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    Coated-type silicon-containing film stripping process
    4.
    发明申请
    Coated-type silicon-containing film stripping process 有权
    涂层式含硅膜剥离工艺

    公开(公告)号：US20100147334A1

    公开(公告)日：2010-06-17

    申请号：US12591115

    申请日：2009-11-09

    申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Shozo Shirai

    发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Shozo Shirai

    IPC分类号： B08B3/00

    CPC分类号： G03F7/423 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/425

    摘要： There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).

    摘要翻译： 公开了一种涂覆型含硅膜剥离工艺，用于剥离以除去通过在基板上涂布用于光刻的含硅膜组合物而获得的涂覆型含硅膜，该涂层型含硅膜至少包括：第一 用含有硫酸根离子和/或氟离子的酸性汽提溶液处理含硅膜的步骤; 以及用含有氮化合物的碱性汽提溶液处理含硅膜的第二步骤。 可以提供一种方法，用于允许除去干法汽提之前没有常规去除的含硅膜通过基于剥离溶液（湿剥离）的汽提方法除去。

    SINGLE-CRYSTAL DIAMOND GROWTH BASE MATERIAL AND METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND SUBSTRATE
    5.
    发明申请
    SINGLE-CRYSTAL DIAMOND GROWTH BASE MATERIAL AND METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND SUBSTRATE 有权
    单晶金刚石生长基材和制造单晶金刚石基板的方法

    公开(公告)号：US20110315074A1

    公开(公告)日：2011-12-29

    申请号：US13159074

    申请日：2011-06-13

    申请人： Hitoshi NOGUCHI ,  Shozo SHIRAI

    发明人： Hitoshi NOGUCHI ,  Shozo SHIRAI

    IPC分类号： C30B25/18 ,  B32B9/04 ,  B32B5/00 ,  B32B15/04

    CPC分类号： C30B29/04 ,  C30B25/183 ,  Y10T428/263 ,  Y10T428/266 ,  Y10T428/30

    摘要： An object is to provide a single-crystal diamond growth base material and a method for manufacturing a single-crystal diamond substrate that enable growing single-crystal diamond having a large area and excellent crystallinity and inexpensively manufacturing a high-quality single-crystal diamond substrate.A single-crystal diamond growth base material on which single-crystal diamond is grown comprises at least: a base substrate consisting of a material having a linear expansion coefficient smaller than that of MgO and not smaller than 0.5×10−6/K; a single-crystal MgO layer formed on a face of the base substrate where the single-crystal diamond is grown by a bonding method; and a film constituted of any one of an iridium film, a rhodium film, and a platinum film heteroepitaxially grown on the single-crystal MgO layer.

    摘要翻译： 本发明的目的是提供一种单晶金刚石生长基材和用于制造单晶金刚石基底的方法，其使得能够生长具有大面积和优异结晶度的单晶金刚石，并且廉价地制造高品质单晶金刚石基底 。 生长单晶金刚石的单晶金刚石生长基材至少包括：线状膨胀系数小于MgO且不小于0.5×10-6 / K的材料构成的基底; 通过接合方法在单晶金刚石生长的基底上形成的单晶MgO层; 以及由在单晶MgO层上异质外延生长的铱膜，铑膜和铂膜中的任一种构成的膜。

    Coated-type silicon-containing film stripping process
    7.
    发明授权
    Coated-type silicon-containing film stripping process 有权
    涂层式含硅膜剥离工艺

    公开(公告)号：US08652267B2

    公开(公告)日：2014-02-18

    申请号：US12591115

    申请日：2009-11-09

    申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Shozo Shirai

    发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Shozo Shirai

    IPC分类号： B08B3/00

    CPC分类号： G03F7/423 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/425

    摘要： There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).

    摘要翻译： 公开了一种涂覆型含硅膜剥离工艺，用于剥离以除去通过在基板上涂布用于光刻的含硅膜组合物而获得的涂覆型含硅膜，该涂覆型含硅膜至少包括：第一 用含有硫酸根离子和/或氟离子的酸性汽提溶液处理含硅膜的步骤; 以及用含有氮化合物的碱性汽提溶液处理含硅膜的第二步骤。 可以提供一种方法，用于允许除去干法汽提之前没有常规去除的含硅膜通过基于剥离溶液（湿剥离）的汽提方法除去。

    PHOTOMASK BLANK, PROCESSING METHOD, AND ETCHING METHOD
    9.
    发明申请
    PHOTOMASK BLANK, PROCESSING METHOD, AND ETCHING METHOD 有权
    光电白板，处理方法和蚀刻方法

    公开(公告)号：US20100248493A1

    公开(公告)日：2010-09-30

    申请号：US12732637

    申请日：2010-03-26

    申请人： Satoshi WATANABE ,  Ryuji Koitabashi ,  Shinichi Igarashi ,  Yoshio Kawai ,  Shozo Shirai

    发明人： Satoshi WATANABE ,  Ryuji Koitabashi ,  Shinichi Igarashi ,  Yoshio Kawai ,  Shozo Shirai

    IPC分类号： H01L21/308 ,  G03F1/00

    CPC分类号： G03F1/58 ,  G03F1/14 ,  G03F1/26 ,  G03F1/54 ,  G03F1/80

    摘要： A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.

    摘要翻译： 提供一种光掩模坯料，其包括透明基板，包括由铬基材料构成的最外层的单层或多层膜和蚀刻掩模膜。 蚀刻掩模膜是由包含可水解硅烷，交联促进剂和有机溶剂的水解缩合物并且具有1-10nm厚度的组合物形成的氧化硅基底膜。 蚀刻掩模膜具有高耐氯干蚀刻性，确保光掩模坯料的高精度加工。