公开(公告)号：US09166065B2

公开(公告)日：2015-10-20

申请号：US13419011

申请日：2012-03-13

Applicant: Yuichi Ohsawa ,  Tadaomi Daibou ,  Yushi Kato ,  Eiji Kitagawa ,  Saori Kashiwada ,  Minoru Amano ,  Junichi Ito

Inventor： Yuichi Ohsawa ,  Tadaomi Daibou ,  Yushi Kato ,  Eiji Kitagawa ,  Saori Kashiwada ,  Minoru Amano ,  Junichi Ito

IPC: H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01F10/12 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00 ,  G11C11/16

CPC classification number: H01L29/82 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/126 ,  H01F10/3286 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.

Abstract translation: 根据一个实施例，磁阻效应元件包括在垂直于膜平面的方向上具有磁各向异性和不变磁化方向的第一磁性膜，在垂直于膜的方向上具有磁各向异性和可变磁化方向的第二磁性膜 平面和第一磁性膜与第二磁性膜之间的非磁性膜。 第一和第二磁性膜中的至少一个包括第一磁性层。 第一磁性层包括稀土金属，过渡金属和硼。

公开(公告)号：US09165585B2

公开(公告)日：2015-10-20

申请号：US13235237

申请日：2011-09-16

Applicant: Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Kenji Noma ,  Hiroaki Yoda

Inventor： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Kenji Noma ,  Hiroaki Yoda

IPC: G11C11/02 ,  G11B5/66 ,  G01R33/09 ,  H01F10/30 ,  G11C11/16

CPC classification number: H01L43/02 ,  G01R33/091 ,  G01R33/093 ,  G11B5/66 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.

Abstract translation: 根据一个实施例，磁阻元件包括具有可变磁化方向的记录层，具有不变磁化方向的参考层，设置在记录层和参考层之间的中间层，以及设置在记录层的表面上的第一缓冲层 该记录层与设置有中间层的记录层的表面相对。 记录层包括设置在中间层的侧面并且包含CoFe作为主要成分的第一磁性层和设置在第一缓冲层的侧面并且包含CoFe作为主要成分的第二磁性层， 第一磁性层中的Fe浓度高于第二磁性层中的Fe浓度。 第一缓冲层包含氮化合物。

公开(公告)号：US09147456B2

公开(公告)日：2015-09-29

申请号：US13537947

申请日：2012-06-29

Applicant: Eiji Kitagawa

Inventor： Eiji Kitagawa

IPC: G11C11/00 ,  G11C11/16 ,  H01L27/22

CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222

Abstract: A magnetic memory according to an embodiment includes: a magnetoresistive element including a first magnetic layer having a magnetization direction not to be changed by spin-injection writing, a second magnetic layer having a magnetization direction to be changeable by the spin-injection writing, and a tunnel barrier layer provided between the first and second magnetic layers; a first interconnect electrically connected to one of the first and second magnetic layers; a select transistor, with one of a source and drain thereof being electrically connected to the other one of the first and second magnetic layers; a second interconnect electrically connected to the other one of the source and drain; a diode having one terminal electrically connected to the other one of the first and second magnetic layers; a third interconnect electrically connected to the other terminal of the diode; and a sense amplifier electrically connected to the third interconnect.

Abstract translation: 根据实施例的磁存储器包括：磁阻元件，包括具有不被自旋注入写入改变的磁化方向的第一磁性层，具有可通过自旋注入写入改变的磁化方向的第二磁性层，以及 设置在所述第一和第二磁性层之间的隧道势垒层; 电连接到所述第一和第二磁性层之一的第一互连; 选择晶体管，其源极和漏极之一电连接到第一和第二磁性层中的另一个; 电源连接到源极和漏极中的另一个的第二互连; 一个二极管，其一个端子电连接到第一和第二磁性层中的另一个; 电连接到二极管的另一个端子的第三互连; 以及电连接到第三互连的感测放大器。

公开(公告)号：US09117924B2

公开(公告)日：2015-08-25

申请号：US13729297

申请日：2012-12-28

Applicant: Eiji Kitagawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Yushi Kato ,  Tadaomi Daibou

Inventor： Eiji Kitagawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Yushi Kato ,  Tadaomi Daibou

IPC: H01L29/82 ,  H01L29/66 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L29/82 ,  H01L29/66007 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer.

