公开(公告)号：US5581571A

公开(公告)日：1996-12-03

申请号：US477105

申请日：1995-06-07

Applicant: Nick Holonyak, Jr. ,  Steven A. Maranowski ,  Fred A. Kish

Inventor： Nick Holonyak, Jr. ,  Steven A. Maranowski ,  Fred A. Kish

IPC: H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  H01L33/00 ,  H01L33/30 ,  H01S5/00 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC classification number: H01L29/517 ,  B82Y20/00 ,  H01L21/02178 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/28264 ,  H01L21/31666 ,  H01L29/66522 ,  H01L33/0062 ,  H01L33/30 ,  H01S5/16 ,  H01S5/168 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/32308 ,  H01S5/34313

Abstract: A semiconductor laser device includes, in a disclosed embodiment: a semiconductor active region disposed between upper and lower confining regions of opposite type semiconductor material; reflective facets at opposing edges of the active and confining regions; at least one of the confining regions including a layer of relatively high aluminum fraction aluminum-bearing III-V material between layers of relatively low aluminum fraction aluminum bearing III-V material, the layer of relatively high aluminum fraction material having, at its edges and adjacent the facets, spikes of native oxide of aluminum; and electrodes for applying electric potential across the upper and lower confining regions.

Abstract translation: 在所公开的实施例中，半导体激光器件包括：设置在相反型半导体材料的上限制区域和下限制区域之间的半导体有源区域; 在活动和限制区域的相对边缘处的反射小面; 所述约束区域中的至少一个包括在具有相对低的铝部分铝III-V材料的层之间的相对较高的铝部分含铝III-V材料的层，所述相对高的铝部分材料层在其边缘处具有 相邻的面，铝的天然氧化物的尖峰; 以及用于在上限和下限限区域施加电位的电极。

公开(公告)号：US5353295A

公开(公告)日：1994-10-04

申请号：US927822

申请日：1992-08-10

Applicant: Nick Holonyak, Jr. ,  Nada El-Zein ,  Fred A. Kish

Inventor： Nick Holonyak, Jr. ,  Nada El-Zein ,  Fred A. Kish

IPC: H01L21/316 ,  H01S5/026 ,  H01S5/10 ,  H01S5/40 ,  H01S3/19

CPC classification number: H01L21/02178 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/31666 ,  H01S5/10 ,  H01S5/1021 ,  H01S5/026 ,  H01S5/1028 ,  H01S5/1071 ,  H01S5/4031 ,  H01S5/4056 ,  H01S5/4068

Abstract: In a form of the disclosure an array of coupled cavities (called minicavities) of a QWH semiconductor laser are defined by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. The native oxide confines the injected carriers and optical field within the cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe. Single-longitudinal-mode operation is exhibited over an extended range. In a further form of the disclosure, two linear arrays of end-coupled minicavities are arranged side by side to obtain a two dimensional array, with resultant lateral coupling between the linear arrays. The two dimensional array exhibits mode switching and multiple switching in the light power (L) versus current (I) characteristic (L-I) with increasing current. In another form of the disclosure, a stripe laser is transversely coupled (or side-coupled) with a linear array of end-coupled minicavities. Bistability and switching are demonstrated in the light versus current (L-I) characteristic of a native-oxide-defined structure of this type. The device, with internally coupled elements and the current partitioned among the elements, exhibits a large hysteresis in the L-I curve, with switching from the stimulated to the spontaneous regime occurring over substantial power (light) and current ranges.

Abstract translation: 在本公开的形式中，QWH半导体激光器的耦合空腔（称为微小电位）的阵列由含铝III-V半导体材料的天然氧化物限定，并且沿纵向方向串联地串联设置。 天然氧化物将注入的载流子和光场限制在空腔内，导致沿着激光条带周期性地分布的反射和光学反馈。 单纵模操作在扩展范围内展现。 在本公开的另一形式中，并行布置两个端部耦合的微小的线性阵列以获得二维阵列，并且在线性阵列之间产生横向耦合。 二维阵列随着电流的增加呈现模式切换和光功率（L）与电流（I）特性（L-I）的多次切换。 在本公开的另一种形式中，条形激光器与端部耦合的微型半导体的线性阵列横向耦合（或侧耦合）。 在这种类型的自然氧化物定义的结构的光 - 电流（L-I）特性中证明了双稳态和开关。 具有内部耦合元件和在元件之间分配的电流的器件在L-I曲线中表现出大的滞后，从被激励到自发状态从基本功率（光）和电流范围发生。

公开(公告)号：US08716087B2

公开(公告)日：2014-05-06

申请号：US13953693

申请日：2013-07-29

Applicant: Nissan Motor Co., Ltd. ,  Rohm Co., Ltd.

Inventor： Satoshi Tanimoto ,  Noriaki Kawamoto ,  Takayuki Kitou ,  Mineo Miura

IPC: H01L29/24

CPC classification number: H01L29/66068 ,  H01L21/049 ,  H01L21/31666 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/7802

Abstract: A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).

