公开(公告)号：US07764355B2

公开(公告)日：2010-07-27

申请号：US11779571

申请日：2007-07-18

Applicant: Tadahiro Ohmi ,  Yusuke Muraoka ,  Yasuyoshi Miyaji ,  Yasushi Nagashima

Inventor： Tadahiro Ohmi ,  Yusuke Muraoka ,  Yasuyoshi Miyaji ,  Yasushi Nagashima

IPC: G03B27/52 ,  G03B27/58 ,  G03B27/62

CPC classification number: H01L21/6875 ,  C25D11/04 ,  C25D11/16 ,  H01L21/67103 ,  H01L21/68757 ,  H01L21/68778

Abstract: A stage body has a holding surface for placing a substrate thereon. A predetermined embossed configuration is formed by embossing on the holding surface, and thereafter an alumina film in an amorphous state is formed by an anodic oxidation process on the holding surface. The alumina film having an amorphous structure is dense and strong to provide high wear resistance and to substantially prevent separation electrification. This provides a substrate stage having high wear resistance and capable of preventing separation electrification.

Abstract translation: 台体具有用于在其上放置基板的保持表面。 通过在保持表面上压花来形成预定的压花构造，然后通过阳极氧化工艺在保持表面上形成非晶状态的氧化铝膜。 具有非晶结构的氧化铝膜是致密且坚固的以提供高耐磨性并且基本上防止分离带电。 这提供了具有高耐磨性并且能够防止分离带电的基底台。

公开(公告)号：US20100183827A1

公开(公告)日：2010-07-22

申请号：US12663764

申请日：2008-06-11

Applicant: Masaki Hirayama ,  Tadahiro Ohmi ,  Takahiro Horiguchi

Inventor： Masaki Hirayama ,  Tadahiro Ohmi ,  Takahiro Horiguchi

IPC: H05H1/46 ,  C23C16/511

CPC classification number: C23C16/511 ,  B05C13/00 ,  H01J37/32192 ,  H01J37/32266 ,  H05H1/46

Abstract: A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.

Abstract translation: 提供能够减少电介质部件的使用量的等离子体处理装置。 等离子体处理装置1包括金属处理室4，其配置为在其中容纳待等离子体处理的基板G; 提供在处理室4中激发等离子体所需的电磁波的电磁波源34; 设置在处理室4的盖3的底面上的一个或多个电介质构件25，用于将从电磁波源34提供的电磁波传送到处理室4的内部，每个电介质构件25的一部分 暴露于处理室4的内部; 以及表面波传播部分51，其安装在电介质部件25附近，并被构造成沿着暴露于处理室4的内部的金属表面传播电磁波。

公开(公告)号：US20100139775A1

公开(公告)日：2010-06-10

申请号：US11913277

申请日：2006-06-22

Applicant: Tadahiro Ohmi ,  Masahito Saito ,  Shoichi Hino ,  Tsuyoshi Shimazu ,  Kazuyuki Miura ,  Kouji Nishino ,  Masaaki Nagase ,  Katsuyuki Sugita ,  Kaoru Hirata ,  Ryousuke Dohi ,  Takashi Hirose ,  Tsutomu Shinohara ,  Nobukazu Ikeda ,  Tomokazu Imai ,  Toshihide Yoshida ,  Hisashi Tanaka

Inventor： Tadahiro Ohmi ,  Masahito Saito ,  Shoichi Hino ,  Tsuyoshi Shimazu ,  Kazuyuki Miura ,  Kouji Nishino ,  Masaaki Nagase ,  Katsuyuki Sugita ,  Kaoru Hirata ,  Ryousuke Dohi ,  Takashi Hirose ,  Tsutomu Shinohara ,  Nobukazu Ikeda ,  Tomokazu Imai ,  Toshihide Yoshida ,  Hisashi Tanaka

IPC: F15D1/00

CPC classification number: G05D7/0641 ,  G01F1/363 ,  G01F1/6842 ,  G01F1/6847 ,  G01F5/005 ,  G01F7/005 ,  G05D7/0635 ,  G05D7/0647 ,  G05D23/1927 ,  Y10T137/0379 ,  Y10T137/7759 ,  Y10T137/776 ,  Y10T137/8593 ,  Y10T137/86734 ,  Y10T137/86815 ,  Y10T137/87265 ,  Y10T137/87314 ,  Y10T137/8741 ,  Y10T137/87499 ,  Y10T137/87684

