具有低介电常数和高机械强度。 当用于半导体器件制造时，它最适合作为层间绝缘层。
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公开(公告)号：US5136072A
公开(公告)日：1992-08-04
申请号：US798515
申请日：1991-11-26
申请人： Toshio Shinohara , Motoaki Iwabuchi
发明人： Toshio Shinohara , Motoaki Iwabuchi
CPC分类号： C07F7/184
摘要： Thexyl (C.sub.1 -C.sub.4) alkyl dialkoxy silanes are proposed as a class of novel organosilicon compounds such as thexyl methyl dimethoxy silane and thexyl n-butyl dimethoxy silane. These silane compounds can be synthesized by several different routes. For example, thexyl methyl dimethoxy silane is prepared starting from methyl phenyl chlorosilane which is subjected to the hydrosilation reaction with 2,3-dimethyl-2-butene to introduce a thexyl group and the compound is converted by the reaction with hydrogen chloride into thexyl methyl dichlorosilane which is methoxylated by the reaction with methyl alcohol.
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公开(公告)号：US08822128B2
公开(公告)日：2014-09-02
申请号：US13604270
申请日：2012-09-05
申请人： Motoaki Iwabuchi , Tsutomu Ogihara
发明人： Motoaki Iwabuchi , Tsutomu Ogihara
CPC分类号： G03F7/004 , B01D37/025 , G03F7/075 , G03F7/16
摘要： The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
摘要翻译： 本发明提供了一种用于光刻的抗蚀剂组合物的制备方法，至少包括：通过过滤器过滤用于光刻的抗蚀剂组合物的过滤步骤，其中在过滤步骤中，使胶态溶胶通过过滤器 上游，将胶体粒子吸附到过滤器上，然后将光刻用抗蚀剂组合物通过过滤器，从而除去抗蚀剂组合物中的微细颗粒，以进行光刻。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。
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9.发明授权Sacrificial film-forming composition, patterning process, sacrificial film and removal method 有权牺牲成膜组合物，图案化工艺，牺牲膜和去除方法公开(公告)号：US07485690B2
公开(公告)日：2009-02-03
申请号：US11148380
申请日：2005-06-09
申请人： Yoshitaka Hamada , Tsutomu Ogihara , Motoaki Iwabuchi , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
发明人： Yoshitaka Hamada , Tsutomu Ogihara , Motoaki Iwabuchi , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
IPC分类号： C08G77/08
CPC分类号： G03F7/094 , G03F7/0752 , H01L21/31116 , H01L21/31144 , H01L21/76808
摘要： A sacrificial film-forming composition is provided comprising (A) a silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formulae (1) and (2): X—Y—SiZ3 (1) RnSiZ4-n (2) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group such as an unsubstituted hydroxyl group or a substituted or unsubstituted epoxy, acyloxy or acryloxy group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, and n is an integer of 0 to 3, the silicone resin being capable of crosslinking reaction by the crosslinkable organofunctional group in formula (1), (B) a crosslinking agent, (C) an acid generator, and (D) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.
摘要翻译： 提供牺牲性成膜组合物，其包含（A）作为具有式（1）和（2）的可水解硅烷的共水解缩合物的硅氧烷树脂：<？在线配方说明=“在线配方” end =“lead”？> XY-SiZ3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula end =“lead”？> RnSiZ4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，例如 未取代的羟基或取代或未取代的环氧基，酰氧基或丙烯酰氧基，Y为单键或二价烃基，R为氢或一价烃基，n为0〜3的整数，有机硅树脂为 能够通过式（1）中的交联性有机官能团交联反应，（B）交联剂，（C）酸产生剂和（D）有机溶剂进行交联反应。 该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。
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10.发明授权Porous film-forming composition, patterning process, and porous sacrificial film 有权多孔成膜组合物，图案化工艺和多孔牺牲膜公开(公告)号：US07417104B2
公开(公告)日：2008-08-26
申请号：US11148371
申请日：2005-06-09
CPC分类号： C08G77/04 , C08G77/08 , C08G77/14 , C09D183/04 , C09D183/06 , G03F7/0757 , H01L21/02123 , H01L21/02211 , H01L21/02282 , H01L21/0276 , H01L21/31144 , H01L21/3121 , H01L21/76808
摘要： A porous film-forming composition is provided comprising (A) a polymer obtained by hydrolytic condensation of a hydrolyzable silane having formula (1): R1n—Si—R24-n (1) wherein R1 is a monovalent organic group or hydrogen, R2 is a hydrolyzable group or a hydroxyl group and n is an integer of 0 to 3, a hydrolyzate thereof or a partial condensate thereof, with the proviso that at least one silicon compound having an organic crosslinkable group as R1 is included, the polymer being capable of crosslinking reaction by the organic crosslinkable group, and (B) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is dissolvable in a stripping solution.
摘要翻译： 提供了一种多孔成膜组合物，其包含（A）通过具有式（1）的可水解硅烷的水解缩合得到的聚合物：<？in-line-formula description =“In-line Formulas”end =“lead” （1）<β在线公式描述中的一个或多个（1） 其中R 1是一价有机基团或氢，R 2是可水解基团或羟基，并且其中R 1是一价有机基团或氢原子， n为0〜3的整数，其水解物或其部分缩合物，条件是含有至少一种具有有机交联基团的硅化合物为R 1，所述聚合物能够 通过有机交联基团进行交联反应，和（B）有机溶剂。 该组合物具有提高的储存稳定性，填充性能，粘合性和涂层均匀性，足以形成可溶于剥离溶液中的牺牲膜。
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