公开(公告)号：US10468409B2

公开(公告)日：2019-11-05

申请号：US15920967

申请日：2018-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ping Lee ,  Jian-Shiou Huang ,  Chih-Tang Peng ,  Sung-En Lin

IPC: H01L27/088 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/108

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure protruding from a semiconductor substrate. The fin structure includes a first portion and an overlying second portion. The first portion is formed of a material that is the same as that of the semiconductor substrate and different from that of the second portion. The semiconductor device structure also includes a liner structure and an isolation feature. The liner structure includes a carbon-doped silicon oxide film covering the semiconductor substrate and the first portion of the first fin structure and a nitrogen-containing film over the carbon-doped silicon oxide film. The isolation feature is over the nitrogen-containing film and surrounded by the liner structure.

公开(公告)号：US10361113B2

公开(公告)日：2019-07-23

申请号：US15876583

申请日：2018-01-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Shiou Huang ,  Bang-Tai Tang ,  Chih-Tang Peng ,  Tai-Chun Huang ,  Yen-Chun Huang

IPC: H01L21/469 ,  H01L21/762 ,  H01L21/02 ,  H01L21/8234

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device having an enhanced gap fill layer in trenches. The present disclosure provides a novel gap fill layer formed using a multi-step deposition and in-situ treatment process. The deposition process can be a flowable chemical vapor deposition (FCVD) utilizing one or more assist gases and molecules of low reactive sticking coefficient (RSC). The treatment process can be an in-situ process after the deposition process and includes exposing the deposited gap fill layer to plasma activated assist gas. The assist gas can be formed of ammonia. The low RSC molecule can be formed of trisilylamin (TSA) or perhydropolysilazane (PHPS).

公开(公告)号：US10325994B2

公开(公告)日：2019-06-18

申请号：US15959900

申请日：2018-04-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Tang Peng ,  Tai-Chun Huang ,  Teng-Chun Tsai ,  Cheng-Tung Lin ,  De-Fang Chen ,  Li-Ting Wang ,  Chien-Hsun Wang ,  Huan-Just Lin ,  Yung-Cheng Lu ,  Tze-Liang Lee

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L21/02 ,  H01L23/00 ,  H01L29/78 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/775 ,  H01L29/06 ,  H01L23/29 ,  H01L23/31 ,  H01L27/088

Abstract: According to an exemplary embodiment, a method of forming a vertical structure with at least two barrier layers is provided. The method includes the following operations: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure.

公开(公告)号：US09941394B2

公开(公告)日：2018-04-10

申请号：US14460214

申请日：2014-08-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Teng-Chun Tsai ,  Cheng-Tung Lin ,  Li-Ting Wang ,  Chih-Tang Peng ,  De-Fang Chen ,  Hung-Ta Lin ,  Chien-Hsun Wang

IPC: H01L29/06 ,  H01L29/739 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/088 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08 ,  H01L21/265 ,  H01L29/51 ,  B82Y10/00 ,  H01L29/423 ,  H01L29/775 ,  H01L29/16

CPC classification number: H01L29/7391 ,  B82Y10/00 ,  H01L21/265 ,  H01L21/823462 ,  H01L21/823468 ,  H01L21/823487 ,  H01L21/823493 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/0847 ,  H01L29/1041 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/42376 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/66356 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/665 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/66977 ,  H01L29/775 ,  H01L29/7827

Abstract: The tunnel field-effect transistor includes a drain layer, a source layer, a channel layer, a metal gate layer, and a high-k dielectric layer. The drain and source layers are of opposite conductive types. The channel layer is disposed between the drain layer and the source layer. At least one of the drain layer, the channel layer, and the source layer has a substantially constant doping concentration. The metal gate layer is disposed around the channel layer. The high-k dielectric layer is disposed between the metal gate layer and the channel layer.