公开(公告)号：US20160055288A1

公开(公告)日：2016-02-25

申请号：US14675683

申请日：2015-03-31

申请人： Samsung Electronics Co., Ltd.

发明人： Yong-Jin CHUN ,  Suk-Joo LEE ,  BYOUNG-IL CHOI

IPC分类号： G06F17/50 ,  H01L21/66 ,  H01L21/027

CPC分类号： H01L22/12 ,  G03F7/706 ,  G03F7/70641

摘要： A method of detecting focus shift in a lithography process, a method of analyzing an error of a transferred pattern using the same, and a method of manufacturing a semiconductor device using the methods are provided. The focus shift detecting method of a lithography process comprises generating a first contour band of a mask pattern between a first focus and a second focus, generating a second contour of the mask pattern between the first focus and a third focus, and determining whether focus shift of the mask pattern occurs using an intersection of the first contour band and the second contour band.

摘要翻译： 提供了一种在光刻工艺中检测焦点偏移的方法，使用该方法分析转印图案的误差的方法，以及使用该方法制造半导体器件的方法。 光刻处理的聚焦偏移检测方法包括在第一焦点和第二焦点之间产生掩模图案的第一轮廓带，在第一焦点和第三焦点之间产生掩模图案的第二轮廓，并且确定是否聚焦移位 使用第一轮廓带和第二轮廓带的交点发生掩模图案。

公开(公告)号：US20160041063A1

公开(公告)日：2016-02-11

申请号：US14818703

申请日：2015-08-05

申请人： CANON KABUSHIKI KAISHA

发明人： Yasunori Furukawa

IPC分类号： G01M11/02

CPC分类号： G01M11/0221 ,  G01J1/4257 ,  G01J9/00 ,  G01M11/0207 ,  G01M11/0242 ,  G03F7/706

摘要： The method enables acquiring centroid positions of light spots formed on an optical detector by multiple microlenses arranged mutually coplanarly in a wavefront sensor. The method includes a first step of estimating, by using known centroid positions or known intensity peak positions of first and second light spots respectively formed by first and second microlenses in the multiple microlenses, a position of a third light spot formed by a third microlens, a second step of setting, by using the estimated position of the third light spot, a calculation target area for a centroid position of the third light spot on the optical detector, and a third step of calculating the centroid position of the third light spot in the calculation target area.

摘要翻译： 该方法能够通过在波前传感器中相互共面布置的多个微透镜来获得在光学检测器上形成的光点的质心位置。 该方法包括第一步骤，通过使用由多个微透镜中的第一和第二微透镜分别形成的第一和第二光点的已知重心位置或已知的强度峰值位置来估计由第三微透镜形成的第三光点的位置， 第二步骤，通过使用第三光点的估计位置设置光学检测器上的第三光点的重心位置的计算目标区域，以及第三步骤，计算第三光点的重心位置 计算目标区域。

公开(公告)号：US20160033873A1

公开(公告)日：2016-02-04

申请号：US14792758

申请日：2015-07-07

申请人： Carl Zeiss SMT GmbH

发明人： Boris Bittner ,  Norbert Wabra ,  Martin von Hodenberg

IPC分类号： G03F7/20

CPC分类号： G03F7/7015 ,  G03F7/70058 ,  G03F7/70258 ,  G03F7/70525 ,  G03F7/706 ,  G03F7/70891

摘要： A projection exposure apparatus for microlithography includes a projection lens which includes a plurality of optical elements for imaging mask structures onto a substrate during an exposure process. The projection exposure apparatus also includes at least one manipulator configured to change, as part of a manipulator actuation, the optical effects of at least one of the optical elements within the projection lens by changing a state variable of the optical element along a predetermined travel. The projection exposure apparatus further includes an algorithm generator configured to generate a travel generating optimization algorithm, adapted to at least one predetermined imaging parameter, on the basis of the at least one predetermined imaging parameter.

摘要翻译： 用于微光刻的投影曝光装置包括投影透镜，其包括用于在曝光处理期间将掩模结构成像到基板上的多个光学元件。 投影曝光装置还包括至少一个操纵器，其构造成通过沿预定行程改变光学元件的状态变量，作为操纵器致动的一部分，改变投影透镜内的至少一个光学元件的光学效果。 投影曝光装置还包括算法生成器，其被配置为基于至少一个预定成像参数生成适于至少一个预定成像参数的行进生成优化算法。

公开(公告)号：US20160004168A1

公开(公告)日：2016-01-07

申请号：US14853443

申请日：2015-09-14

申请人： Carl Zeiss SMT GmbH

发明人： Jens Timo NEUMANN ,  Frank SCHLESENER

IPC分类号： G03F7/20 ,  G01M11/02

CPC分类号： G03F7/70133 ,  G01M11/0207 ,  G01M11/0242 ,  G03F7/70591 ,  G03F7/706 ,  G03F7/7085

摘要： A method for measuring an optical symmetry property on a microlithographic projection exposure apparatus (10) together with a microlithographic projection exposure apparatus and an associated microlithographic measurement mask are disclosed. The method includes arranging at least one measurement structure (60; 66) in an exposure beam path (32) of the projection exposure apparatus, wherein the measurement structure includes a pinhole stop (62) and a diffraction grating (64) arranged within an aperture (63) of the pinhole stop. Furthermore, the method includes measuring an intensity of a diffracted radiation generated at the diffraction grating (64) after interaction of the radiation with at least one optical element (22) of the projection exposure apparatus.