公开(公告)号：US08222648B2

公开(公告)日：2012-07-17

申请号：US11991249

申请日：2006-08-22

Applicant: Satoshi Tanimoto ,  Noriaki Kawamoto ,  Takayuki Kitou ,  Mineo Miura

Inventor： Satoshi Tanimoto ,  Noriaki Kawamoto ,  Takayuki Kitou ,  Mineo Miura

IPC: H01L29/24

CPC classification number: H01L29/66068 ,  H01L21/049 ,  H01L21/31666 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/7802

Abstract: A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).

Abstract translation: 碳化硅半导体器件（90）包括：1）碳化硅衬底（1）; 2）由多晶硅制成的栅电极（7） 和3）夹在所述碳化硅衬底（1）和所述栅电极（7）之间的ONO绝缘膜（9），从而形成栅极结构，所述ONO绝缘膜（9）包括从所述碳化硅衬底 （1）：a）第一氧化硅膜（O）（10），b）SiN膜（N）（11），和c）SiN热氧化膜（O）（12,12a，12b）。 氮在以下位置中的至少一个中包括：i）在第一氧化物硅膜（O）（10）中和在碳化硅衬底（1）附近，以及ii）在碳化硅衬底 （1）和第一氧化硅膜（O）（10）。

公开(公告)号：US08011319B2

公开(公告)日：2011-09-06

申请号：US12573394

申请日：2009-10-05

Applicant: Hin-Yiu Chung ,  Thomas Gutt

Inventor： Hin-Yiu Chung ,  Thomas Gutt

IPC: B05C11/00

CPC classification number: H01L21/3247 ,  H01L21/02178 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31666 ,  H01L21/3228 ,  H01L21/67115 ,  H01L21/68735 ,  H01S5/18311 ,  Y10S438/94

Abstract: A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

Abstract translation: 提出了一种保持装置，其中在单衬底工艺中处理待氧化的层。 处理期间的处理温度直接记录在基板或基板的保持装置上。 该方法包括将在衬层的边缘区域中被覆盖的未被覆盖的层的衬底引入到加热装置中，将氧化气体传递到衬底上，将衬底加热到​​处理温度，该过程温度在 通过保持基板的保持装置的温度进行处理，并且在处理期间将基板温度控制到期望的温度或温度曲线。

公开(公告)号：US07932160B2

公开(公告)日：2011-04-26

申请号：US11883706

申请日：2006-02-02

Applicant: Guilhem Almuneau ,  Antonio Munoz-Yague ,  Thierry Camps ,  Chantal Fontaine ,  Véronique Bardinal-Delagnes

Inventor： Guilhem Almuneau ,  Antonio Munoz-Yague ,  Thierry Camps ,  Chantal Fontaine ,  Véronique Bardinal-Delagnes

IPC: H01L21/76

CPC classification number: H01L21/02255 ,  H01L21/02178 ,  H01L21/02233 ,  H01L21/31662 ,  H01L21/31666

Abstract: The invention relates to a method of producing a semiconductor device, comprising the following steps consisting in: forming first, second and third semiconductor layers (1, 2, 3), whereby the first and second layers (1, 3) contain a smaller concentration of oxidizable species than the second layer (2); forming a mask (4) on the third layer (3); and oxidizing the second layer (2) with the diffusion of oxidizing species through the third layer (3).

Abstract translation: 本发明涉及一种制造半导体器件的方法，包括以下步骤：形成第一，第二和第三半导体层（1,2,3），由此第一和第二层（1,3）含有较小的浓度 的可氧化物质比第二层（2）; 在所述第三层（3）上形成掩模（4）; 以及氧化物质通过第三层（3）的扩散来氧化第二层（2）。

公开(公告)号：US20060016397A1

公开(公告)日：2006-01-26

申请号：US11234156

申请日：2005-09-26

Applicant: Hironobu Sai

Inventor： Hironobu Sai

IPC: C23C16/00

CPC classification number: H01L21/67253 ,  H01L21/02178 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31666 ,  H01L33/145 ,  H01S5/0042 ,  H01S5/18311 ,  H01S5/18358

Abstract: A sample stand is set in a chamber provided with an observation window on its upper surface and a heater for heating a sample is provided in the vicinity of the sample stand. Then, a microscope, a camera and a television monitor are connected and mounted outside the observation window of the chamber. The microscope is mounted such that a specific layer of the sample is focused on and can be observed. According to a manufacturing method of the preset invention, oxidation treatment is performed in such equipment while an oxidation process of the specific layer (semiconductor layer for selective oxidation) of the sample is observed. As a result, the amount of oxidation of the semiconductor layer for selective oxidation can be strictly controlled, a semiconductor light emitting device which restricts a current into a certain region can be obtained with high yield ratio, and there is obtained an oxidation furnace which can precisely control the amount of oxidation of the semiconductor layer for selective oxidation.

