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公开(公告)号：US20170003123A1
公开(公告)日：2017-01-05
申请号：US15268217
申请日：2016-09-16
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
CPC classification number: G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
Abstract translation: 提出了评估多个图案化工艺性能的方法和系统。 测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值 。 在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。 在一些实施例中，收集不同于零的单个衍射级。 在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。
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公开(公告)号：US09490182B2
公开(公告)日：2016-11-08
申请号：US14574021
申请日：2014-12-17
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
CPC classification number: G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
Abstract translation: 提出了评估多个图案化工艺性能的方法和系统。 测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值 。 在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。 在一些实施例中，收集不同于零的单个衍射级。 在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。
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公开(公告)号：US20150176985A1
公开(公告)日：2015-06-25
申请号：US14574021
申请日：2014-12-17
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
IPC: G01B11/27
CPC classification number: G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
Abstract translation: 提出了评估多个图案化工艺性能的方法和系统。 测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值 。 在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。 在一些实施例中，收集不同于零的单个衍射级。 在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。
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公开(公告)号：US20140340682A1
公开(公告)日：2014-11-20
申请号：US14277898
申请日：2014-05-15
Applicant: KLA-Tencor Corporation
Inventor： Hidong Kwak , John Lesoine , Malik Sadiq , Lanhua Wei , Shankar Krishnan , Leonid Poslavsky , Mikhail M. Sushchik
CPC classification number: G01N21/211 , G01B2210/56 , G01N21/274 , G01N21/9501 , G01N2021/213
Abstract: Methods and systems for matching measurement spectra across one or more optical metrology systems are presented. The values of one or more system parameters used to determine the spectral response of a specimen to a measurement performed by a target metrology system are optimized. The system parameter values are optimized such that differences between measurement spectra generated by a reference system and the target system are minimized for measurements of the same metrology targets. Methods and systems for matching spectral errors across one or more optical metrology systems are also presented. A trusted metrology system measures the value of at least one specimen parameter to minimize model errors introduced by differing measurement conditions present at the time of measurement by the reference and target metrology systems. Methods and systems for parameter optimization based on low-order response surfaces are presented to reduce the compute time required to refine system calibration parameters.
Abstract translation: 提出了用于匹配一个或多个光学测量系统的测量光谱的方法和系统。 用于确定样本对目标计量系统执行的测量的光谱响应的一个或多个系统参数的值被优化。 对系统参数值进行优化，使得由参考系统生成的测量光谱与目标系统之间的差异最小化，以测量相同的度量目标。 还提出了用于在一个或多个光学测量系统上匹配光谱误差的方法和系统。 可靠的计量系统测量至少一个样本参数的值，以最小化由参考和目标计量系统测量时存在的不同测量条件引入的模型误差。 提出了基于低阶响应面的参数优化方法和系统，以减少改进系统校准参数所需的计算时间。
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公开(公告)号：US20130321810A1
公开(公告)日：2013-12-05
申请号：US13903070
申请日：2013-05-28
Applicant: KLA-Tencor Corporation
Inventor： Haiming Wang , Shankar Krishnan
IPC: G01N21/21
CPC classification number: G01N21/211 , G03F7/70625
Abstract: Methods and systems for small angle CD metrology with a small spot size are introduced to increase measurement sensitivity while maintaining adequate throughput necessary for modern semiconductor manufacture. A small angle CD metrology system includes a small angle spectroscopic ellipsometry (SE) subsystem combined with a small angle spectroscopic reflectometry system, both operated at small angles of incidence. The small angle SE subsystem is configured to operate in a complete Mueller Matrix mode to further improve measurement sensitivity. The small angle CD metrology system includes an objective having all reflective surfaces in the light path. In some embodiments, the all-reflective objective is a Schwartzschild objective having an axicon mirror element to further reduce measurement spot size. In some embodiments, the small angle CD metrology system includes a dynamic aperture subsystem to isolate specific ranges of angles of incidence and azimuth for improved measurement sensitivity.