摘要翻译： 公开了一种用于在微光刻投影曝光设备（10）上与微光刻投影曝光设备和相关联的微光刻测量掩模一起测量光学对称性的方法。 该方法包括在投影曝光设备的曝光光束路径（32）中布置至少一个测量结构（60; 66），其中所述测量结构包括针孔停止器（62）和布置在孔径内的衍射光栅（64） （63）针孔停止。 此外，该方法包括在辐射与投影曝光设备的至少一个光学元件（22）相互作用之后测量在衍射光栅（64）处产生的衍射辐射的强度。

公开(公告)号：US09170497B2

公开(公告)日：2015-10-27

申请号：US13790957

申请日：2013-03-08

申请人： Carl Zeiss SMT GmbH

发明人： Boris Bittner ,  Norbert Wabra ,  Martin von Hodenberg

IPC分类号： G03B27/54 ,  G03B27/42 ,  G03F7/20

CPC分类号： G03F7/7015 ,  G03F7/70058 ,  G03F7/70258 ,  G03F7/70525 ,  G03F7/706 ,  G03F7/70891

摘要： A projection exposure apparatus for microlithography includes a projection lens which includes a plurality of optical elements for imaging mask structures onto a substrate during an exposure process. The projection exposure apparatus also includes at least one manipulator configured to change, as part of a manipulator actuation, the optical effects of at least one of the optical elements within the projection lens by changing a state variable of the optical element along a predetermined travel. The projection exposure apparatus further includes an algorithm generator configured to generate a travel generating optimization algorithm, adapted to at least one predetermined imaging parameter, on the basis of the at least one predetermined imaging parameter.

摘要翻译： 用于微光刻的投影曝光装置包括投影透镜，其包括用于在曝光处理期间将掩模结构成像到基板上的多个光学元件。 投影曝光装置还包括至少一个操纵器，其构造成通过沿预定行程改变光学元件的状态变量，作为操纵器致动的一部分，改变投影透镜内的至少一个光学元件的光学效果。 投影曝光装置还包括算法生成器，其被配置为基于至少一个预定成像参数生成适于至少一个预定成像参数的行进生成优化算法。

公开(公告)号：US09116444B2

公开(公告)日：2015-08-25

申请号：US14260143

申请日：2014-04-23

申请人： CANON KABUSHIKI KAISHA

发明人： Rika Takahashi ,  Atsushi Shigenobu

IPC分类号： G03F7/20 ,  G03B27/52

CPC分类号： G03F7/70575 ,  G03B27/52 ,  G03F7/2022 ,  G03F7/705 ,  G03F7/706

摘要： In a case where a substrate is exposed to exposure light of a first wavelength band, an exposure coefficient, which is defined as an amount of fluctuation of an imaging characteristic of a projection optical system per unit of exposure energy, for the first wavelength band is calculated using data of the amount of fluctuation of the optical characteristic of the projection optical system. An exposure coefficient for a second wavelength band that is different from the first wavelength band is calculated using the exposure coefficient for the first wavelength band. In a case where the substrate is exposed to exposure light of the second wavelength band, the amount of fluctuation of the imaging characteristic of the projection optical system is calculated using the exposure coefficient for the second wavelength band.

摘要翻译： 在基板暴露于第一波长带的曝光光的情况下，对于第一波长带，曝光系数被定义为每单位曝光能量的投影光学系统的成像特性的波动量的量是 使用投影光学系统的光学特性的波动量的数据来计算。 使用第一波长带的曝光系数来计算与第一波长带不同的第二波长带的曝光系数。 在基板暴露于第二波长带的曝光光的情况下，使用第二波长带的曝光系数来计算投影光学系统的成像特性的波动量。

公开(公告)号：US09104119B2

公开(公告)日：2015-08-11

申请号：US14151652

申请日：2014-01-09

申请人： CANON KABUSHIKI KAISHA

发明人： Bunsuke Takeshita

IPC分类号： G03F7/20 ,  G03B27/54

CPC分类号： G03F7/706 ,  G03B27/54 ,  G03F7/70258

摘要： The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, a driving unit configured to drive a plurality of optical elements which form the projection optical system so as to adjust an imaging state of light which passes through the projection optical system, a detecting unit configured to detect a driving error when the driving unit drives a first optical element of the plurality of optical elements, and a control unit configured to control the driving unit to drive a second optical element different from the first optical element of the plurality of optical elements so as to reduce a change in the imaging state of the light which passes through the projection optical system due to the driving error.