Abstract: A pressure type flow control device enabling a reduction in size and an installation cost by accurately controlling the flow of a fluid in a wide flow range. Specifically, the flow of the fluid flowing in an orifice (8) is calculated as Qc=KP1 (K is a proportionality factor) or Qc=KP2m(P1−P2)n (K is a proportionality factor and m and n are constants) by using a pressure P1 on the upstream side of the orifice and a pressure P2 on the downstream side of the orifice. A fluid passage between the downstream side of the control valve of the flow control device and a fluid feed pipe is formed of at least two or more fluid passages positioned parallel with each other. Orifices with different fluid flow characteristics are interposed in the fluid passages positioned parallel with each other. For the control of the fluid in a small flow area, the fluid in the small flow area is allowed to flow to one orifice. For the control of the flow in the large flow area, the fluid in the large flow area is allowed to flow to the other orifice by switching the fluid passages.

Abstract translation: 一种压力式流量控制装置，通过精确地控制在大流量范围内的流体的流动，能够减小尺寸和安装成本。 具体地说，在孔（8）中流动的流体的流量被计算为Qc = KP1（K是比例因子）或Qc = KP2m（P1-P2）n（K是比例因子，m和n是常数） 通过使用孔口上游侧的压力P1和孔口下游侧的压力P2。 在流量控制装置的控制阀的下游侧和流体供给管之间的流体通道由彼此平行定位的至少两个或更多个流体通道形成。 具有不同流体流动特性的孔口插入彼此平行定位的流体通道中。 为了控制小流量区域中的流体，允许小流量区域中的流体流到一个孔口。 为了控制大流量区域中的流动，通过切换流体通道允许大流量区域中的流体流向另一个孔口。

公开(公告)号：US20100139762A1

公开(公告)日：2010-06-10

申请号：US12601684

申请日：2008-05-02

Applicant: Tadahiro Ohmi ,  Hirokazu Asahara ,  Atsutoshi Inokuchi ,  Kohei Watanuki

Inventor： Tadahiro Ohmi ,  Hirokazu Asahara ,  Atsutoshi Inokuchi ,  Kohei Watanuki

IPC: H01L31/04 ,  C23C16/513 ,  B32B9/04 ,  C30B25/02

CPC classification number: C23C16/511 ,  C23C16/18 ,  C23C16/45565 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L29/7869 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/184 ,  H01L31/1884 ,  H01L31/206 ,  H01L33/0066 ,  H01L33/0087 ,  H01L33/02 ,  H01L2924/0002 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

Abstract: An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.

Abstract translation: 将有机金属材料气体供给到由微波激发的低电子温度和高密度等离子体中，以形成作为成膜体的基板上的化合物的薄膜。 在这种情况下，通过利用有机金属材料气体的蒸汽压力和温度之间的关系来控制有机金属材料气体的供给系统的温度。

公开(公告)号：US20100126848A1

公开(公告)日：2010-05-27

申请号：US12089331

申请日：2006-10-06

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3455

Abstract: A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.

Abstract translation: 提供一种磁控溅射装置，通过增加目标上的瞬时侵蚀密度可以提高成膜速度，通过随时间移动侵蚀区域可以延长目标寿命，以防止目标局部磨损，并实现均匀的磨损。 多个板状磁铁安装在柱状旋转轴的周围，柱状旋转轴旋转，从而在靶上形成高密度的侵蚀区域，以增加成膜速度，并且随着柱状体的旋转而使侵蚀区域移动 旋转轴，从而均匀地佩戴目标。

公开(公告)号：US20100101834A1

公开(公告)日：2010-04-29

申请号：US12528667

申请日：2008-02-22

Applicant: Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura ,  Masahiro Nakamura

Inventor： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura ,  Masahiro Nakamura

IPC: H01B3/22 ,  H01B3/24 ,  B32B37/00

CPC classification number: H01L21/3127 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T156/10 ,  H01L2924/00

Abstract: An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.

