公开(公告)号：US20160055288A1

公开(公告)日：2016-02-25

申请号：US14675683

申请日：2015-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jin CHUN ,  Suk-Joo LEE ,  BYOUNG-IL CHOI

IPC: G06F17/50 ,  H01L21/66 ,  H01L21/027

CPC classification number: H01L22/12 ,  G03F7/706 ,  G03F7/70641

Abstract: A method of detecting focus shift in a lithography process, a method of analyzing an error of a transferred pattern using the same, and a method of manufacturing a semiconductor device using the methods are provided. The focus shift detecting method of a lithography process comprises generating a first contour band of a mask pattern between a first focus and a second focus, generating a second contour of the mask pattern between the first focus and a third focus, and determining whether focus shift of the mask pattern occurs using an intersection of the first contour band and the second contour band.

Abstract translation: 提供了一种在光刻工艺中检测焦点偏移的方法，使用该方法分析转印图案的误差的方法，以及使用该方法制造半导体器件的方法。 光刻处理的聚焦偏移检测方法包括在第一焦点和第二焦点之间产生掩模图案的第一轮廓带，在第一焦点和第三焦点之间产生掩模图案的第二轮廓，并且确定是否聚焦移位 使用第一轮廓带和第二轮廓带的交点发生掩模图案。