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    Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
    31.
    发明授权
    Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions 有权
    具有插入层的磁结和使用磁结的磁存储器

    公开(公告)号：US09130155B2

    公开(公告)日：2015-09-08

    申请号：US14048329

    申请日：2013-10-08

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Roman Chepulskyy ,  Xueti Tang ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    IPC: H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

    Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.

    Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 磁结的一部分包括至少一个磁性子结构。 磁性亚结构包括至少一个Fe层和至少一个非磁性插入层。 所述至少一个Fe层与所述至少一个非磁性插入层共享至少一个界面。 所述至少一个非磁性插入层中的每一个由W，I，Hf，Bi，Zn，Mo，Ag，Cd，Os和In中的至少一种构成。

    METHOD AND SYSTEM FOR PROVIDING MAGNETIC MEMORIES SWITCHABLE USING SPIN ACCUMULATION AND SELECTABLE USING MAGNETOELECTRIC DEVICES
    32.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MAGNETIC MEMORIES SWITCHABLE USING SPIN ACCUMULATION AND SELECTABLE USING MAGNETOELECTRIC DEVICES 有权
    使用旋转累积和使用磁电装置可选择的提供磁记录的方法和系统

    公开(公告)号：US20150041934A1

    公开(公告)日：2015-02-12

    申请号：US14097492

    申请日：2013-12-05

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    IPC: H01L43/02

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/224 ,  H01L43/08

    Abstract: A magnetic memory is described. In one aspect, the magnetic memory includes magnetic junctions and at least one semi-spin valve (SSV) line adjacent to the magnetic junctions. Each magnetic junction includes a magnetic free layer. The SSV line(s) include a ferromagnetic layer and a nonmagnetic layer between the ferromagnetic layer and the magnetic junctions. The SSV line(s) are configured to exert a spin accumulation induced torque on at least a portion of the magnetic junctions due to an accumulation of spin polarized current carriers from a current that is substantially in-plane. The free layer is configured to be written using at least the spin accumulation induced torque. In another aspect, the magnetic memory includes magnetic memory cells and at least one spin torque (ST) line that is analogous to the SSV line. Each magnetic memory cell includes magnetic junction(s) analogous to those above and magnetoelectric selection device(s).

    Abstract translation: 描述磁存储器。 在一个方面，磁存储器包括磁结和至少一个与磁结相邻的半自旋阀（SSV）线。 每个磁结都包括无磁层。 SSV线包括在铁磁层和磁结之间的铁磁层和非磁性层。 SSV线被配置为由于自旋极化电流载流子从基本上在平面内的电流的积累而在至少一部分磁结上施加自旋累积诱导转矩。 自由层被配置为使用至少自旋累积诱导扭矩来写入。 在另一方面，磁存储器包括磁存储器单元和类似于SSV线的至少一个自旋转矩（ST）线。 每个磁存储单元包括与上述类似的磁结和磁电选择装置。

    METHOD AND SYSTEM FOR ENGINEERING THE SECONDARY BARRIER LAYER IN DUAL MAGNETIC JUNCTIONS
    33.
    发明申请
    METHOD AND SYSTEM FOR ENGINEERING THE SECONDARY BARRIER LAYER IN DUAL MAGNETIC JUNCTIONS 有权

    公开(公告)号：US20190273201A1

    公开(公告)日：2019-09-05

    申请号：US15968471

    申请日：2018-05-01

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Zheng Duan ,  Dmytro Apalkov ,  Vladimir Nikitin

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer having a first thickness, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance, a second thickness less than the first thickness and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.

    Method and system for providing a magnetic junction usable in spin transfer torque applications using a post-pattern anneal
    36.
    发明授权
    Method and system for providing a magnetic junction usable in spin transfer torque applications using a post-pattern anneal 有权

    公开(公告)号：US10164177B2

    公开(公告)日：2018-12-25

    申请号：US15445695

    申请日：2017-02-28

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Sebastian Schafer ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Don Koun Lee

    IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. A first portion of a magnetoresistive stack corresponding to the magnetic junction is provided. Providing this portion of the magnetoresistive stack includes providing at least one layer for a free layer of the magnetic junction. A second portion of the magnetoresistive stack is provided after the step of providing the first portion of the magnetoresistive stack. The magnetoresistive stack is patterned to provide the magnetic junction after the step of providing the second portion of the magnetoresistive stack. An ambient temperature for the magnetoresistive stack and the magnetic junction does not exceed a crystallization temperature of the free layer after the step of providing the free layer through the step of patterning the magnetoresistive stack. The magnetic junction is annealed at an anneal temperature not less than the crystallization temperature after the step of patterning the magnetoresistive stack.

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