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2238 records (took 0.023 seconds)

    Image-based overlay metrology and monitoring using through-focus imaging
    41.
    发明授权
    Image-based overlay metrology and monitoring using through-focus imaging 有权

    公开(公告)号：US10817999B2

    公开(公告)日：2020-10-27

    申请号：US16034093

    申请日：2018-07-12

    Applicant: KLA-Tencor Corporation

    Inventor： David Gready ,  Nimrod Shuall ,  Claire Staniunas

    IPC: G06T7/00 ,  G06T7/68 ,  G05B13/02

    Abstract: A metrology system includes a controller coupled to a detector to image a sample based on the light captured by an objective lens, where an object plane of the detector with respect to the sample is adjustable. The controller may direct the detector to generate reference images of an overlay target on the sample at multiple object planes including at least a first reference image at a first sample layer and a second reference image at a second sample layer. The controller may further determine a reference overlay between the first layer and the second layer at the overlay target based on the first reference image and the second reference image. The controller may further select a measurement object plane for single-image overlay determination that corresponds to the reference overlay within a selected tolerance. The controller may further determine overlay for additional overlay targets at the measurement plane.

    Multi-column spacing for photomask and reticle inspection and wafer print check verification
    43.
    发明授权
    Multi-column spacing for photomask and reticle inspection and wafer print check verification 有权

    公开(公告)号：US10777377B2

    公开(公告)日：2020-09-15

    申请号：US15879120

    申请日：2018-01-24

    Applicant: KLA-Tencor Corporation

    Inventor： Robert Haynes ,  Frank Chilese ,  Moshe E. Preil

    IPC: H01J37/06 ,  H01J37/28 ,  H01J37/20 ,  G03F1/86 ,  H01J37/244 ,  H01L21/66

    Abstract: A multi-column assembly for a scanning electron microscopy (SEM) system is disclosed. The multi-column assembly includes a plurality of electron-optical columns arranged in an array defined by one or more spacings. Each electron-optical column includes one or more electron-optical elements. The plurality of electron-optical columns is configured to characterize one or more field areas on a surface of a sample secured on a stage. The number of electron-optical columns in the plurality of electron-optical columns equals an integer number of inspection areas in a field area of the one or more field areas. The one or more spacings of the plurality of electron-optical columns correspond to one or more dimensions of the inspection areas.

    Full beam metrology for X-ray scatterometry systems
    44.
    发明授权
    Full beam metrology for X-ray scatterometry systems 有权

    公开(公告)号：US10775323B2

    公开(公告)日：2020-09-15

    申请号：US15419130

    申请日：2017-01-30

    Applicant: KLA-Tencor Corporation

    Inventor： Antonio Arion Gellineau ,  Thaddeus Gerard Dziura ,  John J. Hench ,  Andrei Veldman ,  Sergey Zalubovsky

    IPC: G01N23/2055 ,  G01N23/20066 ,  G06T7/60 ,  G01N23/205

    Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.

    Integrated use of model-based metrology and a process model
    45.
    发明授权
    Integrated use of model-based metrology and a process model 有权

    公开(公告)号：US10769320B2

    公开(公告)日：2020-09-08

    申请号：US14107850

    申请日：2013-12-16

    Applicant: KLA-Tencor Corporation

    Inventor： Alexander Kuznetsov ,  Andrei V. Shchegrov ,  Stilian Ivanov Pandev

    IPC: G06F30/20 ,  G03F7/20 ,  G06F30/398

    Abstract: Methods and systems for performing measurements based on a measurement model integrating a metrology-based target model with a process-based target model. Systems employing integrated measurement models may be used to measure structural and material characteristics of one or more targets and may also be used to measure process parameter values. A process-based target model may be integrated with a metrology-based target model in a number of different ways. In some examples, constraints on ranges of values of metrology model parameters are determined based on the process-based target model. In some other examples, the integrated measurement model includes the metrology-based target model constrained by the process-based target model. In some other examples, one or more metrology model parameters are expressed in terms of other metrology model parameters based on the process model. In some other examples, process parameters are substituted into the metrology model.

    Reticle optimization algorithms and optimal target design
    47.
    发明授权
    Reticle optimization algorithms and optimal target design 有权

    公开(公告)号：US10754261B2

    公开(公告)日：2020-08-25

    申请号：US15571427

    申请日：2017-06-06

    Applicant: KLA-Tencor Corporation

    Inventor： Yoel Feler ,  Vladimir Levinski

    IPC: G03F7/20 ,  G03F1/44

    Abstract: Metrology target designs on the reticle and on the wafer, and target design and processing methods are provided. Target designs comprise coarse pitched periodic structures having fine pitched sub-elements, which vary in sub-element CD and/or height, an orthogonal periodic structure, perpendicular to the measurement direction, with an orthogonal unresolved pitch among periodically recurring bars, which provide a calibration parameter for achieving well-printed targets. Orthogonal periodic structures may be designed on the reticle and be unresolved, or be applied in cut patterns on the process layer, with relatively low sensitivity to the cut layer overlay. Designed targets may be used for overlay metrology as well as for measuring process parameters such as scanner aberrations and pitch walk.

    Misregistration Measurements Using Combined Optical and Electron Beam Technology
    48.
    发明申请
    Misregistration Measurements Using Combined Optical and Electron Beam Technology 审中-公开

    公开(公告)号：US20200266112A1

    公开(公告)日：2020-08-20

    申请号：US16477552

    申请日：2019-06-04

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Nadav Gutman

    IPC: H01L21/66 ,  H01L21/67

    Abstract: A misregistration metrology system useful in manufacturing semiconductor device wafers including an optical misregistration metrology tool configured to measure misregistration at at least one target between two layers of a semiconductor device which is selected from a batch of semiconductor device wafers which are intended to be identical, an electron beam misregistration metrology tool configured to measure misregistration at the at least one target between two layers of a semiconductor device which is selected from the batch and a combiner operative to combine outputs of the optical misregistration metrology tool and the electron beam misregistration metrology tool to provide a combined misregistration metric.

    Deflection array apparatus for multi-electron beam system
    49.
    发明授权
    Deflection array apparatus for multi-electron beam system 有权

    公开(公告)号：US10748739B2

    公开(公告)日：2020-08-18

    申请号：US16230325

    申请日：2018-12-21

    Applicant: KLA-Tencor Corporation

    Inventor： Xinrong Jiang ,  Christopher Sears

    IPC: H01J37/12 ,  H01J37/06

    Abstract: An optical characterization system utilizing a micro-lens array (MLA) is provided. The system may include an electron source and a MLA including a micro-deflection array (MDA). The MDA may include an insulator substrate and a plurality of hexapole electrostatic deflectors disposed on the insulator substrate. The MDA may further include a plurality of voltage connecting lines configured to electrically couple the plurality of hexapole electrostatic deflectors to one or more voltage sources. The MDA may be configured to split a primary electron beam from the electron source into a plurality of primary electron beamlets. The system may be configured to focus the plurality of primary electron beamlets at a wafer plane.

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