Abstract translation: 根据一个实施例，磁存储元件包括具有第一表面和与第一表面相对的第二表面的第一磁性层，第二磁性层，设置在第一磁性层的第一表面和 第二磁性层，设置在第一磁性层的第二表面上的层，含有B的层和选自Hf，Al和Mg的至少一种元素，以及设置在第一磁性层的侧壁上的绝缘层 中间层，所述绝缘层含有选自所述层中所含的Hf，Al和Mg中的至少一种元素。

公开(公告)号：US08665639B2

公开(公告)日：2014-03-04

申请号：US13407039

申请日：2012-02-28

Applicant: Toshihiko Nagase ,  Tadashi Kai ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Masahiko Nakayama ,  Makoto Nagamine ,  Shigeto Fukatsu ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

Inventor： Toshihiko Nagase ,  Tadashi Kai ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Masahiko Nakayama ,  Makoto Nagamine ,  Shigeto Fukatsu ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

IPC: G11C11/00

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.

Abstract translation: 根据一个实施例，磁阻元件包括具有垂直和可变磁化的第一磁性层，具有垂直和不变磁化的第二磁性层以及第一和第二磁性层之间的第一非磁性层。 第一磁性层具有第一和第二铁磁材料的叠层结构。 第一磁性层的磁化方向由穿过第一磁性层，第一非磁性层和第二磁性层的电流改变。 第二铁磁材料的垂直磁各向异性小于第一铁磁材料的垂直磁各向异性。 第一铁磁材料的膜厚比第二铁磁材料薄。

公开(公告)号：US08531875B2

公开(公告)日：2013-09-10

申请号：US13426139

申请日：2012-03-21

Applicant: Satoshi Yanagi ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Jyunichi Ozeki ,  Hisanori Aikawa ,  Naoharu Shimomura ,  Masatoshi Yoshikawa ,  Minoru Amano ,  Shigeki Takahashi ,  Hiroaki Yoda

Inventor： Satoshi Yanagi ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Jyunichi Ozeki ,  Hisanori Aikawa ,  Naoharu Shimomura ,  Masatoshi Yoshikawa ,  Minoru Amano ,  Shigeki Takahashi ,  Hiroaki Yoda

IPC: H01L29/82 ,  G11C11/15

CPC classification number: H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.

Abstract translation: 根据一个实施例，磁存储器包括至少一个包括磁阻元件的存储单元以及第一和第二电极。 元件包括第一磁性层，隧道势垒层，第二磁性层和设置在第二磁性层上并且具有与第二磁性层的磁化方向反平行的磁化的第三磁性层。 第一磁性层的上表面的直径小于隧道势垒层的下表面的直径。 第二磁性层的下表面的直径不大于隧道势垒层的上表面的直径。

公开(公告)号：US08530987B2

公开(公告)日：2013-09-10

申请号：US13432486

申请日：2012-03-28

Applicant: Hisanori Aikawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Naoharu Shimomura ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Jyunichi Ozeki ,  Hiroaki Yoda ,  Satoshi Yanagi

Inventor： Hisanori Aikawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Naoharu Shimomura ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Jyunichi Ozeki ,  Hiroaki Yoda ,  Satoshi Yanagi

IPC: H01L29/82 ,  G11C11/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228

Abstract: A magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.

Abstract translation: 磁存储器包括磁阻元件。 磁阻元件包括具有不变磁化方向的参考层，具有可变磁化方向的存储层和设置在参考层和存储层之间的间隔层。 存储层具有包括第一和第二磁性层的多层结构，第二磁性层设置在第一磁性层和间隔层之间，其磁各向异性能量低于第一磁性层的磁各向异性能，交换耦合常数Jex 第一磁性层和第二磁性层之间的距离不大于5erg / cm2。