Abstract translation: 层间绝缘膜可以通过层叠含有Si原子的烃层和含有N原子的碳氟化合物层而制造，其中烃层含有H原子和C原子，其比例为 的C原子数与H原子数（H / C）成为0.8〜1.2。 层间绝缘膜使得可以抑制由热退火引起的漏电流的产生和膜收缩，并且具有低介电常数并且是稳定的。

公开(公告)号：US20100059368A1

公开(公告)日：2010-03-11

申请号：US12594676

申请日：2008-04-04

Applicant: Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3405 ,  H01J37/3455

Abstract: Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

Abstract translation: 提供了一种磁控溅射装置，其增加靶上的瞬时等离子体密度以提高成膜速率。 磁控管溅射装置包括待加工的基板，安装成面向基板的靶材和安装在穿过靶材的基板相对侧的旋转磁体。 在磁控管溅射装置中，在目标表面上形成等离子体回路。 根据旋转磁体的旋转，等离子体回路产生，移动并沿旋转磁体的轴线方向消失。

公开(公告)号：US07673649B2

公开(公告)日：2010-03-09

申请号：US10597303

申请日：2005-01-13

Applicant: Tadahiro Ohmi ,  Yukio Minami ,  Kenji Tubota ,  Tsutomu Shinohara ,  Michio Yamaji ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Koji Kawada ,  Toshio Nariai

Inventor： Tadahiro Ohmi ,  Yukio Minami ,  Kenji Tubota ,  Tsutomu Shinohara ,  Michio Yamaji ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Koji Kawada ,  Toshio Nariai

IPC: B65D81/20

CPC classification number: F16K51/02 ,  Y10T137/6606 ,  Y10T137/7043 ,  Y10T137/7062

Abstract: The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S4, which is hermetically fitted to the lower vacuum jacket S5 and with its lower face made open.

Abstract translation: 本发明提供一种真空绝热阀，其可以在气体供给系统或排气系统中在高温下使用，并且由于其绝热性能优异，也可以制成大小小型的真空绝热阀。 使用包括阀体和致动器的阀的真空隔热阀和容纳阀的真空保温箱，上述真空保温箱S由方形的下部真空夹套S5形成， 圆筒形真空绝热管接收部分J的侧面并且其上表面打开，方形的上部真空夹套S4气密地装配到下部真空套筒S5上并且其下表面打开。

公开(公告)号：US07663734B2

公开(公告)日：2010-02-16

申请号：US10552731

申请日：2004-04-09

Applicant: Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Kimio Yanagida ,  Kiwamu Takehisa

Inventor： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Kimio Yanagida ,  Kiwamu Takehisa

IPC: G03B27/54

CPC classification number: G03F7/70425 ,  G03F7/70291 ,  G03F7/70358 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/70466 ,  G03F7/70866

Abstract: In a pattern writing method for writing a pattern on a substrate by the use of projection patterns output from a mirror device including two-dimensionally arranged micromirrors, exposure is implemented by ON/OFF controlling each micromirror and partly overlapping the projection patterns from the mirror device at least in a one-dimensional direction, thereby accurately controlling the exposure of intermediate amounts of light.

Abstract translation: 在通过使用从包括二维布置的微镜的反射镜装置输出的投影图案在基板上写入图案的图案写入方法中，通过对每个微反射镜进行ON / OFF控制来实现曝光，并且部分地与来自反射镜装置的投影图案重叠 至少在一维方向上，从而精确地控制中等量的光的曝光。

公开(公告)号：US20090277379A1

公开(公告)日：2009-11-12

申请号：US12311396

申请日：2007-09-28

Applicant: Tadahiro Ohmi ,  Ryoichi Ohkura ,  Osamu Nakamura ,  Takaaki Matsuoka

Inventor： Tadahiro Ohmi ,  Ryoichi Ohkura ,  Osamu Nakamura ,  Takaaki Matsuoka

IPC: B05B13/02

CPC classification number: G11B5/84 ,  G03F7/162 ,  G11B7/261 ,  H01L21/6715 ,  H01L21/6838

Abstract: A gas ejected from a sonic nozzle toward the rear surface of a wafer. The flow speed of the gas flowing to the outer circumference side along the rear surface of the wafer is increased between the rear surface of the wafer and a second cup and is kept by Bernoulli's effects. Thus, flapping of wafer is suppressed. Furthermore, a resist solution is prevented from flowing around to the rear surface.

Abstract translation: 从声波喷嘴朝向晶片的后表面喷射的气体。 沿着晶片的后表面流动到外周侧的气体的流速在晶片的后表面和第二杯之间增加，并且保持由伯努利的作用。 因此，抑制了晶片的振荡。 此外，防止抗蚀剂溶液流到背面。