公开(公告)号：US06979581B2

公开(公告)日：2005-12-27

申请号：US10318121

申请日：2002-12-13

Applicant: Hironobu Sai

Inventor： Hironobu Sai

IPC: H01L21/66 ,  H01L21/00 ,  H01L21/316 ,  H01S5/183 ,  H01S5/343 ,  H01L21/20

CPC classification number: H01L21/67253 ,  H01L21/02178 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31666 ,  H01L33/145 ,  H01S5/0042 ,  H01S5/18311 ,  H01S5/18358

Abstract: A sample stand is set in a chamber provided with an observation window on its upper surface and a heater for heating a sample is provided in the vicinity of the sample stand. Then, a microscope, a camera and a television monitor are connected and mounted outside the observation window of the chamber. The microscope is mounted such that a specific layer of the sample is focused on and can be observed. According to a manufacturing method of the preset invention, oxidation treatment is performed in such equipment while an oxidation process of the specific layer (semiconductor layer for selective oxidation) of the sample is observed. As a result, the amount of oxidation of the semiconductor layer for selective oxidation can be strictly controlled, a semiconductor light emitting device which restricts a current into a certain region can be obtained with high yield ratio, and there is obtained an oxidation furnace which can precisely control the amount of oxidation of the semiconductor layer for selective oxidation.

Abstract translation: 将样品台设置在其上表面上设置有观察窗的室中，并且在样品台附近设置用于加热样品的加热器。 然后，将显微镜，照相机和电视监视器连接并安装在室的观察窗外部。 安装显微镜使得样品的特定层聚焦并可以观察到。 根据本发明的制造方法，在这样的设备中进行氧化处理，同时观察样品的特定层（选择性氧化的半导体层）的氧化工艺。 结果，可以严格控制用于选择性氧化的半导体层的氧化量，可以以高屈服比获得限制电流进入某一区域的半导体发光器件，并且获得可以 精确地控制用于选择性氧化的半导体层的氧化量。

公开(公告)号：US06933181B2

公开(公告)日：2005-08-23

申请号：US10620430

申请日：2003-07-17

Applicant: Kaoru Inoue ,  Yoshito Ikeda ,  Katsunori Nishii ,  Yutaka Hirose

Inventor： Kaoru Inoue ,  Yoshito Ikeda ,  Katsunori Nishii ,  Yutaka Hirose

IPC: H01L21/316 ,  H01L21/335 ,  H01L29/20 ,  H01L29/778 ,  H01L21/00

CPC classification number: H01L29/66462 ,  H01L21/02178 ,  H01L21/02238 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/31666 ,  H01L29/2003 ,  H01L29/7787 ,  Y10S148/113

Abstract: In a method for fabricating a semiconductor device, a first semiconductor layer of aluminum gallium nitride is first formed on a substrate, and a protection film containing silicon is then formed on the first semiconductor layer in such a manner that a device-isolation region is uncovered. Thereafter, the method further includes the step of heat-treating the first semiconductor layer in an oxidizing atmosphere whose temperature is adjusted to be within a range of 950° C. or more and 1050° C. or less.

Abstract translation: 在制造半导体器件的方法中，首先在衬底上形成氮化镓铝的第一半导体层，然后在第一半导体层上形成包含硅的保护膜，使得器件隔离区域不被覆盖 。 此后，该方法还包括在温度调节在950℃以上且1050℃以下的氧化气氛中对第一半导体层进行热处理的工序。

公开(公告)号：US20030219994A1

公开(公告)日：2003-11-27

申请号：US10340481

申请日：2003-01-10

Inventor： William D. Goodhue

IPC: H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02241 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02269 ,  H01L21/02362 ,  H01L21/31604 ,  H01L21/31666 ,  H01L2924/0002 ,  Y10S438/952 ,  H01L2924/00

Abstract: A method passivates a surface of a semiconductor structure. The method provides III-V semiconductor material having a surface to be passivated. Upon the surface of the III-V semiconductor material to be passivated an oxide layer is formed. Thereafter, the surface of the III-V semiconductor material having the oxide layer is passivated, without desorption of the oxide layer and in a vacuum of 2null10null6 Torr, with a material having the ability to intermix with the oxide layer so as to exchange oxygen, passivation layer material, and III-V semiconductor material therebetween to form graded layers of oxidized III-V and passivation material.

Abstract translation: 一种方法钝化半导体结构的表面。 该方法提供具有待钝化表面的III-V半导体材料。 在要钝化的III-V半导体材料的表面上形成氧化物层。 此后，具有氧化物层的III-V族半导体材料的表面被钝化，而不会氧化层的解吸，并且在2×10 -6乇的真空中，具有与氧化物层混合的材料，以便 以在其间交换氧，钝化层材料和III-V半导体材料，以形成氧化III-V和钝化材料的分级层。