Abstract translation: 引入了具有小光斑尺寸的小角度CD测量方法和系统，以提高测量灵敏度，同时保持现代半导体制造所需的足够的通量。 小角度CD测量系统包括小角度光谱椭偏仪（SE）子系统和小角度光谱反射测量系统，两者均以小的入射角进行操作。 小角度SE子系统配置为在完整的Mueller矩阵模式下工作，以进一步提高测量灵敏度。 小角度CD测量系统包括在光路中具有所有反射表面的物镜。 在一些实施例中，全反射目标是具有用于进一步减小测量光斑尺寸的旋转镜镜元件的Schwartzschild物镜。 在一些实施例中，小角度CD测量系统包括动态孔径子系统以隔离入射角和方位角的特定范围，以提高测量灵敏度。
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Patent Agency Ranking
公开(公告)号：US11422095B2
公开(公告)日：2022-08-23
申请号：US16286315
申请日：2019-02-26
Applicant: KLA-Tencor Corporation
Inventor： Phillip Atkins , Liequan Lee , Shankar Krishnan , David C. S. Wu , Emily Chiu
IPC: G01N21/956 , G01N21/25 , G01N21/47 , G03F7/20 , G01N21/95
Abstract: A metrology system may receive a model for measuring one or more selected attributes of a target including features distributed in a selected pattern based on regression of spectroscopic scatterometry data from a scatterometry tool for a range of wavelengths. The metrology system may further generate a weighting function for the model to de-emphasize portions of the spectroscopic scatterometry data associated with wavelengths at which light captured by the scatterometry tool when measuring the target is predicted to include undesired diffraction orders. The metrology system may further direct the spectroscopic scatterometry tool to generate scatterometry data of one or more measurement targets including fabricated features distributed in the selected pattern. The metrology system may further measure the selected attributes for the one or more measurement targets based on regression of the scatterometry data of the one or more measurement targets to the model weighted by the weighting function.
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公开(公告)号：US10690602B2
公开(公告)日：2020-06-23
申请号：US15896978
申请日：2018-02-14
Applicant: KLA-Tencor Corporation
Inventor： Noam Sapiens , Shankar Krishnan , David Y. Wang , Alexander Buettner , Kerstin Purrucker , Kevin A. Peterlinz
IPC: G01N21/95 , G01B11/06 , G01J3/42 , G01N21/956 , H01L21/66 , G01J3/02 , G01J3/36 , G01J3/10 , G01J3/28 , G01N21/84 , G01N21/21
Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.
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公开(公告)号：US10605722B2
公开(公告)日：2020-03-31
申请号：US15836160
申请日：2017-12-08
Applicant: KLA-Tencor Corporation
Inventor： Hidong Kwak , John Lesoine , Malik Sadiq , Lanhua Wei , Shankar Krishnan , Leonid Poslavsky , Mikhail M. Sushchik
Abstract: Methods and systems for matching measurement spectra across one or more optical metrology systems are presented. The values of one or more system parameters used to determine the spectral response of a specimen to a measurement performed by a target metrology system are optimized. The system parameter values are optimized such that differences between measurement spectra generated by a reference system and the target system are minimized for measurements of the same metrology targets. Methods and systems for matching spectral errors across one or more optical metrology systems are also presented. A trusted metrology system measures the value of at least one specimen parameter to minimize model errors introduced by differing measurement conditions present at the time of measurement by the reference and target metrology systems. Methods and systems for parameter optimization based on low-order response surfaces are presented to reduce the compute time required to refine system calibration parameters.
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公开(公告)号：US10551166B2
公开(公告)日：2020-02-04
申请号：US16150268
申请日：2018-10-02
Applicant: KLA-Tencor Corporation
Inventor： Carlos L. Ygartua , Shankar Krishnan
IPC: G01B11/06
Abstract: Apparatus and methods for performing optically based film thickness measurements of highly absorbing films (e.g., high-K dielectric films) with improved measurement sensitivity are described herein. A highly absorbing film layer is fabricated on top of a highly reflective film stack. The highly reflective film stack includes one or more nominally identical sets of multiple layers of different, optically contrasting materials. The highly reflective film stack gives rise to optical resonance in particular wavelength ranges. The high reflectance at the interface of the highly absorbing film layer and the highly reflective film stack increases measured light intensity and measurement sensitivity. The thickness and optical dispersion of the different material layers of the highly reflective film stack are selected to induce optical resonance in a desired wavelength range. The desired wavelength range is selected to minimize absorption by the highly absorbing film under measurement.
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公开(公告)号：US10281263B2
公开(公告)日：2019-05-07
申请号：US15204938
申请日：2016-07-07
Applicant: KLA-Tencor Corporation
Inventor： Shankar Krishnan
Abstract: Methods and systems for performing optical measurements of geometric structures filled with an adsorbate by a gaseous adsorption process are presented herein. Measurements are performed while the metrology target under measurement is treated with a flow of purge gas that includes a controlled amount of fill material. A portion of the fill material adsorbs onto the structures under measurement and fills openings in the structural features, spaces between structural features, small volumes such as notches, trenches, slits, contact holes, etc. In one aspect, the desired degree of saturation of vaporized material in the gaseous flow is determined based on the maximum feature size to be filled. In one aspect, measurement data is collected when a structure is unfilled and when the structure is filled by gaseous adsorption. The collected data is combined in a multi-target model based measurement to reduce parameter correlations and improve measurement performance.
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