公开(公告)号：US20160085155A1

公开(公告)日：2016-03-24

申请号：US14705736

申请日：2015-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BYUNG-JE JUNG ,  YONG-JIN CHUN ,  BYOUNG-IL CHOI

IPC: G03F7/20 ,  G01J1/42 ,  G01B11/24

CPC classification number: G03F7/70558 ,  G01B11/24 ,  G03F7/70625 ,  G03F7/70641

Abstract: A lithography metrology method is provided. Focus sensitivity data and dose sensitivity data of sample patterns to be formed on a substrate are acquired. At least one focus pattern selected in descending order of focus sensitivity from among the acquired focus sensitivity data of the sample patterns is determined. At least one low-sensitivity focus pattern in ascending order of the focus sensitivity from among the acquired dose sensitivity data of the sample patterns is selected, and at least one dose pattern selected in descending order of dose sensitivity from among the at least one low-sensitivity focus pattern is determined. A split substrate having a plurality of chip regions is prepared. A plurality of focus split patterns having a shape corresponding to the at least one focus pattern and a plurality of dose split patterns having a shape corresponding to the at least one dose pattern in the plurality of chip regions are formed. A best focus and a best dose from the plurality of focus split patterns and the plurality of dose split patterns are determined.

Abstract translation: 提供光刻计量方法。 获取要在基板上形成的样品图案的聚焦灵敏度数据和剂量敏感度数据。 确定从获取的样本图案的聚焦灵敏度数据中以聚焦灵敏度的降序选择的至少一个聚焦图案。 选择来自所获取的样本图案的剂量敏感度数据中的聚焦灵敏度的升序中的至少一个低灵敏度聚焦图案，并且从至少一个低分辨率图像中选择剂量灵敏度的降序的至少一个剂量图案， 灵敏度聚焦图案被确定。 准备具有多个芯片区域的分离基板。 形成具有与至少一个聚焦图案对应的形状的多个聚焦分割图案和具有与多个切片区域中的至少一个剂量图案对应的形状的多个剂量分割图案。 确定来自多个聚焦分割图案和多个剂量分割图案的最佳聚焦和最佳剂量。

公开(公告)号：US20160055288A1

公开(公告)日：2016-02-25

申请号：US14675683

申请日：2015-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jin CHUN ,  Suk-Joo LEE ,  BYOUNG-IL CHOI

IPC: G06F17/50 ,  H01L21/66 ,  H01L21/027

CPC classification number: H01L22/12 ,  G03F7/706 ,  G03F7/70641

Abstract: A method of detecting focus shift in a lithography process, a method of analyzing an error of a transferred pattern using the same, and a method of manufacturing a semiconductor device using the methods are provided. The focus shift detecting method of a lithography process comprises generating a first contour band of a mask pattern between a first focus and a second focus, generating a second contour of the mask pattern between the first focus and a third focus, and determining whether focus shift of the mask pattern occurs using an intersection of the first contour band and the second contour band.

Abstract translation: 提供了一种在光刻工艺中检测焦点偏移的方法，使用该方法分析转印图案的误差的方法，以及使用该方法制造半导体器件的方法。 光刻处理的聚焦偏移检测方法包括在第一焦点和第二焦点之间产生掩模图案的第一轮廓带，在第一焦点和第三焦点之间产生掩模图案的第二轮廓，并且确定是否聚焦移位 使用第一轮廓带和第二轮廓带的交点发生掩模图案。