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31.发明授权公开(公告)号：US11557721B2
公开(公告)日：2023-01-17
申请号：US17174680
申请日：2021-02-12
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , Yari Ferrante , Stuart S. P. Parkin , Jaewoo Jeong , Mahesh G. Samant
Abstract: A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1−xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.
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32.发明申请公开(公告)号：US20210175416A1
公开(公告)日：2021-06-10
申请号：US16840179
申请日：2020-04-03
Inventor： Jaewoo Jeong , Mahesh G. Samant , Yari Ferrante , Panagiotis Charilaos Filippou , Chirag Garg , Stuart Stephen Papworth Parkin
Abstract: A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.
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公开(公告)号：US10937953B2
公开(公告)日：2021-03-02
申请号：US16260024
申请日：2019-01-28
Inventor： Jaewoo Jeong , Mahesh G. Samant , Stuart S. P. Parkin , Yari Ferrante
Abstract: A device is disclosed. The device includes a tetragonal Heusler compound of the form Mn3-xCoxGe, wherein 0
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34.发明申请公开(公告)号：US20190305040A1
公开(公告)日：2019-10-03
申请号：US16119785
申请日：2018-08-31
Inventor： Jaewoo Jeong , Mahesh G. Samant , Stuart S.P. Parkin , Yari Ferrante
Abstract: A device and method for providing the device are described. The device includes a substrate, a MnxN layer overlying the substrate, a multi-layered structure that is non-magnetic at room temperature and a first magnetic layer. The MnxN layer has 2≤x≤4.75. The multi-layered structure comprises alternating layers of Co and E, wherein E comprises at least one other element that includes Al. The composition of the multi-layered structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The first magnetic layer includes a Heusler compound. The first magnetic layer is in contact with the multi-layered structure and the first magnetic layer forms part of a magnetic tunnel junction.
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公开(公告)号：US09825217B1
公开(公告)日：2017-11-21
申请号：US15360221
申请日：2016-11-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woojin Kim , Keewon Kim , S. P. Stuart Parkin , Jaewoo Jeong , Mahesh Govind Samant
CPC classification number: H01L43/02 , G11C11/161 , H01F10/3218 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Example embodiments relate to magnetic memory devices and methods for manufacturing the same. The magnetic memory device includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 15 at %.
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Patent Agency Ranking
公开(公告)号：US09761793B1
公开(公告)日：2017-09-12
申请号：US15157717
申请日：2016-05-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woojin Kim , Keewon Kim , Jaewoo Jeong , Stuart S. P. Parkin , Mahesh Govind Samant
CPC classification number: H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: Example embodiments relate to a magnetic memory device that includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 10 at %.
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公开(公告)号：US12094508B1
公开(公告)日：2024-09-17
申请号：US18509818
申请日：2023-11-15
Inventor： See-Hun Yang , Mahesh Govind Samant , Panagiotis Charilaos Filippou , Chirag Garg , Fnu Ikhtiar , Jaewoo Jeong
CPC classification number: G11C11/161 , H01F10/329 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85
Abstract: Methods and apparatuses are provided for MRAM devices utilizing spin transfer torque. A device includes a substrate; an MTJ formed over the substrate, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; and a PSM layer formed over the free layer of the MTJ. The PSM layer, i.e., a chiral material layer, may be formed adject to a free layer (or adjacent to a TBL, which is adjacent to the free layer) of the MTJ, providing an additional source of spin-transfer-torque, and providing MTJ devices that are operable with lower switching current.
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38.发明公开公开(公告)号：US20240306517A1
公开(公告)日：2024-09-12
申请号：US18179646
申请日：2023-03-07
Inventor： Chirag Garg , Panagiotis Charilaos Filippou , See-Hun Yang , Mahesh Samant , Ikhtiar , Jaewoo Jeong
CPC classification number: H10N50/85 , H01L23/5283 , H01L25/16 , H10B61/10 , H10B61/22 , H10B80/00 , H10N50/01 , H10N50/10
Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and a MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure that includes a crystalline structure configured to template the Heusler compound. The first magnetic layer is formed over the templating structure. The templating structure includes a layer of a first binary alloy including platinum-aluminum (PtAl).
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公开(公告)号：US11948621B2
公开(公告)日：2024-04-02
申请号：US17839639
申请日：2022-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaewoo Jeong , Yonghun Kim , Jaemin Choi , Yoochang Sung , Changsik Yoo
IPC: G11C11/4076
CPC classification number: G11C11/4076
Abstract: A memory device includes a first rank having first memory banks and a first quad skew adjustment circuit and a second rank having second memory banks and a second quad skew adjustment circuit, wherein each of the first quad skew adjustment circuit and the second quad skew adjustment circuit is configured to: receive a 4-phase clock through first channels; detect internal quad skew of the 4-phase clock; correct skew of the 4-phase clock according to the detected quad skew; and output mode register information corresponding to the detected quad skew through a second channel.
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40.发明授权公开(公告)号：US11925124B2
公开(公告)日：2024-03-05
申请号：US17217766
申请日：2021-03-30
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Mahesh Samant , Ikhtiar , Dmytro Apalkov
IPC: H10N50/80 , G11C11/16 , H01F10/193 , H01F10/30 , H01F10/32 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85
CPC classification number: H10N50/80 , G11C11/161 , H01F10/1936 , H01F10/30 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85 , H01F10/3254 , H01F10/3268
Abstract: A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.
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