摘要翻译： 本发明提供一种曝光装置，包括：投影光学系统，被配置为将掩模版的图案投影到基板上;驱动单元，被配置为驱动形成投影光学系统的多个光学元件，以调节光的成像状态 通过投影光学系统的检测单元，被配置为当驱动单元驱动多个光学元件的第一光学元件时检测驱动误差的检测单元，以及控制单元，其被配置为控制驱动单元驱动不同的第二光学元件 从多个光学元件的第一光学元件，减少由于驱动误差而通过投影光学系统的光的成像状态的变化。

公开(公告)号：US09097978B2

公开(公告)日：2015-08-04

申请号：US13365733

申请日：2012-02-03

申请人： Guo-Tsai Huang ,  Chih-Ming Ke

发明人： Guo-Tsai Huang ,  Chih-Ming Ke

IPC分类号： G03B27/68 ,  G03B27/52 ,  G03B27/54 ,  G03B27/32 ,  G03F1/44 ,  G03F7/20 ,  G03B27/44

CPC分类号： G03F7/706 ,  G03F1/44 ,  G03F7/70591 ,  G03F7/70633

摘要： Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient.

摘要翻译： 提供了表征光刻透镜质量的方法。 该方法包括选择具有第一间距的第一特征和具有不同于第一间距的第二间距的第二特征的覆盖图案，执行光刻模拟以确定与覆盖图案相关联的灵敏度系数，以及提供具有 覆盖图案。 该方法还包括用光刻工具将具有光掩模的晶片曝光以在晶片上形成覆盖图案，测量形成在晶片上的覆盖图案的相对图案放置误差，以及计算晶片的质量指标 光刻工具使用相对图案放置误差和灵敏度系数。

公开(公告)号：US09086639B2

公开(公告)日：2015-07-21

申请号：US14024659

申请日：2013-09-12

申请人： International Business Machines Corporation

发明人： Gregory R. McIntyre

IPC分类号： G01B11/14 ,  G03F1/82 ,  G01N21/956

CPC分类号： G03F1/82 ,  G01N21/956 ,  G01N2021/95676 ,  G03F1/38 ,  G03F7/706 ,  G03F7/70683

摘要： A method of fabricating an aberration monitor on a production mask used in photolithographic patterning of a semiconductor substrate is provided. The method may include placing a production mask within a nanomachine repair tool and generating, using the nanomachine repair tool, a phase shifting pattern within a region of the production mask.

摘要翻译： 提供一种制造用于半导体衬底的光刻图案中的制造掩模上的像差监视器的方法。 该方法可以包括将生产掩模放置在纳米机修复工具内，并且使用纳米机修复工具在生产掩模的区域内生成相移图案。

公开(公告)号：US20150160073A1

公开(公告)日：2015-06-11

申请号：US14401860

申请日：2013-05-29

申请人： NIKON CORPORATION

发明人： Katsura Otaki ,  Katsumi Sugisaki ,  Takashi Gemma

IPC分类号： G01J9/02

CPC分类号： G01J9/0215 ,  G01J2009/0238 ,  G01M11/0264 ,  G02B27/50 ,  G03F7/706

摘要： There is provided a wavefront measuring method for obtaining wavefront information of an optical system. The method including: irradiating the optical system with a light beam; allowing the light beam passed via the optical system to come into a diffraction grating having periodicity in a first direction; and obtaining the wavefront information based on an interference fringe formed by light beams generated from the diffraction grating. The diffraction grating including: first portions which allow light to pass therethrough; and second portions which shield light, each of the second portions being provided between two of the first portions. A ratio between a width of one of the first portions in the first direction and a width of one of the second portions in the first direction is changed in the first direction, the one of the first portions and the one of the second portions being adjacent to each other.

摘要翻译： 提供了一种用于获得光学系统的波前信息的波前测量方法。 该方法包括：用光束照射光学系统; 允许经由光学系统通过的光束进入具有在第一方向上的周期性的衍射光栅; 并且基于由衍射光栅产生的光束形成的干涉条纹获得波前信息。 衍射光栅包括：允许光通过的第一部分; 以及第二部分，其屏蔽光，每个第二部分设置在两个第一部分之间。 第一方向上的第一部分中的一个的宽度与第一方向上的第二部分之一的宽度在第一方向上变化，第一部分中的一个和第二部分中的一个相邻 对彼此。