Invention Application
- Patent Title: MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Patent Title (中): 磁性元件和磁记忆
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Application No.: US12409716Application Date: 2009-03-24
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Publication No.: US20090243008A1Publication Date: 2009-10-01
- Inventor: Eiji Kitagawa , Masatoshi Yoshikawa , Toshihiko Nagase , Tadaomi Daibou , Makoto Nagamine , Katsuya Nishiyama , Tatsuya Kishi , Hiroaki Yoda
- Applicant: Eiji Kitagawa , Masatoshi Yoshikawa , Toshihiko Nagase , Tadaomi Daibou , Makoto Nagamine , Katsuya Nishiyama , Tatsuya Kishi , Hiroaki Yoda
- Priority: JP2008-084938 20080327
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ν is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer. |√{square root over (2)}a1/2−a2|/a2
Public/Granted literature
- US08218355B2 Magnetoresistive element and magnetic memory Public/Granted day:2012-07-10
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